An Integrated Failure Analysis Environment: An Experimental Model For Research And Development

P. Marcoux, T. Cass, R. R. Clark, D. M. Hayes, Sau-Lan Ng, Y. Nishi, B. Phillips
{"title":"An Integrated Failure Analysis Environment: An Experimental Model For Research And Development","authors":"P. Marcoux, T. Cass, R. R. Clark, D. M. Hayes, Sau-Lan Ng, Y. Nishi, B. Phillips","doi":"10.1109/ISSM.1994.729440","DOIUrl":null,"url":null,"abstract":"The development of advanced integrated circuit processes requires a methodology for efficient reduction of defect density. Our methodology integrates standard electrical tests, novel test data analyses, and stripback to determine the physical causes for electrical faults. The process of observing defects with an optical microscope or SEM was made accurate and rapid by a computer controlled stage. This paper describes application of this environment using selected examples from the development of a 0.6 um CMOS process.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.1994.729440","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The development of advanced integrated circuit processes requires a methodology for efficient reduction of defect density. Our methodology integrates standard electrical tests, novel test data analyses, and stripback to determine the physical causes for electrical faults. The process of observing defects with an optical microscope or SEM was made accurate and rapid by a computer controlled stage. This paper describes application of this environment using selected examples from the development of a 0.6 um CMOS process.
集成故障分析环境:研究与开发的实验模型
先进集成电路工艺的发展需要一种有效降低缺陷密度的方法。我们的方法集成了标准的电气测试,新颖的测试数据分析和回溯,以确定电气故障的物理原因。在计算机控制台上,利用光学显微镜或扫描电子显微镜对缺陷进行精确、快速的观察。本文介绍了该环境的应用,并选择了开发0.6 um CMOS工艺的例子。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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