0.12 /spl mu/m DRAM图形的KrF光刻成像特性

Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI:10.1109/IMNC.1999.797494

S. Nakao, K. Tsujita, I. Arimoto, W. Wakamiya

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引用次数: 0

摘要

通过光学图像计算，研究了KrF光刻技术形成0.12 /spl mu/m DRAM图案的可行性。在高数值孔径(NA)为0.75的情况下，采用针对特定模式优化的改进照明和衰减相移掩模(PSM)，可实现高达/spl sim/0.8 /spl mu/m的焦深(DOF)。然而，由于透镜像差，图像质量明显下降。因此，利用KrF光刻技术实现0.12 /spl μ m的DRAM，发展低像差透镜是必然的。

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Imaging characteristics of 0.12 /spl mu/m DRAM pattern by KrF lithography

Feasibility of 0.12 /spl mu/m DRAM pattern formation by KrF lithography is investigated by optical image calculations. Using modified illumination optimized for the specific pattern and attenuating phase shift mask (PSM), depth of focus (DOF) can be achieved up to /spl sim/0.8 /spl mu/m under high numerical aperture (NA) of 0.75. However, the image quality is significantly degraded by lens aberration. Accordingly, the development of low aberration lens is inevitable to realize 0.12 /spl mu/m DRAM by KrF lithography.

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Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference

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