H. Kondo, S. Baba, K. Izumikawa, M. Sakurai, S. Zaima, Y. Yasuda
{"title":"聚焦离子束注入制备低维Si mosfet中的库仑阻塞现象","authors":"H. Kondo, S. Baba, K. Izumikawa, M. Sakurai, S. Zaima, Y. Yasuda","doi":"10.1109/IMNC.1999.797509","DOIUrl":null,"url":null,"abstract":"We have investigated Coulomb blockade phenomena in low-dimensional Si metal-oxide-semiconductor field-effect-transistors (MOSFETs) with the very small length and very narrow width of channel regions, which are fabricated using e-beam lithography, dry etching and focused ion beam (FIB) implantation. Coulomb blockade phenomena have been found in Si nano-wires and narrow channel Si MOSFETs. In our previous study, the conduction mechanism and Coulomb blockade phenomena in one-dimensional p-type Si wires formed by FIB implantation has been reported. In the present study, we have successfully fabricated low-dimensional p-channel Si MOSFETs, whose source/drain regions with a width of 100 nm are formed by selective FIB implantation. Coulomb blockade phenomena and magnetoresistance are examined using the sample, as a function of channel length.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"106 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Coulomb blockade phenomena in low-dimensional Si MOSFETs fabricated using focused-ion beam implantation\",\"authors\":\"H. Kondo, S. Baba, K. Izumikawa, M. Sakurai, S. Zaima, Y. Yasuda\",\"doi\":\"10.1109/IMNC.1999.797509\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have investigated Coulomb blockade phenomena in low-dimensional Si metal-oxide-semiconductor field-effect-transistors (MOSFETs) with the very small length and very narrow width of channel regions, which are fabricated using e-beam lithography, dry etching and focused ion beam (FIB) implantation. Coulomb blockade phenomena have been found in Si nano-wires and narrow channel Si MOSFETs. In our previous study, the conduction mechanism and Coulomb blockade phenomena in one-dimensional p-type Si wires formed by FIB implantation has been reported. In the present study, we have successfully fabricated low-dimensional p-channel Si MOSFETs, whose source/drain regions with a width of 100 nm are formed by selective FIB implantation. Coulomb blockade phenomena and magnetoresistance are examined using the sample, as a function of channel length.\",\"PeriodicalId\":120440,\"journal\":{\"name\":\"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference\",\"volume\":\"106 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMNC.1999.797509\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMNC.1999.797509","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Coulomb blockade phenomena in low-dimensional Si MOSFETs fabricated using focused-ion beam implantation
We have investigated Coulomb blockade phenomena in low-dimensional Si metal-oxide-semiconductor field-effect-transistors (MOSFETs) with the very small length and very narrow width of channel regions, which are fabricated using e-beam lithography, dry etching and focused ion beam (FIB) implantation. Coulomb blockade phenomena have been found in Si nano-wires and narrow channel Si MOSFETs. In our previous study, the conduction mechanism and Coulomb blockade phenomena in one-dimensional p-type Si wires formed by FIB implantation has been reported. In the present study, we have successfully fabricated low-dimensional p-channel Si MOSFETs, whose source/drain regions with a width of 100 nm are formed by selective FIB implantation. Coulomb blockade phenomena and magnetoresistance are examined using the sample, as a function of channel length.