{"title":"Fabrication of periodic Si nanocages by lithographic anodization","authors":"T. Baba, M. Hashimoto, T. Nakagawa, N. Koshida","doi":"10.1109/IMNC.1999.797506","DOIUrl":null,"url":null,"abstract":"It has been shown that periodic Si nanostructures with nanometer-scale pores can be formed by controlled anodization of heavily doped n-type Si wafer. We have also studied a nanofabrication process by dual-functional refractory metal oxide (MoO/sub 3/ and WO/sub 3/) resists for a Ga/sup +/-focused ion beam (FIB) exposure. In this paper, we demonstrate that controllability of periodic Si nanostructures formation can be enhanced by appropriate combination of the above two techniques.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"173 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMNC.1999.797506","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
It has been shown that periodic Si nanostructures with nanometer-scale pores can be formed by controlled anodization of heavily doped n-type Si wafer. We have also studied a nanofabrication process by dual-functional refractory metal oxide (MoO/sub 3/ and WO/sub 3/) resists for a Ga/sup +/-focused ion beam (FIB) exposure. In this paper, we demonstrate that controllability of periodic Si nanostructures formation can be enhanced by appropriate combination of the above two techniques.