{"title":"An investigation of SEM overlay metrology","authors":"T. Koike, T. Ikeda, H. Abe, F. Komatsu","doi":"10.1109/IMNC.1999.797541","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797541","url":null,"abstract":"We examine the accuracy and precision of SEM-based overlay metrology in the case of marks covered with thick resist film. We measured the overlay error by optimizing beam condition, and compared the results with those obtained by optics-based measurement.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123740878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Fukutome, S. Hasegawa, T. Okui, H. Nakashima, Takayuki Aoyama, Hiroshi Arimoto
{"title":"Scanning tunneling microscopy study of annealing effects on Si nanoscaled pn junctions formed by ion implantation","authors":"H. Fukutome, S. Hasegawa, T. Okui, H. Nakashima, Takayuki Aoyama, Hiroshi Arimoto","doi":"10.1109/IMNC.1999.797470","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797470","url":null,"abstract":"","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"218 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115521940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High density metal dot arrays formed by electron beam induced nucleation method","authors":"K. Tsutsui, A. Himura, M. Mochizuki, K. Kawasaki","doi":"10.1109/IMNC.1999.797458","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797458","url":null,"abstract":"Artificial site control of quantum dots formed by self-assemble like processes is very attractive. Previously, we proposed the method in which surface of an epitaxial CaF/sub 2/ film was modified by focused electron beam exposure and a Ga droplet grew on the each exposed site by preferential nucleation of migrating Ga atoms. In this paper, we improved the process to obtain high resolution, and obtained uniform and high density Ga dot arrays where diameter of each dots was 10nm and period was less than 20nm were formed.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124972365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Manipulations of densities and sizes during self-assembling quantum dots in MOVPE","authors":"W. Seifert, J. Johansson, N. Carlsson","doi":"10.1109/IMNC.1999.797456","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797456","url":null,"abstract":"Quantum dot structures in the form of coherent 3-dimensional islands can be grown in-situ by \"self-assembling\". The specifics of self assembling is that strain in a critically thick 2-dimensional wetting layer acts as the driving force for a transition towards an energetically favoured 2-dimensional (wetting)+ 3-dimensional (island) Stranski-Krastanow morphology. The initiation mechanism of the 2D-3D transition is a nucleation step, followed by growth and reorganization of material (redistribution of material from the wetting layer, ripening processes). As a consequence, for a given misfit between substrate and epilayer, densities and sizes of self-assembled 3D islands are mostly affected by the actual deposition conditions. In the following we will show to which extent densities and sizes of 3D islands deliberately can be manipulated by varying the deposition parameters Q (deposited amount), T (deposition temperature) and R (deposition rate). The chosen materials system for","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114837518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Ghost exposure of chemically amplified resist caused by acids generated in environmental air with KrF exposure","authors":"Y. Kawai, K. Deguchi, J. Nakamura","doi":"10.1109/IMNC.1999.797550","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797550","url":null,"abstract":"We discuss the ghost exposure of a chemically amplified resist in KrF excimer laser lithography, which is attributed to acids in the environmental air generated by laser irradiation. These acids diffused into the resist film and acted as catalytic acids. The ghost exposure expanded to more than 10 mm outside the exposure field and deteriorated the patterning characteristics. Controlling the environmental air so that it does not generate acids is important in order to improve CD control.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121776413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Nagai, T. Enami, T. Nishisaka, J. Fujimoto, O. Wakabayashi, H. Mizoguchi
{"title":"Development of kHz F/sub 2/ laser for 157 nm lithography","authors":"S. Nagai, T. Enami, T. Nishisaka, J. Fujimoto, O. Wakabayashi, H. Mizoguchi","doi":"10.1109/IMNC.1999.797478","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797478","url":null,"abstract":"We have been developing a high repetition rate discharge-pumped molecular fluorine laser for 157 nm microlithography. We have developed a high repetition rate solid state pulsed power module (SSPPM) up to 800 Hz. This laser adopts a stable resonator composed of a MgF/sub 2/ high reflection plane mirror and a MgF/sub 2/ output coupler, which show high transmittance and durability for VUV light. To avoid attenuation of the 157 nm radiation due to the absorption of O/sub 2/, all the optical path including optics and detectors are continually flushed by pure nitrogen at least below 100 ppm O/sub 2/ concentration.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133830399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Yamashita, S. Manako, E. Nomura, K. Nakajima, H. Nozue
{"title":"Spatial distribution of mask-scattered electrons through scattering stencil mask","authors":"H. Yamashita, S. Manako, E. Nomura, K. Nakajima, H. Nozue","doi":"10.1109/IMNC.1999.797461","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797461","url":null,"abstract":"Electron-beam (EB) projection methods, such as SCALPEL and PREVAIL are among the candidates for next generation lithography. In these methods, EB masks are used to gain high throughput of the exposure systems. Absorber or scatterer combining with opening or membrane of those masks are structured to produce an image contrast on the wafer.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115996237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Microfabricated structures for cell characterization, separation and culture","authors":"Y. Kikuchi","doi":"10.1109/IMNC.1999.797449","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797449","url":null,"abstract":"Eukaryotic cells have all fundamental functions of life, such as metabolism, excitability, locomotion, and reproduction. Biotechnology aims to effectively use these cellular functions for artificial objectives by controlling intraand intercellular biophysical and biochemical processes including gene expression. However, techniques actually used or usable are very restricted by high variability of cell natures and also fragility of cells with artificial treatments. Technical difficulties also arise from micrometer dimensions of cells. Many researchers would well recognize that micromachining has most useful applications in biotechnology and related fields. In such applications, however, another difficulty appears to exist for engineering researchers to know real needs or requests for microdevices and conditions for their use in the cell technology processes. Any misdesign should lead to mismatch to other procedures and final uselessness. We report here a successful use of micromachined channel arrays in studies of flow properties of blood cells or, more widely, in characterization of cells by their mechanical properties such as deformability, adhesiveness, and motility and an attempt to further use them in separation of cells according to differences in these characters. Micropit arrays are also described for use in cell culture, which now becomes a basic process of cell science and biotechnology.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"168 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125987863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"First operation of compact SR ring \"AURORA-2S\"","authors":"T. Hori","doi":"10.1109/IMNC.1999.797454","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797454","url":null,"abstract":"A compact synchrotron light source has been being developed since mid 1980's from the viewpoint of optimization for industrial use, especially for X-ray lithography. The original ring named AURORA, being in routine operation at Ritsumeikan University from 1996, was designed under the trends of those days in applying superconducting technology to such the small SR rings. There are two variations in the second AURORA, which has a racetrack shape. One is AURORA-2S (A2S) designed towards X-ray lithography regarded as a successor of the first, and the other AURORA-2D (A2D) to be appropriate for various scientific researches by its capability of placing two insertion devices in the elongated straight section.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"169 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127542888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"In situ monitoring of semiconductor processes using synchrotron radiation [growth and cleaning]","authors":"Y. Takaku","doi":"10.1109/IMNC.1999.797531","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797531","url":null,"abstract":"In this review paper, discussion is focused on the in-situ monitoring of gas source molecular beam epitaxy (GSMBE) and photon-induced hydrogen removal on Si surfaces using synchrotron radiation photoelectron spectroscopy.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131057775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}