采用电子束光刻技术的横向硅场发射装置

Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1900-01-01 DOI:10.1109/imnc.1999.797513

Hyungcheol Shin, Sun-A Yang, Taekeun Hwang, Sangyeon Han, Jongho Lee, Yjong Duk Lee

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引用次数: 1

摘要

为了实现场发射真空微电子器件的低电压、高速度运行，需要有锋利的阴极尖端和极小的阴极与阳极间距。在这项工作中，利用高分辨率电子束(EB)光刻结合反应离子蚀刻(RIE)技术制造了侧向场发射二极管和三极管。介绍了所制备器件的特点。

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Lateral silicon field emission devices using electron beam lithography

For low voltage and high speed operation of field emission vacuum microelectronic devices, sharp cathode tips and minimal cathode to anode spacing are needed. In this work, lateral field emission diodes and triodes have been fabricated using high-resolution electron beam (EB) lithography in combination with reactive ion etching (RIE) techniques. The characteristics of the fabricated devices are presented.

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Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference

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