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2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)最新文献

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Electrical Characteristics of 400V Ultra-Thin SOI NLDMOS after Total Dose Irradiation 400V超薄SOI NLDMOS全剂量辐照后的电学特性
2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2019-05-01 DOI: 10.1109/ICREED49760.2019.9205166
Lei Shu, Yuanfu Zhao, Liang Wang, Tianqi Wang, Xin Zhou, Zhangyi’an Yuan, Kai Zhao, Mingxue Huo, Chaoming Liu, Guo-Liang Ma, Yanqing Zhang, Chunhua Qi, M. Qiao, Wei-Ping Chen
{"title":"Electrical Characteristics of 400V Ultra-Thin SOI NLDMOS after Total Dose Irradiation","authors":"Lei Shu, Yuanfu Zhao, Liang Wang, Tianqi Wang, Xin Zhou, Zhangyi’an Yuan, Kai Zhao, Mingxue Huo, Chaoming Liu, Guo-Liang Ma, Yanqing Zhang, Chunhua Qi, M. Qiao, Wei-Ping Chen","doi":"10.1109/ICREED49760.2019.9205166","DOIUrl":"https://doi.org/10.1109/ICREED49760.2019.9205166","url":null,"abstract":"The electrical characteristics variations of 400V SOI NLDMOS after exposure to total dose irradiation are discovered. The mechanisms of these variations are analyzed and confirmed by TCAD simulations.","PeriodicalId":124372,"journal":{"name":"2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"39 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132870403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Total Dose Radiation Response of Substrate Hot Carrier for Uniaxial Strained Si Nano-Scale NMOSFET 单轴应变Si纳米级NMOSFET衬底热载子的总剂量辐射响应
2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2019-05-01 DOI: 10.1109/ICREED49760.2019.9205168
Minru Hao, Chen-Guang Liao, Hai-wei Fu, Guo‐Xiang Chen
{"title":"Total Dose Radiation Response of Substrate Hot Carrier for Uniaxial Strained Si Nano-Scale NMOSFET","authors":"Minru Hao, Chen-Guang Liao, Hai-wei Fu, Guo‐Xiang Chen","doi":"10.1109/ICREED49760.2019.9205168","DOIUrl":"https://doi.org/10.1109/ICREED49760.2019.9205168","url":null,"abstract":"An analytical model of substrate hot carrier of the uniaxial strained Si Nano-scale NMOSFET has been developed due to total dose irradiation effect. The influence of total dose, geometry parameter on hot carrier substrate current was simulated by Sentaurus-TCAD. Thus, the proposed model provides good reference for research on irradiation reliability and application of strained integrated circuit of uniaxial strained Si Nano-scale NMOSFET.","PeriodicalId":124372,"journal":{"name":"2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128532791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling and Analysis of Total-Ionization-Dose Induced Spatial Equivalent Noise Charge of a 180-nm 4T CMOS Active Pixel Sensor 180nm 4T CMOS有源像素传感器总电离剂量诱导空间等效噪声电荷的建模与分析
2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2019-05-01 DOI: 10.1109/ICREED49760.2019.9205164
Y. Tang, M. Wu, Y. Liu, W. Gao
{"title":"Modeling and Analysis of Total-Ionization-Dose Induced Spatial Equivalent Noise Charge of a 180-nm 4T CMOS Active Pixel Sensor","authors":"Y. Tang, M. Wu, Y. Liu, W. Gao","doi":"10.1109/ICREED49760.2019.9205164","DOIUrl":"https://doi.org/10.1109/ICREED49760.2019.9205164","url":null,"abstract":"The modeling of total-ionization-dose (TID)-induced spatial equivalent noise charge (ENC) of a CMOS APS is firstly given. A γ-ray irradiation experiment using 60Co source is then performed to verify the models. The maximum error is less than 10% when the total dose is less than 60 krad (Si).","PeriodicalId":124372,"journal":{"name":"2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"219 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131582817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Radiation-hardened Bus Controller Chip for ARINC 659 一种用于arinc659的抗辐射总线控制器芯片
2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2019-05-01 DOI: 10.1109/ICREED49760.2019.9205170
Shuang Jiang, Shibin Liu, Chenguang Guo, Teng Ma, A. Paccagnella, Jialan Xie
{"title":"A Radiation-hardened Bus Controller Chip for ARINC 659","authors":"Shuang Jiang, Shibin Liu, Chenguang Guo, Teng Ma, A. Paccagnella, Jialan Xie","doi":"10.1109/ICREED49760.2019.9205170","DOIUrl":"https://doi.org/10.1109/ICREED49760.2019.9205170","url":null,"abstract":"In this paper, a radiation-hardened bus controller chip for ARINC 659 is designed. To meet the needs of space radiation environment, most modules that may be affected by high-energy particles have been precisely hardened in terms of anti-SEU capability. Meanwhile, two kinds of TID-induced leakage are solved through layout design.","PeriodicalId":124372,"journal":{"name":"2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"51 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134197148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental Study on Single Event Latch-up of a D/A Converter D/ a变换器单事件锁存的实验研究
2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2019-05-01 DOI: 10.1109/ICREED49760.2019.9205160
He Lv, Hongwei Zhang, Yong Li, Xiaoliang Li, Pengwei Li, B. Mei, Qingkui Yu, Yufei Zhang
{"title":"Experimental Study on Single Event Latch-up of a D/A Converter","authors":"He Lv, Hongwei Zhang, Yong Li, Xiaoliang Li, Pengwei Li, B. Mei, Qingkui Yu, Yufei Zhang","doi":"10.1109/ICREED49760.2019.9205160","DOIUrl":"https://doi.org/10.1109/ICREED49760.2019.9205160","url":null,"abstract":"The TLV5638 of TI Company is a D/A Converter. The device is extremely sensitive to space radiation environment. It will be happened single event latch-up. In this work, the single event latch-up effect of TLV5638 of TI Company is studied by using Heavy Ion Accelerator of HI-13. According to its use, the latch-up hardness measures of the current limiting resistor are given. The value range of the current limiting resistor is calculated and the latch-up protection is verified by experiment. It is concluded that single event function interruption and error are more likely to occur when the device is irradiated at lower voltage. The effectiveness of the protection method can automatically restore the working state of the device in the case of uninterrupted power, and the device does not have single event latch-up. According to the results of this study, it can be guaranteed that TLV5638 can avoid single event latchup in space applications.","PeriodicalId":124372,"journal":{"name":"2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128699561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study the performance of star sensor influenced by space radiation damage of image sensor 研究了空间辐射损伤对星敏感器性能的影响
2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2018-03-05 DOI: 10.1117/12.2317415
Jie Feng, Yudong Li, L. Wen, Qi Guo, Xing-yao Zhang
{"title":"Study the performance of star sensor influenced by space radiation damage of image sensor","authors":"Jie Feng, Yudong Li, L. Wen, Qi Guo, Xing-yao Zhang","doi":"10.1117/12.2317415","DOIUrl":"https://doi.org/10.1117/12.2317415","url":null,"abstract":"Star sensor is an essential component of spacecraft attitude control system. Spatial radiation can cause star sensor performance degradation, abnormal work, attitude measurement accuracy and reliability reduction. Many studies have already been dedicated to the radiation effect on CCD and CMOS image sensors, but fewer studies focus on the radiation effect of star sensor. The innovation of this paper is to study the radiation effects from the device level to the system level. The influence of the degradation of CCD and CMOS image sensor radiation sensitive parameters on the performance parameters of star sensor is studied in this paper. The correlation among the radiation effect of proton, the non-uniformity noise of CCD and CMOS image sensor and the performance parameter of star sensor is analyzed. This paper establishes a foundation for the study of error prediction and correction technology of star sensor on-orbit attitude measurement, and provides some theoretical basis for the design of high performance star sensor.","PeriodicalId":124372,"journal":{"name":"2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117182842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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