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2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)最新文献

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Study on Transient Ionizing Radiation Effect of 40nm SRAM 40nm SRAM瞬态电离辐射效应研究
2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2019-05-01 DOI: 10.1109/ICREED49760.2019.9205175
Junlin Li, Wei Chen, Ruibin Li, Guizhen Wang, Shanchao Yang
{"title":"Study on Transient Ionizing Radiation Effect of 40nm SRAM","authors":"Junlin Li, Wei Chen, Ruibin Li, Guizhen Wang, Shanchao Yang","doi":"10.1109/ICREED49760.2019.9205175","DOIUrl":"https://doi.org/10.1109/ICREED49760.2019.9205175","url":null,"abstract":"This paper investigates the core voltage’s reduction of electronics induced by transient ionizing radiation and how it influences TREE (Transient Ionizing Radiation Effect of Electronics) on SRAM. 6T memory cell of 40nm SRAM was constructed in TCAD and the dose-rate upset threshold of it was 1.5×1011Gy(Si)/s when working at nominal core voltage. However, the transient ionizing radiation experiment of 40nm SRAM carried out on “QiangGuang-I” accelerator indicated that the dose-rate upset threshold of the whole SRAM chip was1.0×107 Gy(Si)/s. And the simulation results indicated that the reduction of memory cell’s core voltage would reduce the dose-rate upset threshold significantly as the memory cell’s SNM (Static Noise Margin) decreases with the reduction of memory cell’s core voltage. As there is LDO (Low Dropout Regulator) inside SRAM for conversion of voltage from I/O to core, we also did the transient ionizing radiation experiment of LDO and the experimental results showed that the output voltage of LDO would decrease during transient ionizing radiation which verified the probability of the reduction of memory cell’s core voltage during transient ionizing radiation. Combined with the experiment and simulation results, it can be assumed that the reduction of core voltage during radiation is a main reason causing SRAM upset.","PeriodicalId":124372,"journal":{"name":"2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129658093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
The Time-dependent latch-up defect induced by single-particles in bulk CMOS 块体CMOS中单粒子引起的随时间闭锁缺陷
2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2019-05-01 DOI: 10.1109/ICREED49760.2019.9205171
Yin Wanjun, Liu Yukui, Zhu Yukai, WU Xue
{"title":"The Time-dependent latch-up defect induced by single-particles in bulk CMOS","authors":"Yin Wanjun, Liu Yukui, Zhu Yukai, WU Xue","doi":"10.1109/ICREED49760.2019.9205171","DOIUrl":"https://doi.org/10.1109/ICREED49760.2019.9205171","url":null,"abstract":"The time-dependent latch-up defect induced by single-particles in bulk CMOS is examined. This paper presents that the latch-up defect could be caused by a time-varying negative power supply voltage on Vss terminal from single particles strike, under the precondition of the pulse peak Vss_peak<Vss0 (about −0.8 V). After the transient pulse roll off, the charge Qc stored in a parasitic SCR(PNPN) junction depletion capacitances must be greater than a threshold charge Qc<inf>0</inf> to maintain latch-up stability. The charge Qc depends on a transient pulse width and transit time of parasitic two bipolar transistors. Subsequently, the proposed conclusions were verified by numerical transient simulation experiment.","PeriodicalId":124372,"journal":{"name":"2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"163 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121028780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fiber radiation-induced attenuation sensing design based on geant4 simulation 基于geant4仿真的光纤辐射衰减传感设计
2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2019-05-01 DOI: 10.1109/ICREED49760.2019.9205165
Yang Pengnian, Liang Yuhe, Zhang Jintong
{"title":"Fiber radiation-induced attenuation sensing design based on geant4 simulation","authors":"Yang Pengnian, Liang Yuhe, Zhang Jintong","doi":"10.1109/ICREED49760.2019.9205165","DOIUrl":"https://doi.org/10.1109/ICREED49760.2019.9205165","url":null,"abstract":"Simulate the energy deposition value of the 1.2MeV electron radiation in the fiber after penetrating the shielding window of different materials and thicknesses with geant4, compare the maximum energy deposition value of the fiber, and finally select the copper with the thickness of 1mm, 2mm, 3mm as the shielding. The fiber radiation-induced attenuation curve is obtained experimentally, and the f radiation-induced attenuation model is established to provide a theoretical basis for fiber radiation sensing.","PeriodicalId":124372,"journal":{"name":"2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123886299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study on Radiation Degeneration Mechanism and Test for CTR of Optocoupler 光耦辐射退化机理及CTR测试研究
2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2019-05-01 DOI: 10.1109/ICREED49760.2019.9205169
Li Xiaoliang, Xue Pengchao, L. Yanqiu, Mei Bo, Z. Hongwei, Luo Lei
{"title":"Study on Radiation Degeneration Mechanism and Test for CTR of Optocoupler","authors":"Li Xiaoliang, Xue Pengchao, L. Yanqiu, Mei Bo, Z. Hongwei, Luo Lei","doi":"10.1109/ICREED49760.2019.9205169","DOIUrl":"https://doi.org/10.1109/ICREED49760.2019.9205169","url":null,"abstract":"CTR of optocoupler radiation degeneration mechanism is analyzed. The TID test is carried out for three batches devices under different bias states. It shows CTR declines with total dose increasing, and the trends agree with calculation curve. Radiation degeneration is worse under the short connection state. The analysis result of different batches device shows it has difference from each other.","PeriodicalId":124372,"journal":{"name":"2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128074122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compton Scattering Pinhole Imaging Technology for Measuring and Diagnosing Dose Field Intensity Distribution of Intense Pulse Gamma Ray Beams 康普顿散射针孔成像技术用于测量和诊断强脉冲伽马射线束的剂量场强度分布
2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2019-05-01 DOI: 10.1109/ICREED49760.2019.9205167
Zheng Xiaohai, Hu Huasi, Sun Jianfeng, Liao Zhongliang, Cai Dan, W. Jinhua
{"title":"Compton Scattering Pinhole Imaging Technology for Measuring and Diagnosing Dose Field Intensity Distribution of Intense Pulse Gamma Ray Beams","authors":"Zheng Xiaohai, Hu Huasi, Sun Jianfeng, Liao Zhongliang, Cai Dan, W. Jinhua","doi":"10.1109/ICREED49760.2019.9205167","DOIUrl":"https://doi.org/10.1109/ICREED49760.2019.9205167","url":null,"abstract":"In the intense pulsed gamma radiation environment (dose rate>1GGy (SI)/s, FWHM10-20ns), the damage of electronic devices and systems exhibits a strong dose rate effect. The dose field distribution of the intense pulse gamma-ray beam generated by the “Qiang guang 1” accelerator is an urgent problem to be solved. It is the premise of carrying out the experiment of high dose rate effect to obtain the distribution information of strong dose field accurately and quickly. In this paper, we present a method for the problem based on the Compton scattering method: placing a target near the exit and using a pinhole imaging system, the scattered gamma intensity distribution at the thin target is reconstructed, and then the intensity distribution of the dose field of the strong pulsed gamma ray beam at the thin target is given.","PeriodicalId":124372,"journal":{"name":"2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131792771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigating Neutron-Induced Single Event Transient Characteristics by TCAD Simulations in 65 nm Technology and Below 用TCAD模拟研究65纳米及以下工艺中中子诱导的单事件瞬态特性
2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2019-05-01 DOI: 10.1109/ICREED49760.2019.9205173
C. Peng, Z. Lei, Zhangang Zhang, Y. En, Yun Huang
{"title":"Investigating Neutron-Induced Single Event Transient Characteristics by TCAD Simulations in 65 nm Technology and Below","authors":"C. Peng, Z. Lei, Zhangang Zhang, Y. En, Yun Huang","doi":"10.1109/ICREED49760.2019.9205173","DOIUrl":"https://doi.org/10.1109/ICREED49760.2019.9205173","url":null,"abstract":"The neutron-induced secondary ions can cause single event effects through direct ionization, while the LET values of the secondary ions are quite lower than heavy ions in space. Monte Carlo simulation results show that although the maximum LET of secondary ions produced by different energy neutrons incident into the circuit can reach 25.6 MeV-cm2/mg, 98% of the secondary ions have LET values below 16 MeV-cm2/mg. This may lead to different charge collection mechanisms and single event transient (SET) characteristics for neutron. In this paper, the charge collection mechanisms of neutron secondary ions in a single 65 nm planar bulk transistor are studied through 3D TCAD simulations. The neutron-induced SET characteristics in planar bulk transistor, UTBB FDSOI and bulk/SOI FinFET are also compared. Based on the simulation results, UTBB FDSOI shows the best single event effect immunity compared with planar bulk transistor, bulk FinFET and SOI FinFET under the same technology node.","PeriodicalId":124372,"journal":{"name":"2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125621439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Proton Radiation Induced Dark Current Degradation in CMOS Image Sensor 质子辐射诱导CMOS图像传感器暗电流退化
2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2019-05-01 DOI: 10.1109/ICREED49760.2019.9205172
Chao Liu, R. Zheng, Xiaomin Wei, Jia Wang, Yann Hu
{"title":"Proton Radiation Induced Dark Current Degradation in CMOS Image Sensor","authors":"Chao Liu, R. Zheng, Xiaomin Wei, Jia Wang, Yann Hu","doi":"10.1109/ICREED49760.2019.9205172","DOIUrl":"https://doi.org/10.1109/ICREED49760.2019.9205172","url":null,"abstract":"The proton radiation experiment was carried out for the dark current noise of CMOS image sensor, and the influence of proton energy, fluence, fluence rate and applied bias voltage during irradiation on the mean value and non-uniformity of dark current noise were investigated. The annealing test results at room temperature were also presented.","PeriodicalId":124372,"journal":{"name":"2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"127 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132500548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Feasibility Analysis of Establishing a Physical Model of Radiation Effects from SiC to device 建立SiC对器件辐射效应物理模型的可行性分析
2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2019-05-01 DOI: 10.1109/ICREED49760.2019.9205162
Xiuyu Zhang, Yifan Zhang, Yuan Gao, J. Xue
{"title":"Feasibility Analysis of Establishing a Physical Model of Radiation Effects from SiC to device","authors":"Xiuyu Zhang, Yifan Zhang, Yuan Gao, J. Xue","doi":"10.1109/ICREED49760.2019.9205162","DOIUrl":"https://doi.org/10.1109/ICREED49760.2019.9205162","url":null,"abstract":"Based on the paradigm of MOSFET in COMSOL, the parameters of 6H-SiC and mobility models were customized. The effects of different mobility models on the stationary characteristics of the 6H-SiC MOSFET were compared. The results show that it is possible to establish a physical model to evaluate the irradiation effects on the SiC and SiC devices.","PeriodicalId":124372,"journal":{"name":"2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115783552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evaluation of SEU Sensitivity in Hardened FPGA on Layout-based Sensitive Volume Method 基于布局敏感体积法的硬化FPGA中SEU灵敏度评估
2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2019-05-01 DOI: 10.1109/ICREED49760.2019.9205163
C. Cai, Luchang Ding, Gengsheng Chen, Tianqi Liu, Dongqing Li, P. Zhao, Ze He, B. Ye, Jie Liu
{"title":"Evaluation of SEU Sensitivity in Hardened FPGA on Layout-based Sensitive Volume Method","authors":"C. Cai, Luchang Ding, Gengsheng Chen, Tianqi Liu, Dongqing Li, P. Zhao, Ze He, B. Ye, Jie Liu","doi":"10.1109/ICREED49760.2019.9205163","DOIUrl":"https://doi.org/10.1109/ICREED49760.2019.9205163","url":null,"abstract":"DICE hardened configuration logics in million-gate FPGA were investigated. The rectangular parallelepiped models were established based on the material details and the layout of FPGA. Multiple sensitive volumes and charge collection weights were ascertained. The simulations were matched and further explained our heavy ion experiments.","PeriodicalId":124372,"journal":{"name":"2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122714796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Laser Simulation of Transient Ionizing Radiation Effects in the 0.18μm CMOS Inverter Chain 0.18μm CMOS逆变链中瞬态电离辐射效应的激光模拟
2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2019-05-01 DOI: 10.1109/ICREED49760.2019.9205174
Weiyi Cao, Liang Wang, Tongde Li, Cheng-Long Sui, Chunqing Yu, Ruilong Han, Yuanfu Zhao
{"title":"Laser Simulation of Transient Ionizing Radiation Effects in the 0.18μm CMOS Inverter Chain","authors":"Weiyi Cao, Liang Wang, Tongde Li, Cheng-Long Sui, Chunqing Yu, Ruilong Han, Yuanfu Zhao","doi":"10.1109/ICREED49760.2019.9205174","DOIUrl":"https://doi.org/10.1109/ICREED49760.2019.9205174","url":null,"abstract":"In this paper, pulsed laser is used to simulate the transient ionizing radiation effects in a 0.18μm CMOS inverter chain. The results of experiment and TCAD simulation show the voltage and current perturbations at output 0 are always greater than that at output 1 within a certain dose rate range. The comprehensive analyses demonstrate the parasitic bipolar effect in PMOS is more serious than that in NMOS under transient ionizing radiation, which means photocurrent especially secondary photocurrent is the essential cause why voltage disturbance at output 0 is greater than that at output 1.","PeriodicalId":124372,"journal":{"name":"2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129904005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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