IEEE Transactions on Components, Packaging and Manufacturing Technology最新文献

{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Society Information","authors":"","doi":"10.1109/TCPMT.2025.3546009","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3546009","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 3","pages":"C3-C3"},"PeriodicalIF":2.3,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10935768","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143667695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Publication Information","authors":"","doi":"10.1109/TCPMT.2025.3546005","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3546005","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 3","pages":"C2-C2"},"PeriodicalIF":2.3,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10935767","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143667538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Signal Integrity Analysis of Tapered Through Packaging Multibit Glass Vias Using Exponential Matrix–Rational Approximation Technique","authors":"Ajay Kumar;Rohit Dhiman","doi":"10.1109/TCPMT.2025.3553362","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3553362","url":null,"abstract":"In this article, we develop a wideband scalable analytical model of tapered through packaging differential multibit vias (TP-DMVs) with pads in glass interposer by developing an exponential matrix-rational approximation (EM-RA) technique. An electrical <italic>RLGC</i> model, which also includes the skin effect, is proposed as a function of geometric parameters of tapered through glass vias. The scalability of <italic>RLGC</i> equivalent circuit is verified in terms of <italic>S</i>-parameters against the 3-D electromagnetic (EM) high-frequency structure simulator (HFSS) up to 100 GHz, for a wide variety of tapered TP-DMV dimensions, including the effects of slope angle and aspect ratio. The maximum reduction in capacitance and conductance values of tapered TP-DMVs with a slope angle is ~75%, while the maximum increase in resistance and inductance value is ~93%. The signal integrity parameters, such as crosstalk, time to reach peak crosstalk, and propagation delay under the influence of surface roughness (SR) and temperature variations, are computed using the EM-RA technique and industry-level simulator SPICE. The variations include temperature and glass SR ranges from (300–500 K) and (150–<inline-formula> <tex-math>$1.5~mu $ </tex-math></inline-formula>m). The comparison shows excellent conformity with less than 1% error. Through the proposed EM-RA technique and Nyquist stability criterion, it is shown that, by increasing the slope angle and pitch, the tapered TP-DMVs become relatively more stable.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 5","pages":"1014-1024"},"PeriodicalIF":2.3,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143927360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A 3-D Phased Array Transmitter With Circuit and Package Codesign of a Phase Shifter and a Power Amplifier at W Band","authors":"Zhe Zhao;Dong-Xin Ni;Wang-Wen Xu;Yin-Shan Huang;Cheng-Rui Zhang;Liang Zhou","doi":"10.1109/TCPMT.2025.3553253","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3553253","url":null,"abstract":"This study proposes the design, fabrication, and testing of a 3-D integrated transmitter operating at the W band. Detailed analyses of the performance variations before and after packaging of the phase shifter (PS) and power amplifier (PA) are provided, along with specific design processes. The circuit and packaging of the PS and PA are codesigned to maintain their performance and minimize proximity effects during 3-D integration at millimeter-wave frequencies. The PS achieves a −6.4-dB loss at 100GHz, with a phase root mean square (rms) error of 1.11° and a gain rms error of 0.855dB. The PA achieves a maximum gain of 19.5dB at 103GHz, with a bandwidth from 99.2 to 106.7GHz and a saturated output power of 13dBm. Both the PS and PA are individually packaged using proprietary silicon-based micro-electro-mechanical system (MEMS) through-silicon-trench technology and multilayer photosensitive composite film. Finally, a 3-D integration of the transmitter system is realized using microbumps based on 3-D transition structures.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 5","pages":"1060-1071"},"PeriodicalIF":2.3,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143929655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Simplified Radiation Model for Amplitude-Only Near-Field Reconstruction of Multiple Sources on Package Interconnects","authors":"Wei-Jen Chen;Wei-Kai Chen;Ming-Chung Huang;Ruey-Beei Wu","doi":"10.1109/TCPMT.2025.3553054","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3553054","url":null,"abstract":"This study proposes a novel modal decomposition method to allow reconstructing principal components of radiation sources in multi-interconnect systems from the amplitude-only near magnetic field measurement. Singular value decomposition (SVD) is used to express any radiation field as a linear combination of modes of multiple coupled interconnects. The same method is used for arbitrary dipole distribution. A suitable noise model is determined using only a few principal modes, rather than a large quantity of dipoles. For amplitude-only field data, the dipole model is solved by determining the coefficients of modes using a pattern search optimization, which is a relatively simple and time-saving algorithm. The proposed method is validated using a numerical example of multi-interconnect radiation. The field that is reconstructed using the proposed model exhibits a high degree of consistency with the actual spatial fields in terms of field amplitude and phase. Thence, the de-sense issues of the multi-interconnect systems can be effectively determined by the superposition of the effects from a few principal modes.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 5","pages":"1044-1051"},"PeriodicalIF":2.3,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143929652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Complex Permittivity Characterization of Low-Loss SlabsUsing Time-Gating Technique","authors":"Bing Xue","doi":"10.1109/TCPMT.2025.3551958","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3551958","url":null,"abstract":"This letter presents an innovative method for assessing the complex dielectric constants of low-loss dielectric slabs at sub-terahertz (THz) frequencies. Differing from conventional free-space techniques, the proposed approach removes the need for precise thickness knowledge of the material under test (MUT) and reference plane calibration. Even when the MUT thickness varies in a single sample, the proposed method effectively reduces the relevant estimate uncertainty. When applying it to estimate the permittivity of thick plexiglass and nylon plates across the 140–210-GHz frequency range, it demonstrates good agreement with published articles and lower uncertainty of the estimates. The proposed method is well-suited for permittivity characterizations at THz frequencies, particularly in scenarios where precise rulers are lacking or MUT thickness varies in a single sample.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 5","pages":"1151-1154"},"PeriodicalIF":2.3,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10929045","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143932259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Machine Learning-Based Diagnosis of Defects in 2.5-D and 3-D Interconnects","authors":"Junming Li;Huaguo Liang;Hao Lv;Yuqi Pan;Zhengfeng Huang;Tian Chen;Yingchun Lu","doi":"10.1109/TCPMT.2025.3550201","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3550201","url":null,"abstract":"Diagnosing interconnect line defects becomes increasingly challenging in advanced chiplet integration due to the immaturity of fabrication processes, reduced interconnect spacing, and increased density. In this article, a nondestructive interconnect defect diagnosis method is proposed. First, redistribution layers (RDLs) on the 2.5-D silicon interposer and 3-D through silicon via-RDL (TSV-RDL) interconnect channels are simulated by ANSYS HFSS, with open and short defects injected at various positions to analyze signal integrity; utilizing <italic>S</i> parameters and group delay time (GDT) as feature vectors, machine learning algorithms are employed specifically for the classification and identification of defects. For defect localization, a novel high-precision scheme driven by adaptive regression and clustering is proposed, achieving highly accurate and reliable localization of defects. The results show that the algorithm can accurately identify open and short defects. In defect localization, the mean relative error (MRE) of the proposed method is less than 8%, and the maximum relative error (MaxRE) does not exceed 13%. Compared with the related algorithms, the localization accuracy is significantly improved, providing a novel perspective for the identification and localization of defects within package interconnect lines.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 5","pages":"1104-1116"},"PeriodicalIF":2.3,"publicationDate":"2025-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143929821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Antenna-Integrated and PA-Embedded Glass Substrates for D-Band InP Power Amplifier Modules","authors":"Xiaofan Jia;Xingchen Li;Joon Woo Kim;Kyoung-Sik Moon;Mark J. W. Rodwell;Madhavan Swaminathan","doi":"10.1109/TCPMT.2025.3549371","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3549371","url":null,"abstract":"This article presents an innovative antenna-in-package (AiP) solution designed for 140-GHz indium phosphide (InP) power amplifier (PA) front-end modules. In this design, InP PAs are strategically embedded at the center of a glass substrate (AGC EN-A1) sandwiched by low-loss dielectric layers (ABF-GL102) on both sides. This arrangement facilitates ultrashort die-to-package interconnects through 20-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m dielectric vias, achieving a remarkably low simulated loss of 0.2–0.3 dB at 140 GHz and an impressive <inline-formula> <tex-math>$S11$ </tex-math></inline-formula>/<inline-formula> <tex-math>$S22$ </tex-math></inline-formula> of less than −15 dB across a wide frequency range from 110 to 170 GHz. We conducted a thorough evaluation of various PA designs with two-stage and three-stage amplifying circuits embedded within this package. The findings reveal that the embedded InP PAs deliver consistent small signal gains of 11.1 dB for the two-stage and 15.8 dB for the three-stage PAs at 140 GHz, comparable with their bare die performance and other existing packaging technologies. A key feature of this design is the integration of a 5-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m-thick copper heat spreader on the PA backside, which significantly enhances thermal management. In addition, the design accommodates the seamless integration of a <inline-formula> <tex-math>$1times 8$ </tex-math></inline-formula> microstrip patch antenna array. Directly connected to the PA output, this array achieves maximum broadside gains of 12.9, 25.3, and 29.7 dB for the standalone antenna, and the PA-antenna modules with two-stage and three-stage PAs at 139 GHz, respectively, over a 3-dB bandwidth of 5 GHz (136–141 GHz). Moreover, the radiation pattern of the PA-antenna module has been meticulously characterized, showcasing a <inline-formula> <tex-math>$13^{circ } ~3$ </tex-math></inline-formula>-dB <italic>E</i>-plane beamwidth and <inline-formula> <tex-math>$64^{circ } ~3$ </tex-math></inline-formula>-dB <italic>H</i>-plane beamwidth from the broadside. With its superior electrical and thermal performance, scalability, and cost-effectiveness, this package presents a promising solution for developing D-band beamforming arrays in next-generation communication systems.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 4","pages":"782-791"},"PeriodicalIF":2.3,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143821669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Publication Information","authors":"","doi":"10.1109/TCPMT.2025.3565091","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3565091","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 5","pages":"C2-C2"},"PeriodicalIF":2.3,"publicationDate":"2025-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10994790","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143929770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Society Information","authors":"","doi":"10.1109/TCPMT.2025.3565095","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3565095","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 5","pages":"C3-C3"},"PeriodicalIF":2.3,"publicationDate":"2025-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10994788","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143932256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}