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International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM最新文献

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An Integrated Failure Analysis Environment: An Experimental Model For Research And Development 集成故障分析环境:研究与开发的实验模型
International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM Pub Date : 1994-06-21 DOI: 10.1109/ISSM.1994.729440
P. Marcoux, T. Cass, R. R. Clark, D. M. Hayes, Sau-Lan Ng, Y. Nishi, B. Phillips
{"title":"An Integrated Failure Analysis Environment: An Experimental Model For Research And Development","authors":"P. Marcoux, T. Cass, R. R. Clark, D. M. Hayes, Sau-Lan Ng, Y. Nishi, B. Phillips","doi":"10.1109/ISSM.1994.729440","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729440","url":null,"abstract":"The development of advanced integrated circuit processes requires a methodology for efficient reduction of defect density. Our methodology integrates standard electrical tests, novel test data analyses, and stripback to determine the physical causes for electrical faults. The process of observing defects with an optical microscope or SEM was made accurate and rapid by a computer controlled stage. This paper describes application of this environment using selected examples from the development of a 0.6 um CMOS process.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125293071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Results Of An Implant Masking Integrated Workcall In A Development Facility 在开发设施中植入掩蔽集成工作调用的结果
International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM Pub Date : 1994-06-21 DOI: 10.1109/ISSM.1994.729418
R. Griffin, R. Guo, M. Slama
{"title":"Results Of An Implant Masking Integrated Workcall In A Development Facility","authors":"R. Griffin, R. Guo, M. Slama","doi":"10.1109/ISSM.1994.729418","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729418","url":null,"abstract":"Effects of equipment layout on wafer fab performance are discussed. The traditional wafer fab layout is known to industrial engineers as a job shop. The strength of the job shop system is excellent process flexibility. Job shop layouts also cause long cycle times, lesser quality, and poor communication between workers. A workcell based wafer fab addresses some of those weaknesses. This paper presents initial results of the implant masking workcell in a development fab.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116419720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Proposal For The Corrosive Gas Distribution System 腐蚀性气体分配系统的设计方案
International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM Pub Date : 1994-06-21 DOI: 10.1109/ISSM.1994.729446
E. Ozawa
{"title":"A Proposal For The Corrosive Gas Distribution System","authors":"E. Ozawa","doi":"10.1109/ISSM.1994.729446","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729446","url":null,"abstract":"Each failure has a unique cause. Main causes of failures in corrosive gas line are human error in gas handing, bad function of pressure regulator due to corrosion and the corrosion of materials around welding sites. If these problems can be eliminated from the corrosive gas line, we will be able to realize much safer and higher-quality gas line. Establishment of good purging procedure, the usage of low Mn 316L, local usage of high corrosion resistant materials like Hastelloy etc. are the suitable and cost effective counterplan for corrosion problems.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114638912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Defect Reduction Using Yield Management Test Structures 利用良率管理测试结构减少缺陷
International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM Pub Date : 1994-06-21 DOI: 10.1109/ISSM.1994.729442
H.M. Chou, C.C. Liu, C.J. Kuo, J.H. Hwang, N.W. Wu, M.C. Chang
{"title":"Defect Reduction Using Yield Management Test Structures","authors":"H.M. Chou, C.C. Liu, C.J. Kuo, J.H. Hwang, N.W. Wu, M.C. Chang","doi":"10.1109/ISSM.1994.729442","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729442","url":null,"abstract":"Design and applications of Yield Management test patterns on memory products have been reviewed. Evaluations are made for Y.M. patterns and conventional T.K. patterns in terms of their ability to faithfully point out process deviations/defects and to predict CP yield. It s assessed that Y.M. patterns are superior to T.K. patterns in terms of the previous criteria. Finally, design guidelines will be also discussed.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132386755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Many-Kinds Small-Amount Production In ASIC Factory 在ASIC工厂进行多种小批量生产
International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM Pub Date : 1994-06-21 DOI: 10.1109/ISSM.1994.729419
K. Hamashima
{"title":"Many-Kinds Small-Amount Production In ASIC Factory","authors":"K. Hamashima","doi":"10.1109/ISSM.1994.729419","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729419","url":null,"abstract":"With the recent diversified market needs, equipment manufacturers come to demand many-kinds small-amount devices with high performance and short delivery time in order to accomplish the desired product specification. To cope with the demand, enormous amounts of control items are required in the production lines of ASIC factories where customers, quantity, and delivery are set for each product. Controlling these items only by man-power is almost impossible. To meet the demand from equipment manufacturers, it is necessary to construct an integrated production support system, including design and mask/reticle control.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114348365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Minienvironment Technology And Automation Systems For Next Generation IC Fabs 新一代集成电路厂的微环境技术和自动化系统
International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM Pub Date : 1994-06-21 DOI: 10.1109/ISSM.1994.729448
M. Brain, S. Abuzeid
{"title":"Minienvironment Technology And Automation Systems For Next Generation IC Fabs","authors":"M. Brain, S. Abuzeid","doi":"10.1109/ISSM.1994.729448","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729448","url":null,"abstract":"The integration of Minienvironment and SMIF Systems into IC fabrication provides new automation requirements and design possibilities. A scenario for an optimized, integrated Minienvironment and SMIF-based Automated facility is described and the benefits are analyzed. Recent data is presented comparing particulate contamination within various conventional open and minienvironment-based facilities worldwide.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123715604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Measurement Of Adsorbed Moisture Concentration On Various Kinds Of Solid Surfaces By Using Anhydrous Hydrogen Fluoride 用无水氟化氢测定各种固体表面吸附的水分浓度
International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM Pub Date : 1994-06-21 DOI: 10.1109/ISSM.1994.729458
H. Izumi, Y. Nakagawa, S. Miyoshi, T. Ohmi
{"title":"Measurement Of Adsorbed Moisture Concentration On Various Kinds Of Solid Surfaces By Using Anhydrous Hydrogen Fluoride","authors":"H. Izumi, Y. Nakagawa, S. Miyoshi, T. Ohmi","doi":"10.1109/ISSM.1994.729458","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729458","url":null,"abstract":"We have studied a new measurement method of moisture molecule concentrations adsorbed on solid surface by using Anhydrous Hydrogen Fluoride(AHF) that was able to dissolve adsorbed moisture molecules and dissociate them to ions. After adsorbed moisture molecules on solid surface was dissolved into AHF, the amount of dissolved moisture were then determined by measuring the variation of electric conductivity of AHF. This new measurement method made it possible to measure the moisture molecule concentrations adsorbed on solid surfaces exposed to the atmosphere having high moisture concentrations. It has been found that the amount of adsorbed moisture molecule concentrations on solid surfaces in the atmosphere with 1% at 25 C is 2.5x1016 molecules/cm 2 in equilibrium.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127216095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Equipment Analysis And Wafer Parameter Prediction Using Real-Time Tool Data 利用实时工具数据进行设备分析和晶圆参数预测
International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM Pub Date : 1994-06-21 DOI: 10.1109/ISSM.1994.729439
S.F. Lee, C. Spanos
{"title":"Equipment Analysis And Wafer Parameter Prediction Using Real-Time Tool Data","authors":"S.F. Lee, C. Spanos","doi":"10.1109/ISSM.1994.729439","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729439","url":null,"abstract":"We propose a system which uses real-time equipment sensor signals to automatically detect and analyze semiconductor equipment faults, and evaluate the impact of the fault on the wafer parameters. The system, which has been applied on plasma processes, consists of three modules: (1) fault detection, (2) fault analysis, and (3) prediction of final wafer parameters such as etch rate, uniformity, selectivity, and anisotropy.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"341 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132031445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Particle-Growth Caused By Film Deposition In VLSI Manufacturing Process 超大规模集成电路制造过程中薄膜沉积引起的颗粒生长
International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM Pub Date : 1994-06-21 DOI: 10.1109/ISSM.1994.729433
Y. Takii, Y. Miyoshi, Y. Horofuji
{"title":"Particle-Growth Caused By Film Deposition In VLSI Manufacturing Process","authors":"Y. Takii, Y. Miyoshi, Y. Horofuji","doi":"10.1109/ISSM.1994.729433","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729433","url":null,"abstract":"A new method for forming imaginary-particles with various sizes and materials was developed, and particle growth caused by film deposition in VLSI manufacturing process was investigated by using imaginary-particles. Consequently, particle growth was strongly dependent on film thickness and step-coverage decided by film deposition method, and the study with imaginary-particles was very effective to explicate the particle growth mechanism.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130873058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Safety Measures And Their Cost Reduction Of Semiconductor Equipment 半导体设备的安全措施及其成本降低
International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM Pub Date : 1994-06-21 DOI: 10.1109/ISSM.1994.729436
T. Uchino, H. Shida
{"title":"Safety Measures And Their Cost Reduction Of Semiconductor Equipment","authors":"T. Uchino, H. Shida","doi":"10.1109/ISSM.1994.729436","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729436","url":null,"abstract":"Cost reduction of semiconductor equipment by streamlining safety measures is discussed. Unification of equipment specifications, elimination of over-specification, and maximum use of vendor options are the major guidelines for cost reduction. Consequently the average equipment price has decreased by 20%.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125448962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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