{"title":"利用实时工具数据进行设备分析和晶圆参数预测","authors":"S.F. Lee, C. Spanos","doi":"10.1109/ISSM.1994.729439","DOIUrl":null,"url":null,"abstract":"We propose a system which uses real-time equipment sensor signals to automatically detect and analyze semiconductor equipment faults, and evaluate the impact of the fault on the wafer parameters. The system, which has been applied on plasma processes, consists of three modules: (1) fault detection, (2) fault analysis, and (3) prediction of final wafer parameters such as etch rate, uniformity, selectivity, and anisotropy.","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"341 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Equipment Analysis And Wafer Parameter Prediction Using Real-Time Tool Data\",\"authors\":\"S.F. Lee, C. Spanos\",\"doi\":\"10.1109/ISSM.1994.729439\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose a system which uses real-time equipment sensor signals to automatically detect and analyze semiconductor equipment faults, and evaluate the impact of the fault on the wafer parameters. The system, which has been applied on plasma processes, consists of three modules: (1) fault detection, (2) fault analysis, and (3) prediction of final wafer parameters such as etch rate, uniformity, selectivity, and anisotropy.\",\"PeriodicalId\":114928,\"journal\":{\"name\":\"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM\",\"volume\":\"341 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSM.1994.729439\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.1994.729439","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Equipment Analysis And Wafer Parameter Prediction Using Real-Time Tool Data
We propose a system which uses real-time equipment sensor signals to automatically detect and analyze semiconductor equipment faults, and evaluate the impact of the fault on the wafer parameters. The system, which has been applied on plasma processes, consists of three modules: (1) fault detection, (2) fault analysis, and (3) prediction of final wafer parameters such as etch rate, uniformity, selectivity, and anisotropy.
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