0.32 /spl mu/m pitch on-gird random line pattern formation by dense dummy pattern and double exposure in KrF wavelength

S. Nakao, K. Tsujita, I. Arimoto, W. Wakamiya
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引用次数: 0

Abstract

0.32 /spl mu/m pitch on-grid random line pattern formation by double exposure is proposed based on optical image calculations. For first exposure, mask patterns consist with designed patterns and dummy patterns, which are laid out at all on-grid positions with the pitch of 0.32 /spl mu/m, and attenuated phase shift mask and annular illumination are applied. The imaging performance is significantly enhanced because all patterns in the mask are categorized "dense" with the same pitch. The mask pattern for the second exposure is simply generated from the designed pattern with resizing by appropriate amount. The pattern size in this mask becomes much larger than that in the first exposure mask. Consequently, large exposure latitude can be obtained by conventional exposure method. As a result, the 0.32 /spl mu/m pitch on-grid random line patterns are formed with DOF larger than 0.6 /spl mu/m in KrF wavelength.
在KrF波长下,通过密集虚拟模式和双重曝光形成0.32 /spl mu/m间距的网上随机线模式
在光学图像计算的基础上,提出了利用双曝光法形成0.32 /spl mu/m间距的网格上随机线模式。首次曝光时,掩模图案为设计图案和虚拟图案,在栅格上的所有位置布置,间距为0.32 /spl mu/m,使用衰减相移掩模和环形照明。由于掩模中的所有图案都被分类为具有相同间距的“密集”,因此成像性能显着增强。第二次曝光的掩模图案是简单地从设计的图案中产生的,并适当地调整大小。这个掩模中的图案尺寸比第一次曝光掩模中的图案尺寸大得多。因此,采用常规曝光方法可以获得较大的曝光纬度。结果表明,在KrF波长上形成了间距为0.32 /spl mu/m且DOF大于0.6 /spl mu/m的网格上随机线模式。
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