超大规模集成电路制造过程中薄膜沉积引起的颗粒生长

International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM Pub Date : 1994-06-21 DOI:10.1109/ISSM.1994.729433

Y. Takii, Y. Miyoshi, Y. Horofuji

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引用次数: 0

摘要

提出了一种不同尺寸、不同材料的虚粒子形成新方法，并利用虚粒子研究了超大规模集成电路制造过程中薄膜沉积引起的粒子生长问题。因此，颗粒的生长很大程度上取决于薄膜沉积方法所决定的膜厚和台阶覆盖率，而虚拟颗粒的研究对于解释颗粒的生长机制是非常有效的。

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Particle-Growth Caused By Film Deposition In VLSI Manufacturing Process

A new method for forming imaginary-particles with various sizes and materials was developed, and particle growth caused by film deposition in VLSI manufacturing process was investigated by using imaginary-particles. Consequently, particle growth was strongly dependent on film thickness and step-coverage decided by film deposition method, and the study with imaginary-particles was very effective to explicate the particle growth mechanism.

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International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM

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