In situ monitoring of semiconductor processes using synchrotron radiation [growth and cleaning]

Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI:10.1109/IMNC.1999.797531

Y. Takaku

引用次数: 0

Abstract

In this review paper, discussion is focused on the in-situ monitoring of gas source molecular beam epitaxy (GSMBE) and photon-induced hydrogen removal on Si surfaces using synchrotron radiation photoelectron spectroscopy.

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使用同步辐射的半导体工艺现场监测[生长和清洗]

本文主要讨论了利用同步辐射光电子能谱技术在Si表面进行气源分子束外延(GSMBE)和光子诱导除氢的现场监测。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference

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