硅量子点的自组装及其在浮门存储器中的应用

Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI:10.1109/IMNC.1999.797488

S. Miyazaki, H. Murakami, M. Ikeda, E. Yoshida, A. Kohno, M. Hirose

{"title":"硅量子点的自组装及其在浮门存储器中的应用","authors":"S. Miyazaki, H. Murakami, M. Ikeda, E. Yoshida, A. Kohno, M. Hirose","doi":"10.1109/IMNC.1999.797488","DOIUrl":null,"url":null,"abstract":"In this paper, we describe a formation mechanism of nanometer Si dots on thermally-grown SiO/sub 2/ during LPCVD using SiH/sub 4/. And also, for MOS devices with nanometer Si dots as a floating gate, we demonstrate the memory operation due to electron charging to the dots at room temperature.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"84 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Self-assembling of silicon quantum dots and its application to floating gate memory\",\"authors\":\"S. Miyazaki, H. Murakami, M. Ikeda, E. Yoshida, A. Kohno, M. Hirose\",\"doi\":\"10.1109/IMNC.1999.797488\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we describe a formation mechanism of nanometer Si dots on thermally-grown SiO/sub 2/ during LPCVD using SiH/sub 4/. And also, for MOS devices with nanometer Si dots as a floating gate, we demonstrate the memory operation due to electron charging to the dots at room temperature.\",\"PeriodicalId\":120440,\"journal\":{\"name\":\"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference\",\"volume\":\"84 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMNC.1999.797488\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMNC.1999.797488","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文描述了在SiH/ sub4 / LPCVD过程中，热生长SiO/ sub2 /上纳米Si点的形成机理。此外，对于以纳米硅点作为浮栅的MOS器件，我们演示了由于电子在室温下对硅点充电而产生的记忆操作。

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Self-assembling of silicon quantum dots and its application to floating gate memory

In this paper, we describe a formation mechanism of nanometer Si dots on thermally-grown SiO/sub 2/ during LPCVD using SiH/sub 4/. And also, for MOS devices with nanometer Si dots as a floating gate, we demonstrate the memory operation due to electron charging to the dots at room temperature.

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Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference

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