Recent progress and future developments in EB mask writing for X-ray lithography

Abstract

Proximity X-ray lithography is one of the most promising candidate for mass production of the next generation ULSI devices. Among the key technologies of proximity X-ray lithography, fine and precise X-ray mask fabrication is most important issue. According to SIA Roadmap high-accurate image placement and CD control within 10 nm of X-ray mask are required for 0.1-/spl mu/m ULSI device fabrication. Therefore a great deal of developments should be achieved for X-ray mask fabrication which was contained mask materials and mask-fabrication processes including pattern delineation using electron-beam (EB) writer. Especially improvement in EB mask writing is indispensable for high-accurate image placement and CD control. In this paper, recent progress and future developments in EB mask writing for X-ray lithography are described.