400V超薄SOI NLDMOS全剂量辐照后的电学特性

2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2019-05-01 DOI:10.1109/ICREED49760.2019.9205166

Lei Shu, Yuanfu Zhao, Liang Wang, Tianqi Wang, Xin Zhou, Zhangyi’an Yuan, Kai Zhao, Mingxue Huo, Chaoming Liu, Guo-Liang Ma, Yanqing Zhang, Chunhua Qi, M. Qiao, Wei-Ping Chen

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引用次数: 0

摘要

发现了400V SOI NLDMOS在总剂量照射后的电特性变化。通过TCAD仿真分析和验证了这些变化的机理。

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Electrical Characteristics of 400V Ultra-Thin SOI NLDMOS after Total Dose Irradiation

The electrical characteristics variations of 400V SOI NLDMOS after exposure to total dose irradiation are discovered. The mechanisms of these variations are analyzed and confirmed by TCAD simulations.

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来源期刊

2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)

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