RCA清洗液中颗粒/杂质金属对表面污染的影响。

International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM Pub Date : 1994-06-21 DOI:10.1109/ISSM.1994.729431

M. Watanabe, I. Kanno, T. Ohmori

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引用次数: 2

摘要

我们研究了在64M DRAM开发过程中，RCA清洁溶液中的颗粒和金属是如何污染晶圆表面的。在目前的工艺中，保持硅片清洁度的最主要因素是系统的整体清洁度，而不是化学品本身的纯度。通过优化清洗工艺和操作参数，可以将硅片上的残留污染物控制在检测限以下。因此，在目前64M DRAM的开发过程中，对进料化学品的质量要求不应该太高。

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Influence Of Particles/Impurity Metals In RCA Cleaning Solutions On Surface Contamination.

We investigated how the particles and the metals in RCA cleaning solutions contaminate wafer surfaces in 64M DRAM development process. The most dominant factor to keep the cleanliness of wafer in present process is the overall cleanliness of the system, rather than the purity of chemicals itself. The residual contamination on wafers can be kept below detection limits by optimizing the cleaning process and its operation parameters. Therefore the requirements of quality levels for the fed chemicals are supposed not so high for the present 64M DRAM development process.

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International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM

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