P. Marcoux, T. Cass, R. R. Clark, D. M. Hayes, Sau-Lan Ng, Y. Nishi, B. Phillips
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引用次数: 0
摘要
先进集成电路工艺的发展需要一种有效降低缺陷密度的方法。我们的方法集成了标准的电气测试,新颖的测试数据分析和回溯,以确定电气故障的物理原因。在计算机控制台上,利用光学显微镜或扫描电子显微镜对缺陷进行精确、快速的观察。本文介绍了该环境的应用,并选择了开发0.6 um CMOS工艺的例子。
An Integrated Failure Analysis Environment: An Experimental Model For Research And Development
The development of advanced integrated circuit processes requires a methodology for efficient reduction of defect density. Our methodology integrates standard electrical tests, novel test data analyses, and stripback to determine the physical causes for electrical faults. The process of observing defects with an optical microscope or SEM was made accurate and rapid by a computer controlled stage. This paper describes application of this environment using selected examples from the development of a 0.6 um CMOS process.