质子辐射诱导CMOS图像传感器暗电流退化

2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) Pub Date : 2019-05-01 DOI:10.1109/ICREED49760.2019.9205172

Chao Liu, R. Zheng, Xiaomin Wei, Jia Wang, Yann Hu

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引用次数: 0

摘要

对CMOS图像传感器的暗电流噪声进行了质子辐射实验，研究了辐照过程中质子能量、通量、通量率和外加偏置电压对暗电流噪声均值和非均匀性的影响。并给出了室温退火试验结果。

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Proton Radiation Induced Dark Current Degradation in CMOS Image Sensor

The proton radiation experiment was carried out for the dark current noise of CMOS image sensor, and the influence of proton energy, fluence, fluence rate and applied bias voltage during irradiation on the mean value and non-uniformity of dark current noise were investigated. The annealing test results at room temperature were also presented.

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2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)

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