Electrical Characteristics of 400V Ultra-Thin SOI NLDMOS after Total Dose Irradiation

2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2019-05-01 DOI:10.1109/ICREED49760.2019.9205166

Lei Shu, Yuanfu Zhao, Liang Wang, Tianqi Wang, Xin Zhou, Zhangyi’an Yuan, Kai Zhao, Mingxue Huo, Chaoming Liu, Guo-Liang Ma, Yanqing Zhang, Chunhua Qi, M. Qiao, Wei-Ping Chen

引用次数: 0

Abstract

The electrical characteristics variations of 400V SOI NLDMOS after exposure to total dose irradiation are discovered. The mechanisms of these variations are analyzed and confirmed by TCAD simulations.

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400V超薄SOI NLDMOS全剂量辐照后的电学特性

发现了400V SOI NLDMOS在总剂量照射后的电特性变化。通过TCAD仿真分析和验证了这些变化的机理。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)

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