High density metal dot arrays formed by electron beam induced nucleation method

Artificial site control of quantum dots formed by self-assemble like processes is very attractive. Previously, we proposed the method in which surface of an epitaxial CaF/sub 2/ film was modified by focused electron beam exposure and a Ga droplet grew on the each exposed site by preferential nucleation of migrating Ga atoms. In this paper, we improved the process to obtain high resolution, and obtained uniform and high density Ga dot arrays where diameter of each dots was 10nm and period was less than 20nm were formed.