建立SiC对器件辐射效应物理模型的可行性分析

2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2019-05-01 DOI:10.1109/ICREED49760.2019.9205162

Xiuyu Zhang, Yifan Zhang, Yuan Gao, J. Xue

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引用次数: 0

摘要

基于COMSOL中MOSFET的范例，定制了6H-SiC的参数和迁移率模型。比较了不同迁移率模型对6H-SiC MOSFET稳态特性的影响。结果表明，可以建立一个物理模型来评价辐射对碳化硅和碳化硅器件的影响。

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Feasibility Analysis of Establishing a Physical Model of Radiation Effects from SiC to device

Based on the paradigm of MOSFET in COMSOL, the parameters of 6H-SiC and mobility models were customized. The effects of different mobility models on the stationary characteristics of the 6H-SiC MOSFET were compared. The results show that it is possible to establish a physical model to evaluate the irradiation effects on the SiC and SiC devices.

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来源期刊

2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)

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