{"title":"Reducing Electrostatic Related Defects In Photolithography","authors":"A. Steinman","doi":"10.1109/ISSM.1994.729449","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729449","url":null,"abstract":"Failure to control static charge creates problems in a variety of cleanroom environments. This is particularly apparent in photolithography areas where both the product wafers and the reticles are at risk to the effects of static charge. This paper presents an introduction to static charge control in photolithography areas and the use of air ionization for this purpose.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122609949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Nurani, R. Akella, A. Strojwas, R. Wallace, M. McIntyre, J. Shields, I. Emami
{"title":"Development Of An Optimal Sampling Strategy For Wafer Inspection","authors":"R. Nurani, R. Akella, A. Strojwas, R. Wallace, M. McIntyre, J. Shields, I. Emami","doi":"10.1109/ISSM.1994.729441","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729441","url":null,"abstract":"This paper presents a methodology for the development of an optimal sampling strategy for defect inspection, which is crucial for yield management of state-of-the-art technologies. This requires understanding of the defect-yield relationship and yield reducing process drift models. Further, the sampling plan is based on the trade-offs between the costs of sampling and of defective dies. Our methodology is demonstrated using data from different fabs.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133851669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Reducing the Cost of Ownership Through Investing in Process Improvements: The Case of Final Test","authors":"R. McIvor, J. Martin, H. Matsuo, J. Ng","doi":"10.1109/ISSM.1994.729424","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729424","url":null,"abstract":"","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"158 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122059237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Corrosion-Free Stainless Steel Tube Welding","authors":"S. Miyoshi, Y. Shirai, M. Narazaki, T. Ohmi","doi":"10.1109/ISSM.1994.729460","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729460","url":null,"abstract":"In order to solve corrosion problems in the welded areas due to corrosive gases, we have been working on developing an ultraclean welding technology applied to high speed single path narrow bead welding with using a low Mn contents of the base material. Also we have obtained the Perfect Cr2O3 passive film on the welding point by using a supper ferritic stainless steel. Therefore, the corrosion resistance around the welded areas was drastically improved in comparison with the conventional welding method.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125206858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Influence Of Particles/Impurity Metals In RCA Cleaning Solutions On Surface Contamination.","authors":"M. Watanabe, I. Kanno, T. Ohmori","doi":"10.1109/ISSM.1994.729431","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729431","url":null,"abstract":"We investigated how the particles and the metals in RCA cleaning solutions contaminate wafer surfaces in 64M DRAM development process. The most dominant factor to keep the cleanliness of wafer in present process is the overall cleanliness of the system, rather than the purity of chemicals itself. The residual contamination on wafers can be kept below detection limits by optimizing the cleaning process and its operation parameters. Therefore the requirements of quality levels for the fed chemicals are supposed not so high for the present 64M DRAM development process.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125379411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The Cost Effective Approach In A Mixed Product Manufacturing","authors":"K. Iida","doi":"10.1109/ISSM.1994.729447","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729447","url":null,"abstract":"With recent semiconductor industries, as integration of circuit become much larger the investment to wafer fabrication become enormous. In the other word, the semiconductor industry is not so profitable industry as it was. In order to make profit in a most advanced LSI factory, we must increase the productivity to its highest point, at the most minimum facility investment. This paper describes the standardization of process conditions, the manufacturing equipments layout and the FAB operators employment as approaches to higher productivity.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128572457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"CIMS For Cost Effective Manufacturing","authors":"O. Matsuoka","doi":"10.1109/ISSM.1994.729421","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729421","url":null,"abstract":"The semiconductor business goes ahead with a large scale, a globalization and an acceleration of business speed by a shortening life of the products. The aim of the latest CIMS is not only to improve the productivity of the factories by automation, but also to realize the higher efficiency and the customer satisfaction (CS) by means of the total optimizatim from design through sales. The details of CIMS at NEC are described with some examples.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124550188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"An Effective Method For Developing Process Equipment With CFD Simulation","authors":"T. Komiya","doi":"10.1109/ISSM.1994.729438","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729438","url":null,"abstract":"The timely supply of new equipment with high performance/cost is being assisted, because of the recent development of simulation. In particular, computational fluid dynamics(CFD) has become an effective method for optimizing the design parameters of semiconductor production equipment without many experimental trials, by modeling fluid flow, heat transfer, and chemical reaction in the chamber. We present such examples of application as the etcher, the furnace, the metal CVD, the wet station, and the wafer prober, etc.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121646520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Quality Control And Diagnostic System For LSI Fabrication","authors":"M. Sakata, S. Ishikawa, I. Miyazaki, T. Okabe","doi":"10.1109/ISSM.1994.729451","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729451","url":null,"abstract":"Improving initial yield is one way to overcome the ever competitive market of semiconductors. To accomplish this, analyzing particle/pattern defects is a method in finding a countermeasure. We have developed a system, from controlling the master parameter setting, derive where and what the problem is. It gathers data from QC data; especially related to particles and pattern defects. This system is completely independent from other systems, thus enabling it to be used in any type of line(e.g. unautomated/automated, large/small.)","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134375849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design Optimization Of Gas Pumping System For Ultra Clean Reduced-Gas-Pressure Processing Equipment","authors":"N. Konishi, T. Shibata, T. Ohmi","doi":"10.1109/ISSM.1994.729459","DOIUrl":"https://doi.org/10.1109/ISSM.1994.729459","url":null,"abstract":"Impurity back diffusion through a UHV pump in reduced-gas-processing chambers has been experimentally studied. A large throughput of process gases severely degrades the main UHV pump capability in dragging impurities, resulting in the back diffusion of impurities to the processing chamber. Such degradation is greatly influenced by the pumping speed of the backing pump. However, we have found for the first time that the impurity level in the chamber can be made even lower than that for the best performance under UHV when the gas flow rate is optimized for the system. The scenario to the gas pumping system optimization is presented.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"58 34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133314977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}