康普顿散射针孔成像技术用于测量和诊断强脉冲伽马射线束的剂量场强度分布

2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2019-05-01 DOI:10.1109/ICREED49760.2019.9205167

Zheng Xiaohai, Hu Huasi, Sun Jianfeng, Liao Zhongliang, Cai Dan, W. Jinhua

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引用次数: 0

摘要

在强脉冲伽马辐射环境下(剂量率bbb10 1gy (SI)/s, FWHM10-20ns)，电子器件和系统的损伤表现出很强的剂量率效应。强光一号加速器产生的强脉冲伽玛射线束的剂量场分布是一个亟待解决的问题。准确、快速地获取强剂量场分布信息是开展高剂量率效应实验的前提。本文提出了一种基于康普顿散射法的方法:在出口附近放置目标，利用针孔成像系统，重建薄目标处的散射伽马强度分布，然后给出强脉冲伽马射线束在薄目标处的剂量场强度分布。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Compton Scattering Pinhole Imaging Technology for Measuring and Diagnosing Dose Field Intensity Distribution of Intense Pulse Gamma Ray Beams

In the intense pulsed gamma radiation environment (dose rate>1GGy (SI)/s, FWHM10-20ns), the damage of electronic devices and systems exhibits a strong dose rate effect. The dose field distribution of the intense pulse gamma-ray beam generated by the “Qiang guang 1” accelerator is an urgent problem to be solved. It is the premise of carrying out the experiment of high dose rate effect to obtain the distribution information of strong dose field accurately and quickly. In this paper, we present a method for the problem based on the Compton scattering method: placing a target near the exit and using a pinhole imaging system, the scattered gamma intensity distribution at the thin target is reconstructed, and then the intensity distribution of the dose field of the strong pulsed gamma ray beam at the thin target is given.

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2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)

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