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Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference最新文献

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Sub-100 nm lithography using KrF exposure with multiple development method 亚100nm光刻采用KrF曝光与多重显影法
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797523
M. Asano
{"title":"Sub-100 nm lithography using KrF exposure with multiple development method","authors":"M. Asano","doi":"10.1109/IMNC.1999.797523","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797523","url":null,"abstract":"Describes a novel resist process technique, using a chemically amplified resist with a multiple development method for improving resolution of photolithography. By means of this technique, a grating resist pattern whose frequency is more than a cutoff frequency of the optics (vc=1/Pc=2NA//spl lambda/) can be delineated using a conventional exposure system. This process uses a resist that allows either positive or negative imaging depending on the selection of a developer solvent.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123098203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Theoretical estimation of photo-absorption of resist molecules in the EUV and VUV region 抗蚀剂分子在EUV和VUV区光吸收的理论估计
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797479
N. Matsuzawa, S. Mori, H. Oizumi, E. Yano, S. Okazaki, A. Ishitani
{"title":"Theoretical estimation of photo-absorption of resist molecules in the EUV and VUV region","authors":"N. Matsuzawa, S. Mori, H. Oizumi, E. Yano, S. Okazaki, A. Ishitani","doi":"10.1109/IMNC.1999.797479","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797479","url":null,"abstract":"Extreme ultraviolet lithography (EUVL) and vacuum ultraviolet lithography (VUVL) at a wavelength of 13 nm and 157 nm, respectively, are promising candidates for the fabrication of patterns with feature sizes of 100 nm and below. One of the most important parameters in the design of photoresist materials is the absorption coefficient of a polymer because, if the polymer is not transparent enough, the resist pattern deteriorates. Thus, as the starting point of our theoretical study on ELJV and VUV resist polymers, we have performed an estimation of photo-absorption in these wavelength regions. The absorption coefficients of about 150 polymers were calculated using the mass absorption coefficients of Henke et al. (1993). It is found that the inclusion of fluorine atoms in a polymer significantly increases the absorption, whereas the inclusion of aromatic rings reduces it. In addition, polymers containing silicon atoms are generally more transparent than those consisting of C, H, and O (and N) atoms.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116553915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Challenges for VUV lithography VUV光刻面临的挑战
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797473
M. Sasago
{"title":"Challenges for VUV lithography","authors":"M. Sasago","doi":"10.1109/IMNC.1999.797473","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797473","url":null,"abstract":"The paper discusses the challenges of current optical lithography processes such as VUV lithography. Future miniaturization trends in semiconductor production are also discussed.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124793571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of periodic Si nanocages by lithographic anodization 光刻阳极氧化法制备周期硅纳米笼
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797506
T. Baba, M. Hashimoto, T. Nakagawa, N. Koshida
{"title":"Fabrication of periodic Si nanocages by lithographic anodization","authors":"T. Baba, M. Hashimoto, T. Nakagawa, N. Koshida","doi":"10.1109/IMNC.1999.797506","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797506","url":null,"abstract":"It has been shown that periodic Si nanostructures with nanometer-scale pores can be formed by controlled anodization of heavily doped n-type Si wafer. We have also studied a nanofabrication process by dual-functional refractory metal oxide (MoO/sub 3/ and WO/sub 3/) resists for a Ga/sup +/-focused ion beam (FIB) exposure. In this paper, we demonstrate that controllability of periodic Si nanostructures formation can be enhanced by appropriate combination of the above two techniques.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"173 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123708696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Imaging characteristics of 0.12 /spl mu/m DRAM pattern by KrF lithography 0.12 /spl mu/m DRAM图形的KrF光刻成像特性
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797494
S. Nakao, K. Tsujita, I. Arimoto, W. Wakamiya
{"title":"Imaging characteristics of 0.12 /spl mu/m DRAM pattern by KrF lithography","authors":"S. Nakao, K. Tsujita, I. Arimoto, W. Wakamiya","doi":"10.1109/IMNC.1999.797494","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797494","url":null,"abstract":"Feasibility of 0.12 /spl mu/m DRAM pattern formation by KrF lithography is investigated by optical image calculations. Using modified illumination optimized for the specific pattern and attenuating phase shift mask (PSM), depth of focus (DOF) can be achieved up to /spl sim/0.8 /spl mu/m under high numerical aperture (NA) of 0.75. However, the image quality is significantly degraded by lens aberration. Accordingly, the development of low aberration lens is inevitable to realize 0.12 /spl mu/m DRAM by KrF lithography.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124390643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of quartz micro-capillary electrophoresis chips for health care devices 医疗器械用石英微毛细管电泳芯片的研制
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797535
T. Kikuchi, T. Ujiie, T. Ichiki, Y. Horiike
{"title":"Fabrication of quartz micro-capillary electrophoresis chips for health care devices","authors":"T. Kikuchi, T. Ujiie, T. Ichiki, Y. Horiike","doi":"10.1109/IMNC.1999.797535","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797535","url":null,"abstract":"We proposed the \"health care device\", which is an intelligent micro-analytical system for the on-chip inspection of human health. As a first step we have fabricated a quartz micro-capillary electrophoresis chip using high density plasma etching and demonstrated its high-performance capillary electrophoresis operation.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125752746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Quantum-dot cellular automata 量子点细胞自动机
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-06-01 DOI: 10.1036/1097-8542.YB041015
G. Snider, A. Orlov, I. Amlani, G. Bernstein, C. Lent, J. Merz, W. Porod
{"title":"Quantum-dot cellular automata","authors":"G. Snider, A. Orlov, I. Amlani, G. Bernstein, C. Lent, J. Merz, W. Porod","doi":"10.1036/1097-8542.YB041015","DOIUrl":"https://doi.org/10.1036/1097-8542.YB041015","url":null,"abstract":"Quantum-dot Cellular Automata (QCA) is a promising architecture which employs quantum dots for digital computation. It is a revolutionary approach which addresses the issues of device density and power dissipation. With a dot size of 20 nm an entire full adder would occupy only one square micron, and the power delay product is as low as a few kT. A basic QCA cell consists of four quantum dots coupled capacitively and by tunnel barriers. The cell is biased to contain two excess electrons within the four dots, which are forced to opposite \"corners\" of the four-dot system by Coulomb repulsion. These two possible polarization states of the cell represent logic \"0\" and \"1\". Properly arranged, arrays of these basic cells can implement Boolean logic functions. We present experimental results from functional QCA devices built of nanoscale metal dots defined by tunnel barriers.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128403015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
Electron beam doping (superdiffusion) in damage-free regions of semiconductors by the kick-out mechanism (SIMS and PL measurements) 电子束在半导体无损伤区通过踢出机制掺杂(超扩散)(SIMS和PL测量)
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1900-01-01 DOI: 10.1109/IMNC.1999.797518
T. Wada, T. Kato, H. Fujomoto, F. Yasui, K. Ohtsu, T. Saka
{"title":"Electron beam doping (superdiffusion) in damage-free regions of semiconductors by the kick-out mechanism (SIMS and PL measurements)","authors":"T. Wada, T. Kato, H. Fujomoto, F. Yasui, K. Ohtsu, T. Saka","doi":"10.1109/IMNC.1999.797518","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797518","url":null,"abstract":"It is shown that electron-beam doping processes (superdiffusion) in semiconductors are useful for microprocesses, even in the damage-free region and at room temperature, and these experimental results are in good agreement with the exact solutions of the so-called kick-out mechanism. Silicon and zinc atoms diffuse into GaAs wafers, respectively due to the kick-out mechanism by electron beam doping.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122054300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Lateral silicon field emission devices using electron beam lithography 采用电子束光刻技术的横向硅场发射装置
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1900-01-01 DOI: 10.1109/imnc.1999.797513
Hyungcheol Shin, Sun-A Yang, Taekeun Hwang, Sangyeon Han, Jongho Lee, Yjong Duk Lee
{"title":"Lateral silicon field emission devices using electron beam lithography","authors":"Hyungcheol Shin, Sun-A Yang, Taekeun Hwang, Sangyeon Han, Jongho Lee, Yjong Duk Lee","doi":"10.1109/imnc.1999.797513","DOIUrl":"https://doi.org/10.1109/imnc.1999.797513","url":null,"abstract":"For low voltage and high speed operation of field emission vacuum microelectronic devices, sharp cathode tips and minimal cathode to anode spacing are needed. In this work, lateral field emission diodes and triodes have been fabricated using high-resolution electron beam (EB) lithography in combination with reactive ion etching (RIE) techniques. The characteristics of the fabricated devices are presented.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124982695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Giga-era dielectric etch: challenges and solutions 千兆电介质蚀刻:挑战和解决方案
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1900-01-01 DOI: 10.1109/IMNC.1999.797553
H. Shan
{"title":"Giga-era dielectric etch: challenges and solutions","authors":"H. Shan","doi":"10.1109/IMNC.1999.797553","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797553","url":null,"abstract":"Moore's law has generally guided the semiconductor micro-fabrication for the last three decades. Along this trend, a giga era is approaching: gigabit memory devices and giga Hertz microprocessors will be developed around the millennium. The author first discusses both technological and economical challenges to dielectric etch of the gigaera, from a semiconductor equipment vendor's point of view, then presents some of recently developed solutions.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132152470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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