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Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference最新文献

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Self-assembling of silicon quantum dots and its application to floating gate memory 硅量子点的自组装及其在浮门存储器中的应用
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797488
S. Miyazaki, H. Murakami, M. Ikeda, E. Yoshida, A. Kohno, M. Hirose
{"title":"Self-assembling of silicon quantum dots and its application to floating gate memory","authors":"S. Miyazaki, H. Murakami, M. Ikeda, E. Yoshida, A. Kohno, M. Hirose","doi":"10.1109/IMNC.1999.797488","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797488","url":null,"abstract":"In this paper, we describe a formation mechanism of nanometer Si dots on thermally-grown SiO/sub 2/ during LPCVD using SiH/sub 4/. And also, for MOS devices with nanometer Si dots as a floating gate, we demonstrate the memory operation due to electron charging to the dots at room temperature.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115161813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal characteristics of scattering stencil reticle for EB stepper EB步进机散射网架的热特性
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797502
N. Hirayanagi, S. Suzuki, S. Kawata, H. Mizukami, S. Takahashi, Y. Miki
{"title":"Thermal characteristics of scattering stencil reticle for EB stepper","authors":"N. Hirayanagi, S. Suzuki, S. Kawata, H. Mizukami, S. Takahashi, Y. Miki","doi":"10.1109/IMNC.1999.797502","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797502","url":null,"abstract":"Electron Beam (EB) projection system is proposed as a candidate of next generation lithography systems for feature sizes of less than 100nm. We are developing this technology as \"EB stepper\" that has high resolution and throughput. EB projection system also needs a development of EB reticle. A scattering stencil type (thin silicon membrane with openings representing the pattern to be exposed) reticle with a grid-grillage structure is being investigated. In the case of a conventional cell projection mask which consists of absorbers and apertures, the deformation caused by thermal expansion can not be ignored for a quarter-micron lithography. The temperature at the beam position rises drastically with the irradiation power of EB. We evaluated the deformation of a scattering stencil reticle, due to thermal expansion and bending by gravity.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134414265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A micro-fabricated scanning force microscope using a 3-dimensional piezoelectric T-shape actuator 采用三维压电t形作动器的微型扫描力显微镜
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797514
J. Chu, R. Maeda, T. Itoh, K. Kataoka, T. Suga
{"title":"A micro-fabricated scanning force microscope using a 3-dimensional piezoelectric T-shape actuator","authors":"J. Chu, R. Maeda, T. Itoh, K. Kataoka, T. Suga","doi":"10.1109/IMNC.1999.797514","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797514","url":null,"abstract":"Recently, scanning force microscopy (SFM) has gained much attention for its potential in surface lithography and data storage applications, particularly because of its capability for very small bit size. However, there are problems to be overcome before SFM can be used for real practical lithography and data storage, particularly its low throughput. In order to overcome these problems, we need small SFM volumes and simple SFM structures. In this report we propose a micro-fabricated SFM device. We expect it to replace the cantilever, deflection detection unit and the scanner currently being used in traditional SFMs.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133303048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel dual working organic bottom anti-reflective coating for 193, 248 nm lithography 用于193,248 nm光刻的新型双工作有机底防反射涂层
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797485
Min-Ho Jung, Sungbo Hong, Jong-Kook Kim, Jinsoo Kim, J. Jung, Geunsu Lee, Hyeongsoo Kim, Kiho Baik, I. Choi
{"title":"Novel dual working organic bottom anti-reflective coating for 193, 248 nm lithography","authors":"Min-Ho Jung, Sungbo Hong, Jong-Kook Kim, Jinsoo Kim, J. Jung, Geunsu Lee, Hyeongsoo Kim, Kiho Baik, I. Choi","doi":"10.1109/IMNC.1999.797485","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797485","url":null,"abstract":"In the lithographic processing, application of a bottom anti-reflective coating (BARC) has proven to provide a number of benefits, such as elimination of reflective notching generated by reflections from highly reflective substrates, reduced swing effects caused by thin film interference, and therefore improved line-width control. To achieve such benefits, the organic BARC materials should have strong absorption at the exposure wavelength, high etch rate and matching to commercial chemically amplified resist. In design concept, the formulation of organic BARC material requires a minimum of two functional parts i.e., a chromophore to control the reflection and a cross-linking part to avoid intermixing with resist cast on it. In this paper, we report the performance of new organic BARC materials designed to work for lithographic applications at 248 nm as well as 193 nm simultaneously.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"157 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133893582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
X-ray and EUV liquid-jet-target laser-plasma sources based on solutions and cryogenic liquids 基于溶液和低温液体的x射线和EUV液体-喷射目标激光等离子体源
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797496
B. Hansson, L. Rymell, M. Berglund, H. Hertz
{"title":"X-ray and EUV liquid-jet-target laser-plasma sources based on solutions and cryogenic liquids","authors":"B. Hansson, L. Rymell, M. Berglund, H. Hertz","doi":"10.1109/IMNC.1999.797496","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797496","url":null,"abstract":"Here we report on new experiments, extending the laser produced plasma source's applicability for lithography by producing liquid-jet targets of substances that are gases or solids at normal pressure and temperature. This development is important since new wavelength ranges become accessible. Furthermore, the possibility to chose high-Z target material should lead to higher conversion efficiencies.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"319 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123328906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
HRTEM study on the structure of Ge nanoparticles by using a UHV-MBE-TEM system 利用UHV-MBE-TEM系统研究锗纳米颗粒的结构
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797517
Y. Wu, M. Takeguchi, K. Furuya
{"title":"HRTEM study on the structure of Ge nanoparticles by using a UHV-MBE-TEM system","authors":"Y. Wu, M. Takeguchi, K. Furuya","doi":"10.1109/IMNC.1999.797517","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797517","url":null,"abstract":"Ge nanoparticles smaller than 4 nm in diameter were deposited on Si TEM samples and directly transferred into TEM using a UHV-MBE-TEM system. The structure of some nanoparticles was different from diamond structure. Some Ge nanocrystals even become amorphous and then fluctuate during HRTEM observation.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"217 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115190673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characteristics distribution of narrow channel MOSFET memories with silicon nano-crystal floating gates 硅纳米晶浮栅窄沟道MOSFET存储器的特性分布
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797489
E. Nagata, N. Takahashi, H. Ishikuro, T. Hiramoto
{"title":"Characteristics distribution of narrow channel MOSFET memories with silicon nano-crystal floating gates","authors":"E. Nagata, N. Takahashi, H. Ishikuro, T. Hiramoto","doi":"10.1109/IMNC.1999.797489","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797489","url":null,"abstract":"MOSFET memories with silicon nano-crystal floating gates have recently attracted much attention as future memory devices with low power consumption and high writing endurance. In order to obtain higher packing densities, the small dimension of memory devices is essential. It has been reported that the threshold voltage shift becomes larger as the channel width of MOSFET memory is narrower. However, it is easily speculated that as the channel width becomes narrower, the distribution of threshold voltage shift also becomes larger. In this paper, the width dependence of threshold voltage shift and its distribution is evaluated in narrow channel MOSFET memories with silicon nano-crystal floating gates. It is indicated that the precise control of silicon nano-crystal distribution is necessary for small memory devices.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127510217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Unified simulation of Coulomb interactions and aberrations in charged particle optics by direct ray tracing 用直接射线追踪统一模拟带电粒子光学中的库仑相互作用和像差
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797556
E. Munro
{"title":"Unified simulation of Coulomb interactions and aberrations in charged particle optics by direct ray tracing","authors":"E. Munro","doi":"10.1109/IMNC.1999.797556","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797556","url":null,"abstract":"The performance of electron and ion beam columns for micro-fabrication and inspection is limited by the combined effects of electron optical aberrations and discrete Coulomb interactions. The accurate simulation of such columns is essential for their design and optimization, particularly in the case of state-of-the-art charged particle lithography columns which use projection optics with high beam currents. Historically, the electron optical aberrations have been computed using paraxial rays and aberration integrals, while the Coulomb aberrations have been simulated using N-body Monte Carlo simulation with thin-lens approximations for the lenses. These approaches have many drawbacks, including: (a) The aberrations of cathode lenses cannot be accurately analyzed; (b) The thin-lens approximations don't allow the lens aberrations to be properly combined with the Coulomb effects; (c) The conventional aberration theory divides the aberrations into terms of various orders, and it is hard to know a priori how many orders are required for an accurate solution; (d) The thin-lens approximations are quite unrealistic for electrostatic lenses with extended fields. A new simulation method has been developed that computes the aberrations and Coulomb interactions simultaneously in a unified way, by direct ray tracing. This new method overcomes all problems mentioned above and provides accurate results in a reasonable computation time.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116948637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Integrated microfabricated devices for genetic assays 用于基因分析的集成微加工装置
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797475
C. Mastrangelo, M. Burns, D. T. Burke
{"title":"Integrated microfabricated devices for genetic assays","authors":"C. Mastrangelo, M. Burns, D. T. Burke","doi":"10.1109/IMNC.1999.797475","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797475","url":null,"abstract":"Genetic assays are powerful technology drivers and excellent candidate applications for miniaturization technologies because the demand for inexpensive genetic information is essentially unlimited, and the cost and time for the assay decrease with sample volume. Genetic information is stored in long DNA molecules in solution. Processing of DNA molecules in the microscale hence requires the implementation of microfluidic devices capable of handling, mixing, thermal cycling, separating, and detecting nano and pico liter liquid samples. This paper discusses the implementation of integrated microfluidic devices for DNA processing.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114855632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Feasibility of VUV lithography VUV光刻的可行性
Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797480
N. Shiraishi, S. Owa
{"title":"Feasibility of VUV lithography","authors":"N. Shiraishi, S. Owa","doi":"10.1109/IMNC.1999.797480","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797480","url":null,"abstract":"The feasibility of F/sub 2/ lithography (VUV lithography) was discussed positively from a viewpoint of optical materials and mask materials. The laser durability of CaF/sub 2/ and new materials for the F/sub 2/ mask substrate are discussed.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122061816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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