100kv电子束写入时薄x射线掩模衬底上的能量强度分布

Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI:10.1109/IMNC.1999.797497

S. Aya, T. Murakami, K. Kise, K. Kitamura, H. Yabe, K. Marumoto, S. Safoh

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引用次数: 0

摘要

本文采用点曝光和线曝光相结合的方法，对100 kV电子束写入中薄x射线掩模上的能量强度分布进行了评价。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Energy intensity distribution on thinned X-ray mask substrate in 100 kV electron beam writing

In this work the authors have evaluated the energy intensity distributions on thinned x-ray masks by the combination of the dot exposure and line exposure methods in 100 kV electron beam writing.

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来源期刊

Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference

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