H. Yamashita, S. Manako, E. Nomura, K. Nakajima, H. Nozue
{"title":"散射模板掩模中掩模散射电子的空间分布","authors":"H. Yamashita, S. Manako, E. Nomura, K. Nakajima, H. Nozue","doi":"10.1109/IMNC.1999.797461","DOIUrl":null,"url":null,"abstract":"Electron-beam (EB) projection methods, such as SCALPEL and PREVAIL are among the candidates for next generation lithography. In these methods, EB masks are used to gain high throughput of the exposure systems. Absorber or scatterer combining with opening or membrane of those masks are structured to produce an image contrast on the wafer.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Spatial distribution of mask-scattered electrons through scattering stencil mask\",\"authors\":\"H. Yamashita, S. Manako, E. Nomura, K. Nakajima, H. Nozue\",\"doi\":\"10.1109/IMNC.1999.797461\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electron-beam (EB) projection methods, such as SCALPEL and PREVAIL are among the candidates for next generation lithography. In these methods, EB masks are used to gain high throughput of the exposure systems. Absorber or scatterer combining with opening or membrane of those masks are structured to produce an image contrast on the wafer.\",\"PeriodicalId\":120440,\"journal\":{\"name\":\"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMNC.1999.797461\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMNC.1999.797461","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Spatial distribution of mask-scattered electrons through scattering stencil mask
Electron-beam (EB) projection methods, such as SCALPEL and PREVAIL are among the candidates for next generation lithography. In these methods, EB masks are used to gain high throughput of the exposure systems. Absorber or scatterer combining with opening or membrane of those masks are structured to produce an image contrast on the wafer.