Feasibility Analysis of Establishing a Physical Model of Radiation Effects from SiC to device

Abstract

Based on the paradigm of MOSFET in COMSOL, the parameters of 6H-SiC and mobility models were customized. The effects of different mobility models on the stationary characteristics of the 6H-SiC MOSFET were compared. The results show that it is possible to establish a physical model to evaluate the irradiation effects on the SiC and SiC devices.