电子束在半导体无损伤区通过踢出机制掺杂(超扩散)(SIMS和PL测量)

Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1900-01-01 DOI:10.1109/IMNC.1999.797518

T. Wada, T. Kato, H. Fujomoto, F. Yasui, K. Ohtsu, T. Saka

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引用次数: 0

摘要

结果表明，即使在无损伤区和室温下，半导体中的电子束掺杂过程(超扩散)对微过程也是有用的，并且这些实验结果与所谓的踢出机制的精确解是一致的。由于电子束掺杂的踢出机制，硅原子和锌原子分别扩散到砷化镓晶圆中。

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Electron beam doping (superdiffusion) in damage-free regions of semiconductors by the kick-out mechanism (SIMS and PL measurements)

It is shown that electron-beam doping processes (superdiffusion) in semiconductors are useful for microprocesses, even in the damage-free region and at room temperature, and these experimental results are in good agreement with the exact solutions of the so-called kick-out mechanism. Silicon and zinc atoms diffuse into GaAs wafers, respectively due to the kick-out mechanism by electron beam doping.

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Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference

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