Control of initial layer for low temperature and high deposition rate polycrystalline silicon film formation process

Abstract

In this study, the two step growth (TSG) method has been demonstrated to satisfy thin interface layer, the high crystallinity and high deposition rate of poly-Si film, at the same time. In the TSG, firstly the seed layer was formed without charged species, that is, with neutral species. Then, the poly-Si film was subsequently grown on the seed layer with charged species. The effects of ion bombardment on the nucleation of poly-Si films at the initial growth stage are intensively discussed.