Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference最新文献_第4页

Coulomb blockade phenomena in low-dimensional Si MOSFETs fabricated using focused-ion beam implantation 聚焦离子束注入制备低维Si mosfet中的库仑阻塞现象

Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797509

H. Kondo, S. Baba, K. Izumikawa, M. Sakurai, S. Zaima, Y. Yasuda

引用次数: 0

Progress in ArF single-layer resists ArF单层抗药的进展

Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797483

S. Takechi, A. Otoguro, T. Arita

引用次数: 0

The effect of mixing development method on CD uniformity 混合显影方式对CD均匀性的影响

Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797524

H. Nakamura, T. Ema, K. Hayasaki, S. Ito, K. Okumura

引用次数: 3

Control of initial layer for low temperature and high deposition rate polycrystalline silicon film formation process 控制初始层为低温高沉积速率多晶硅薄膜的形成过程

Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797552

K. Murata, M. Hori, T. Goto

引用次数: 0

Self-organized formation of widegap II-VI quantum structures and their optical properties 宽间隙II-VI量子结构的自组织形成及其光学性质

Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797455

T. Yao

引用次数: 0

Effects of hydrogen on the formation of SiGe/Si heterostructures 氢对SiGe/Si异质结构形成的影响

Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797551

Y. Yasuda, M. Okada

引用次数: 0

Change in optical properties of sapphire substrates by co-implantation of high-energy Zn and O ions 高能Zn和O离子共注入对蓝宝石衬底光学性能的影响

Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797520

S. Nakao, M. Ikeyama, T. Mizota, H. Niwa, K. Saitoh, Y. Miyagawa, S. Miyagawa, M. Tazawa, Ping Jin

{"title":"Change in optical properties of sapphire substrates by co-implantation of high-energy Zn and O ions","authors":"S. Nakao, M. Ikeyama, T. Mizota, H. Niwa, K. Saitoh, Y. Miyagawa, S. Miyagawa, M. Tazawa, Ping Jin","doi":"10.1109/IMNC.1999.797520","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797520","url":null,"abstract":"Ion implantation technique is a convenient way to form nano-particles into host materials. Moreover, there is a possibility to form oxide compound nano-particles by way of co-implantation of metal and oxygen ions. However, there are few reports on the formation of metal oxide nano-particles by way of co-implantation. On the other hand, ZnO is a semiconductor materials with wide and direct band gap, and their nano-crystals have attracted much attention because they could be applicable for optical devices showing blue luminescence. Moreover, it is known that ZnO films can be grown epitaxially on sapphire substrates. By analogy, it is presumably considered that ZnO nano-particles are also grown with orientation relation of sapphire substrates. The aim of this study is to form ZnO nano-particles by way of coimplantation of Zn and O ions into host materials. In this experiments, for the first attempt, Zn and O ions were co-implanted into sapphire substrates, and the change in their optical properties were examined.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133184334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

System LSI; the engine of the semiconductor industry 系统大规模集成电路;半导体产业的引擎

Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797447

F. Nakamura

引用次数: 1

0.32 /spl mu/m pitch on-gird random line pattern formation by dense dummy pattern and double exposure in KrF wavelength 在KrF波长下，通过密集虚拟模式和双重曝光形成0.32 /spl mu/m间距的网上随机线模式

Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797495

S. Nakao, K. Tsujita, I. Arimoto, W. Wakamiya

引用次数: 0

Low energy e-beam proximity lithography (LEEPL) 低能电子束接近光刻(LEEPL)

Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI: 10.1109/IMNC.1999.797462

T. Utsumi

{"title":"Low energy e-beam proximity lithography (LEEPL)","authors":"T. Utsumi","doi":"10.1109/IMNC.1999.797462","DOIUrl":"https://doi.org/10.1109/IMNC.1999.797462","url":null,"abstract":"Low energy e-beam proximity lithography (LEEPL) is proposed for integrated circuit lithography for the minimum feature size less than 0.1 /spl mu/m. This e-beam lithography is similar to optical proximity lithography except that photons are replaced by low energy electrons. Our new concept is based on an e-beam of 2 kV instead of 10 kV which has been used in early 80s by IBM. The great advantage of a low energy e-beam is that one can use 0.5 /spl mu/m thick silicon membrane mask without an absorbing metal layer of high atomic number. This thickness is sufficiently thin enough to fabricate Si stencil mask with feature size less than O. 1 /spl mu/m. Further more it is sufficiently thick to conduct heat away to peripheral bulk to keep the mask temperature acceptably low and sufficiently strong enough to support a few cm square membrane area. To write VLSI pattern on this mask membrane does not requires OPC (optical proximity correction), PSM (phase shift mask feature) and PEC (proximity effect correction) as in the case of advanced photo masks. The residual mask distortion caused by both stress relief during the mask fabrication and the framing the mask can be corrected by a fine tuning deflector built in the e-beam column. For mask heating distortion due to the e-beam irradiation, we estimate maximum lateral distortion as 10 nm at the power input of 6 mW for 1 cmx1 cm mask area. This input power corresponds to 3 /spl mu/A of the beam current and it has a power of exposing 120 wafers of 12 inch diameter per hour at an exposure dose of 0.2 /spl mu/C/cm/sup 2/. This exposure dose corresponds to the resist sensitivity of 1 /spl mu/C/cm/sup 2/ at 10 kV, which is typical for this type of application.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115733118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0