氢对SiGe/Si异质结构形成的影响

Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI:10.1109/IMNC.1999.797551

Y. Yasuda, M. Okada

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摘要

本文综述和讨论了用GeH/sub 4/和Si/sub 2/H/sub 6/气源分子束外延(GSMBE)在Ge/Si(100)上生长Ge原子表面偏析和氢原子表面活性剂效应的研究结果。通过反射高能电子衍射(RHEED)的强度振荡周期，原位观察了硅覆盖层的逐层生长速率。

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Effects of hydrogen on the formation of SiGe/Si heterostructures

In this report, we review and discuss our results obtained on the surface segregation of Ge atoms and surfactant effects of hydrogen atoms in Si overlayer growth on Ge/Si(100) by gas-source molecular beam epitaxy (GSMBE) using GeH/sub 4/ and Si/sub 2/H/sub 6/. The layer-by-layer growth rate of the Si overlayers was observed in-situ by reflection high-energy electron diffraction (RHEED) intensity oscillation periods.

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Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference

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