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Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference最新文献

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Automatic determination of spatial dose distribution for improving accuracy in e-beam proximity effect correction 为提高电子束接近效应校正精度而自动测定空间剂量分布
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797503
S. Lee, J. Laddha
{"title":"Automatic determination of spatial dose distribution for improving accuracy in e-beam proximity effect correction","authors":"S. Lee, J. Laddha","doi":"10.1109/IMNC.1999.797503","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797503","url":null,"abstract":"Proximity effect correction in E-beam lithography is expected to be an essential step in fabrication of high-density fine-feature circuits in the future. In the past, we demonstrated successful proximity correction by a shape modification approach with a single dose for the entire circuit pattern. This approach has a few advantages over dose modification, including the fact that it is \"compatible\" with future multiple-beam or projection-based systems. As we continue to reduce the minimum feature size, accuracy of correction becomes more critical. In order to improve correction accuracy of the shape-only modification, a hybrid approach allowing region-wise dose control was proposed previously. In this paper, a practical fast scheme for determining spatial dose distribution is presented.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126850423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Contact hole etch scaling toward 0.1 /spl mu/m 接触孔蚀刻缩放到0.1 /spl mu/m
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797554
N. Aoi, S. Hayashi, M. Yamanaka, M. Kubota, M. Ogura
{"title":"Contact hole etch scaling toward 0.1 /spl mu/m","authors":"N. Aoi, S. Hayashi, M. Yamanaka, M. Kubota, M. Ogura","doi":"10.1109/IMNC.1999.797554","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797554","url":null,"abstract":"Non-linear relation between contact etching depth and contact diameter has long been studied concerning with etching mechanism. Recently, McNevin et al. reported a linear relation between etched depth (D) and 1//spl phi/ (/spl phi/=contact diameter) for deep sub-micron contact hole etching. However, their proposed relation is not enough to access some mechanism of high-aspect ratio contact etching. Almost 10 years ago, we proposed a very simple relation for etching depth dependence on pattern width in a silicon trench etching. In the relation, 1/D linearly depended upon l/w (w=pattern width) with strong correlation. In this paper, we will propose a new simple relation between D and /spl phi/ with a small modification of our proposed relation for silicon trench, which can be expanded into deep quarter micron contact hole etching down to 0.1 /spl mu/m.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125338571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Recent progress and future developments in EB mask writing for X-ray lithography x射线光刻用EB掩模书写的最新进展及未来发展
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797450
Y. Nakayama
{"title":"Recent progress and future developments in EB mask writing for X-ray lithography","authors":"Y. Nakayama","doi":"10.1109/IMNC.1999.797450","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797450","url":null,"abstract":"Proximity X-ray lithography is one of the most promising candidate for mass production of the next generation ULSI devices. Among the key technologies of proximity X-ray lithography, fine and precise X-ray mask fabrication is most important issue. According to SIA Roadmap high-accurate image placement and CD control within 10 nm of X-ray mask are required for 0.1-/spl mu/m ULSI device fabrication. Therefore a great deal of developments should be achieved for X-ray mask fabrication which was contained mask materials and mask-fabrication processes including pattern delineation using electron-beam (EB) writer. Especially improvement in EB mask writing is indispensable for high-accurate image placement and CD control. In this paper, recent progress and future developments in EB mask writing for X-ray lithography are described.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115181925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sub-quarter-micron Al etching technology using SiON hard mask in transformer coupled plasma (TCP) etcher 在变压器耦合等离子体(TCP)蚀刻机中使用硅硬掩模的亚四分之一微米铝蚀刻技术
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797555
C. Park, H. Shin, J.W. Kim, Y. Seol, I. Choi
{"title":"Sub-quarter-micron Al etching technology using SiON hard mask in transformer coupled plasma (TCP) etcher","authors":"C. Park, H. Shin, J.W. Kim, Y. Seol, I. Choi","doi":"10.1109/IMNC.1999.797555","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797555","url":null,"abstract":"Aluminum (Al) has been widely used as an interconnecting material for integrated circuits. As the manufacturing of integrated circuits moves toward sub-quarter-micron design rules, there is a strong need for Al etching process with thin Photo Resist (PR). This leads to even more challenging with more complicated Al etching schemes and smaller width of thicker Al line (<0.3 /spl mu/m). In order to meet the needs for tighter critical dimension (CD) control of Al line, higher selectivity of Al to PR and higher anisotropy, hard mask Al etching process was applied. In this study, SiON which is being used for Anti Reflective Coating (ARC) layer of Deep Ultra Violet (DUV) PR, was selected as a hard mask to Al etching, the feasibility of in-situ SiON hard mask and Al etching process was tested in TCP metal etcher. And also, it was investigated that the process parameters played an important role in the control of Al profile for 0.13/spl mu/m design rules.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132242519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel Si nanocrystal formation technique as applied to fabrication of Si nanostructure 新型硅纳米晶形成技术应用于硅纳米结构的制备
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797505
M. Takeguchi, K. Furuya, K. Yoshihara
{"title":"Novel Si nanocrystal formation technique as applied to fabrication of Si nanostructure","authors":"M. Takeguchi, K. Furuya, K. Yoshihara","doi":"10.1109/IMNC.1999.797505","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797505","url":null,"abstract":"The fabrication of nanometer sized structure (nanostructure) has been attractive in the field of material science because the appearance of novel physical and optical properties is expected in low-dimensional and size-reduced materials. We have discovered that Si nanocrystals can be formed in a SiO/sub 2/ thin film under irradiation of an electron beam at high temperature. The specimen in the present work was prepared from a SiO/sub 2/ single crystal (quartz). The acceleration voltage of an electron beam was 100 kV in order to reduce sputtering for Si atoms. The thin area of the SiO/sub 2/ film was easily amorphized by irradiation of the electron beam even if the current density was less than 10/sup 5/ A/m/sup 2/. When the high intensity electron beam was focused on the amorphized SiO/sub 2/ thin film at 850 K inside an UHV-FE-TEM, crystalline Si nanoparticles emerged at the irradiated area, the diameter of which was as large as the beam diameter (several nm).","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114719918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
CD controllability evaluation based on process error distribution for 150-nm devices 基于工艺误差分布的150nm器件CD可控性评价
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797548
M. Fujimoto, K. Yamanaka, T. Uchiyama, S. Matsuura, T. Yamazaki, T. Hashimoto, K. Kasama
{"title":"CD controllability evaluation based on process error distribution for 150-nm devices","authors":"M. Fujimoto, K. Yamanaka, T. Uchiyama, S. Matsuura, T. Yamazaki, T. Hashimoto, K. Kasama","doi":"10.1109/IMNC.1999.797548","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797548","url":null,"abstract":"The design rule of ULSI devices is now approaching the 150 nm region, and highly accurate critical dimension (CD) control is required. Due to the delay of the development of ArF resists and exposure tools, KrF lithography is considered as the most promising technology for 150 nm devices. Since the imaging performance for such a small feature size is not sufficient in KrF lithography, higher NA lenses with higher resolution are necessary. However, the problem is that as the NA becomes higher, it generally becomes much more difficult and takes a longer period to design and manufacture a projection lens with small aberrations in the full exposure field. In this study, we investigate the influences of various error factors on CD fluctuation and discuss the CD controllability of 150 nm patterns, focusing on the effects of high NA KrF exposure.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133767420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Conditions for highly conductive wire fabrication by electron-beam-induced deposition 电子束诱导沉积制备高导电性导线的条件
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797533
H. Hiroshima, N. Suzuki, M. Komuro
{"title":"Conditions for highly conductive wire fabrication by electron-beam-induced deposition","authors":"H. Hiroshima, N. Suzuki, M. Komuro","doi":"10.1109/IMNC.1999.797533","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797533","url":null,"abstract":"Electron-beam-induced deposition (EBID) is one of the most promising processes for direct nanofabrication. Through EBID using WF/sub 6/, we have fabricated conductive wires 10-20 nm wide whose lowest resistivity was 600 /spl mu//spl Omega//spl middot/cm. Despite dry evacuation and EBID in an ultra-high vacuum (UHV), wires were often obtained having several orders higher resistivity compared to the best result. Highly conductive wires seemed difficult to be reproducibly fabricated using more careful preparation of samples and/or wet cleaning before EBID. Here, we applied additional dry cleaning such as O/sub 2/ plasma treatment and annealing process before EBID, and clarified conditions for highly conductive wire fabrication.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133964236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Energy intensity distribution on thinned X-ray mask substrate in 100 kV electron beam writing 100kv电子束写入时薄x射线掩模衬底上的能量强度分布
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797497
S. Aya, T. Murakami, K. Kise, K. Kitamura, H. Yabe, K. Marumoto, S. Safoh
{"title":"Energy intensity distribution on thinned X-ray mask substrate in 100 kV electron beam writing","authors":"S. Aya, T. Murakami, K. Kise, K. Kitamura, H. Yabe, K. Marumoto, S. Safoh","doi":"10.1109/IMNC.1999.797497","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797497","url":null,"abstract":"In this work the authors have evaluated the energy intensity distributions on thinned x-ray masks by the combination of the dot exposure and line exposure methods in 100 kV electron beam writing.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123499381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of nano holes array on Si substrate using anodically oxidized aluminum etching mask 用阳极氧化铝蚀刻掩膜在硅衬底上制备纳米孔阵列
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797508
S. Shingubara, O. Okino, K. Nakaso, H. Sakaue, T. Takahagi
{"title":"Fabrication of nano holes array on Si substrate using anodically oxidized aluminum etching mask","authors":"S. Shingubara, O. Okino, K. Nakaso, H. Sakaue, T. Takahagi","doi":"10.1109/IMNC.1999.797508","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797508","url":null,"abstract":"The present study aims at the pattern transfer of nano hole array of alumina to Si semiconductor single crystalline substrates for wide applications to micro-electronics. The authors have succeeded in nano holes array fabrication on Si with diameter much smaller than that of the porous alumina nano holes etching mask. The etching process combined with sputtering and redeposition effect was very effective to reduce the transferred hole array from 60 to 13 nm. The present method is very promising for fabrication of room temperature operated quantum dot devices.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121686054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Interaction of F/sub 2/ excimer laser light with various types of synthetic SiO/sub 2/ glasses: towards the 3rd generation of synthetic silica F/sub - 2/准分子激光与各类合成SiO/sub - 2/玻璃的相互作用:迈向第三代合成二氧化硅
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797474
H. Hosono, M. Mizuguchi, T. Ogawa
{"title":"Interaction of F/sub 2/ excimer laser light with various types of synthetic SiO/sub 2/ glasses: towards the 3rd generation of synthetic silica","authors":"H. Hosono, M. Mizuguchi, T. Ogawa","doi":"10.1109/IMNC.1999.797474","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797474","url":null,"abstract":"The authors consider the VUV-UV optical transmission spectra of synthetic silica specimens before and after F/sub 2/ laser irradiation. The absorption edge in the specimens differs from sample to sample: the absorption edge of the F-doped specimen is located at a shorter wavelength (153 nn) compared with the wet SiO/sub 2/ (155 nm) or the dry SiO/sub 2/ (157nm).","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129412917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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