International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM最新文献

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Issues Of Wet Cleaning In ULSI Process ULSI工艺中湿法清洗的问题
T. Ajioka, Y. Mizokami
{"title":"Issues Of Wet Cleaning In ULSI Process","authors":"T. Ajioka, Y. Mizokami","doi":"10.1109/ISSM.1994.729430","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729430","url":null,"abstract":"Wet cleaning for actual LSI processes is discussed. Particle elimination efficiency is limited by suppression of device degradation and cleaning is invalid for the particles generated during etching and film formation. Particle reduction depends on particle characteristics, i.e. the sticking force and the chemical structure of the particles. Metallic contamination on wafers, dependent on a kind of solutions and the concentration in a solution, degrades TDDB characteristics and recombination lifetime. Although the lifetime degradation is a serious problem for ULSI, the damage by etching and by ion implantation causes the lifetime lowering rather than metallic contamination.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131821016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Eouipment Modeling: A Tool To Cost Reduction 设备建模:降低成本的工具
N. S. Alvi
{"title":"Eouipment Modeling: A Tool To Cost Reduction","authors":"N. S. Alvi","doi":"10.1109/ISSM.1994.729437","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729437","url":null,"abstract":"Complexities in manufacturing and needs for cost containment have spawned a drive to develop accurate and efficient modeling techniques. These range from addressing market scenarios and factory performance at the strategic level to the performance of individual equipment at the tactical level, such as throughput, clustering and reliability. The modeling of individual equipment and process is an important link in the overall drive to comprehend and reduce cost factors at the factory level. This paper describes the application of analytical and computational modeling techniques used to optimize process and equipment design of furnace, chemical vapor deposition (CVD), rapid thermal processing (RTP), and plasma etch and deposition equipment.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114799041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Silicon Technology Roadmap To 2010 硅技术路线图到2010年
T. Seidel
{"title":"Silicon Technology Roadmap To 2010","authors":"T. Seidel","doi":"10.1109/ISSM.1994.729413","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729413","url":null,"abstract":"An analysis of the Silicon Technology Roadmap out to 2010 is presented. Partnering (this conference theme) is fundamental to the success of meeting the Roadmap goals. Escalating cost has been globally identified as a common enemy, key partnership opportunities exist in the areas of lithography, wafer contamination and environmental technologies. These opportunities are being developed against a background of adverse trade policies.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127286394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Automated In-line Monitoring Of Chemical Assay In Wafer Cleaning Solution 晶圆清洗溶液中化学分析的自动在线监测
S. Takaiwa, T. Funabashi, A. Yoshii, T. Iwata
{"title":"Automated In-line Monitoring Of Chemical Assay In Wafer Cleaning Solution","authors":"S. Takaiwa, T. Funabashi, A. Yoshii, T. Iwata","doi":"10.1109/ISSM.1994.729453","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729453","url":null,"abstract":"The continuous monitoring equipment for the chemical assay of these cleaning solution has been developed. These assay are determined by the electrochemical sensing probes such called as ion selective electrodes. With this method, it is able to measure the concentration of components in the solution by the sensitivity of 0. 1 -1 g/L.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133044857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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