0.18μm CMOS逆变链中瞬态电离辐射效应的激光模拟

2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2019-05-01 DOI:10.1109/ICREED49760.2019.9205174

Weiyi Cao, Liang Wang, Tongde Li, Cheng-Long Sui, Chunqing Yu, Ruilong Han, Yuanfu Zhao

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引用次数: 0

摘要

本文利用脉冲激光模拟了0.18μm CMOS逆变链中的瞬态电离辐射效应。实验和TCAD仿真结果表明，在一定剂量率范围内，输出0处的电压和电流扰动总是大于输出1处的电压和电流扰动。综合分析表明，瞬态电离辐射下PMOS的寄生双极效应比NMOS更严重，这意味着光电流特别是二次光电流是输出0处电压扰动大于输出1处电压扰动的根本原因。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Laser Simulation of Transient Ionizing Radiation Effects in the 0.18μm CMOS Inverter Chain

In this paper, pulsed laser is used to simulate the transient ionizing radiation effects in a 0.18μm CMOS inverter chain. The results of experiment and TCAD simulation show the voltage and current perturbations at output 0 are always greater than that at output 1 within a certain dose rate range. The comprehensive analyses demonstrate the parasitic bipolar effect in PMOS is more serious than that in NMOS under transient ionizing radiation, which means photocurrent especially secondary photocurrent is the essential cause why voltage disturbance at output 0 is greater than that at output 1.

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2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)

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