单轴应变Si纳米级NMOSFET衬底热载子的总剂量辐射响应

2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2019-05-01 DOI:10.1109/ICREED49760.2019.9205168

Minru Hao, Chen-Guang Liao, Hai-wei Fu, Guo‐Xiang Chen

{"title":"单轴应变Si纳米级NMOSFET衬底热载子的总剂量辐射响应","authors":"Minru Hao, Chen-Guang Liao, Hai-wei Fu, Guo‐Xiang Chen","doi":"10.1109/ICREED49760.2019.9205168","DOIUrl":null,"url":null,"abstract":"An analytical model of substrate hot carrier of the uniaxial strained Si Nano-scale NMOSFET has been developed due to total dose irradiation effect. The influence of total dose, geometry parameter on hot carrier substrate current was simulated by Sentaurus-TCAD. Thus, the proposed model provides good reference for research on irradiation reliability and application of strained integrated circuit of uniaxial strained Si Nano-scale NMOSFET.","PeriodicalId":124372,"journal":{"name":"2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Total Dose Radiation Response of Substrate Hot Carrier for Uniaxial Strained Si Nano-Scale NMOSFET\",\"authors\":\"Minru Hao, Chen-Guang Liao, Hai-wei Fu, Guo‐Xiang Chen\",\"doi\":\"10.1109/ICREED49760.2019.9205168\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An analytical model of substrate hot carrier of the uniaxial strained Si Nano-scale NMOSFET has been developed due to total dose irradiation effect. The influence of total dose, geometry parameter on hot carrier substrate current was simulated by Sentaurus-TCAD. Thus, the proposed model provides good reference for research on irradiation reliability and application of strained integrated circuit of uniaxial strained Si Nano-scale NMOSFET.\",\"PeriodicalId\":124372,\"journal\":{\"name\":\"2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICREED49760.2019.9205168\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICREED49760.2019.9205168","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

考虑总剂量辐照效应，建立了单轴应变硅纳米mosfet衬底热载子的解析模型。利用Sentaurus-TCAD软件模拟了总剂量、几何参数对热载子衬底电流的影响。因此，该模型为单轴应变Si纳米级NMOSFET应变集成电路的辐照可靠性研究和应用提供了良好的参考。

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Total Dose Radiation Response of Substrate Hot Carrier for Uniaxial Strained Si Nano-Scale NMOSFET

An analytical model of substrate hot carrier of the uniaxial strained Si Nano-scale NMOSFET has been developed due to total dose irradiation effect. The influence of total dose, geometry parameter on hot carrier substrate current was simulated by Sentaurus-TCAD. Thus, the proposed model provides good reference for research on irradiation reliability and application of strained integrated circuit of uniaxial strained Si Nano-scale NMOSFET.

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2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)

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