光刻阳极氧化法制备周期硅纳米笼

Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI:10.1109/IMNC.1999.797506

T. Baba, M. Hashimoto, T. Nakagawa, N. Koshida

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引用次数: 0

摘要

结果表明，对重掺杂n型硅片进行可控阳极氧化处理，可以形成具有纳米级孔的周期性硅纳米结构。我们还研究了双功能难熔金属氧化物(MoO/sub - 3/和WO/sub - 3/)电阻在Ga/sup +/聚焦离子束(FIB)下的纳米加工工艺。在本文中，我们证明了上述两种技术的适当结合可以增强周期性硅纳米结构形成的可控性。

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Fabrication of periodic Si nanocages by lithographic anodization

It has been shown that periodic Si nanostructures with nanometer-scale pores can be formed by controlled anodization of heavily doped n-type Si wafer. We have also studied a nanofabrication process by dual-functional refractory metal oxide (MoO/sub 3/ and WO/sub 3/) resists for a Ga/sup +/-focused ion beam (FIB) exposure. In this paper, we demonstrate that controllability of periodic Si nanostructures formation can be enhanced by appropriate combination of the above two techniques.

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Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference

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