Effects of hydrogen on the formation of SiGe/Si heterostructures

Abstract

In this report, we review and discuss our results obtained on the surface segregation of Ge atoms and surfactant effects of hydrogen atoms in Si overlayer growth on Ge/Si(100) by gas-source molecular beam epitaxy (GSMBE) using GeH/sub 4/ and Si/sub 2/H/sub 6/. The layer-by-layer growth rate of the Si overlayers was observed in-situ by reflection high-energy electron diffraction (RHEED) intensity oscillation periods.