180nm 4T CMOS有源像素传感器总电离剂量诱导空间等效噪声电荷的建模与分析

2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2019-05-01 DOI:10.1109/ICREED49760.2019.9205164

Y. Tang, M. Wu, Y. Liu, W. Gao

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引用次数: 0

摘要

首先对CMOS APS的总电离剂量(TID)诱导的空间等效噪声电荷(ENC)进行了建模。利用60Co源进行了γ射线辐照实验，对模型进行了验证。总剂量小于60 krad (Si)时，最大误差小于10%。

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Modeling and Analysis of Total-Ionization-Dose Induced Spatial Equivalent Noise Charge of a 180-nm 4T CMOS Active Pixel Sensor

The modeling of total-ionization-dose (TID)-induced spatial equivalent noise charge (ENC) of a CMOS APS is firstly given. A γ-ray irradiation experiment using 60Co source is then performed to verify the models. The maximum error is less than 10% when the total dose is less than 60 krad (Si).

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2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)

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