IF 3.3 3区材料科学

Silicon Pub Date : 2025-07-12 DOI: 10.1007/s12633-025-03379-4

Abhishek Chauhan, Ashish Raman

{"title":"Design, Investigation and Performance Analysis of an Optimized Dopingless Nanosheet Field-Effect Transistor Based Biosensor (Bio-DLNSFET)","authors":"Abhishek Chauhan, Ashish Raman","doi":"10.1007/s12633-025-03379-4","DOIUrl":"10.1007/s12633-025-03379-4","url":null,"abstract":"<div>In this paper, a biosensor based on vertically stacked Dopingless Nanosheet FET (Bio-DLNSFET) is proposed and analyzed. The performance analysis of the proposed biosensor is carried out in terms of sensitivity and various analog/dc parameters. The device utilizes charge plasma technique to induce the charge carriers. A cavity is introduced under the gate region which shows good drain current (2.43E-05 A), low off current (1.33E-13 A), high Ion/Ioff ratio (1.83E + 08), lower SS (60.9 mV/Dec) and good sensitivity making it suitable for sensing applications. Further analysis is carried out by applying different types of biomolecules represented by their dielectric constants (k = 1, 2.1, 3.57, 8, 12 and 20). Biosensor shows good sensitivity and parametric variation for different biomolecules. Sensing ability of the biosensor is evaluated for different levels of biomolecules in the cavity. Biosensor shows detection of biomolecules from 50% of cavity filling. The effect of temperature along with positive and negative charge densities of biomolecules on the performance of the biosensor is further evaluated.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 12","pages":"2797 - 2813"},"PeriodicalIF":3.3,"publicationDate":"2025-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145073581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Engineering Zeolite Frameworks for Radiation Shielding: Interplay between Topological Density and Structural Compactness for Optimized Attenuation 用于辐射屏蔽的工程沸石框架：优化衰减的拓扑密度和结构紧凑性之间的相互作用

IF 3.3 3区材料科学

Silicon Pub Date : 2025-07-11 DOI: 10.1007/s12633-025-03376-7

Z. Y. Khattari

{"title":"Engineering Zeolite Frameworks for Radiation Shielding: Interplay between Topological Density and Structural Compactness for Optimized Attenuation","authors":"Z. Y. Khattari","doi":"10.1007/s12633-025-03376-7","DOIUrl":"10.1007/s12633-025-03376-7","url":null,"abstract":"<div>This study systematically evaluates the radiation shielding performance of silicon-based zeolite frameworks (FAU, LTA, CHA, AST, MOR, FER, RHO) by correlating their topological density (TD), structural compactness, and compositional parameters with photon attenuation metrics. The RHO framework emerges as the most effective shield, achieving exceptional MAC (47.914 cm2/g) and LAC (148.064 cm⁻1) values at 15 keV, attributed to its high density (ρ = 3.09 g/cm3), balanced topological parameters (TD₁₀ = 641, TD = 0.533), and moderate accessible volume (20.63%). Its superior performance is further underscored by the highest effective atomic number (Zeff = 40.82 at 15 keV), reflecting optimized photon interaction efficiency. In contrast, the AST framework, with low density (ρ = 0.217 g/cm3), excessive porosity (TD = 0.625, zero accessible volume), and poor atomic packing, exhibits the weakest attenuation (MAC = 6.488 cm2/g, LAC = 1.409 cm⁻1). The interplay of topological parameters reveals that intermediate TD values (e.g., RHO, FAU) enhance shielding by balancing atomic packing and density, while high porosity (e.g., AST) diminishes performance. Notably, RHO maintains its advantage at higher energies (e.g., 5.0 MeV: MAC = 0.034 cm2/g, LAC = 0.106 cm⁻1, Zeff = 17.03), whereas FAU’s moderate density (ρ = 0.388 g/cm3) and accessible volume (27.42%) make it suitable for multifunctional applications. These insights underscore the importance of harmonizing topological compactness, accessible volume, and density in designing zeolite-based shields, with RHO serving as a benchmark for high-performance radiation protection in nuclear and medical applications.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 12","pages":"2781 - 2796"},"PeriodicalIF":3.3,"publicationDate":"2025-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145073554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of Fe2O3 on Radiation Shielding, and Mechanical Properties of La2O3-SiO2-B2O3-MgO- Fe2O3 Glasses Fe2O3对La2O3-SiO2-B2O3-MgO- Fe2O3玻璃辐射屏蔽及力学性能的影响

IF 3.3 3区材料科学

Silicon Pub Date : 2025-07-10 DOI: 10.1007/s12633-025-03373-w

Dalal Abdullah Aloraini, Aljawhara Almuqrin, Badriah Albarzan, E. A. Abdel Wahab, Kh. S. Shaaban

{"title":"Influence of Fe2O3 on Radiation Shielding, and Mechanical Properties of La2O3-SiO2-B2O3-MgO- Fe2O3 Glasses","authors":"Dalal Abdullah Aloraini, Aljawhara Almuqrin, Badriah Albarzan, E. A. Abdel Wahab, Kh. S. Shaaban","doi":"10.1007/s12633-025-03373-w","DOIUrl":"10.1007/s12633-025-03373-w","url":null,"abstract":"<div>Glass samples with the formula 75B2O3-10SiO2-5La2O3-(10-x)MgO-xFe2O3, (0 ≤ x ≤ 5 mol%), were manufactured to investigate the effect of substituting Fe2O3 for MgO. The density increases from 3.19 to 4.32 g/cm3 while the molar volume decreases from 24.62 to 19.56 m3/mol. Mechanical properties, including longitudinal (VL) and shear (VT) wave velocities and elastic moduli, improved consistently with higher Fe2O3 content. In terms of γ-radiation shielding, increasing Fe2O3 content resulted in higher linear attenuation coefficient (LAC) values, primarily because of the increase in density. At 0.015 MeV, the LAC (cm−1) values are highest, ranging from 43.94 (LMBSFe-0) to 69.811 (LMBSFe-5) while, At 15 MeV, values decrease sharply to 0.074 (LMBSFe-0) and 0.1 (LMBSFe-5). At 0.015 MeV, mean free path decreased from 0.02276 for (LMBSFe-0) to 0.01432 for (LMBSFe-5) (cm) while, At 15 MeV, decreased from 13.5882 for (LMBSFe-0) to 10.04991 for (LMBSFe-5). The decrease in MFP with higher Fe2O3 content reduces photon penetration and enhances glass shielding capability. Therefore, LMBSFe-5 exhibited the best γ-ray shielding performance among the studied compositions.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 11","pages":"2705 - 2714"},"PeriodicalIF":3.3,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145142910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Microstructural and Mechanical Improvements in A356 Composites on Incorporating Polymer Derived Ceramics Through Ultrasonication at Semi-solid and Liquid State 半固态和液态超声改善聚合物衍生陶瓷A356复合材料的组织和力学性能

IF 3.3 3区材料科学

Silicon Pub Date : 2025-07-10 DOI: 10.1007/s12633-025-03371-y

Arulpandian Palanisamy, Nagaraj Chelliah Machavallavan, Dhanasekar Ramalingam, Kumaravel Sundaram

{"title":"Microstructural and Mechanical Improvements in A356 Composites on Incorporating Polymer Derived Ceramics Through Ultrasonication at Semi-solid and Liquid State","authors":"Arulpandian Palanisamy, Nagaraj Chelliah Machavallavan, Dhanasekar Ramalingam, Kumaravel Sundaram","doi":"10.1007/s12633-025-03371-y","DOIUrl":"10.1007/s12633-025-03371-y","url":null,"abstract":"<div>This research investigates the fabrication of in-situ A356 matrix composites reinforced with polymer-derived ceramics via ultrasonication at semi-solid (620 °C) and liquid-state (720 °C) temperatures. A fixed volume percentage of 2.5% cross-linked polymer was injected into the molten A356 using ultrasonic-assisted stir casting. Microstructural analysis revealed a significant grain refinement in the composite fabricated at 620 °C, with grain sizes approximately 30% smaller compared to the 720 °C composite and the as-cast A356. XRD analysis of the composite synthesized at 620 °C did not manifest an Mg2Si peak, implying the likelihood of this phase formation only at temperatures surpassing 650 °C. The 620 °C composite also exhibited a 44% increase in hardness compared to the 720 °C composite. While the yield strength of the 720 °C composite showed a marginal improvement, the 620 °C composite demonstrated a substantial 20% increase in yield strength without a noticeable reduction in ductility, attributed to the uniform dispersion of SiOC particles. This study highlights the benefits of combining ultrasonication and semi-solid processing for enhancing the microstructure and mechanical properties of A356-SiOC composites.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 11","pages":"2715 - 2727"},"PeriodicalIF":3.3,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145142911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Comprehensive Analysis of Silane Coatings on Carbon Steel: From Microscopy to Quantum Chemistry 碳钢表面硅烷涂层的综合分析：从显微到量子化学

IF 3.3 3区材料科学

Silicon Pub Date : 2025-07-09 DOI: 10.1007/s12633-025-03378-5

Kaixuan Zhang, Yongjuan Geng, Shaochun Li, Dongshuai Hou, Muhan Wang, Ang Liu, Yu Zhou, Yancen Liu, Meng Wang, Zhonglin Xiao, Xiaoyu Zhang

{"title":"Comprehensive Analysis of Silane Coatings on Carbon Steel: From Microscopy to Quantum Chemistry","authors":"Kaixuan Zhang, Yongjuan Geng, Shaochun Li, Dongshuai Hou, Muhan Wang, Ang Liu, Yu Zhou, Yancen Liu, Meng Wang, Zhonglin Xiao, Xiaoyu Zhang","doi":"10.1007/s12633-025-03378-5","DOIUrl":"10.1007/s12633-025-03378-5","url":null,"abstract":"<div>In the realm of eco-friendly metal pretreatment methods as a substitute for chromates, silanes have emerged as a prominent option for augmenting the adhesion of polymer coatings onto the surfaces of carbon steel. However, there exists a notable dearth of research at the nanoscale, delving into the interaction between silanes and carbon steel surfaces. To address this gap, silane coatings were applied on the carbon steel surface via an electrodeposition process. A comprehensive investigation was conducted to elucidate the interfacial bonding characteristics and corrosion inhibition mechanism between silanes and hydroxylated carbon steel surfaces using an array of analytical techniques, including scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Fourier-transform infrared spectroscopy (FT-IR), Raman spectroscopy, molecular dynamics (MD) simulations, and density functional theory (DFT) calculations. The results revealed that the silane layer achieved stable adsorption, with a contact angle of 91.29°, forming a robust interface with the passivation layer on the carbon steel surface. The hydrogen bonding interactions between the silanol groups in the silane molecules and the hydroxyl groups within the passivation film on the carbon steel surface were identified as the primary mechanism responsible for this adsorption. This integrated approach combining experimental and computational methods provides new insights into the interfacial bonding and corrosion inhibition behavior of silane coatings, thereby offering a scientific foundation for their practical application in metal protection systems.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 11","pages":"2673 - 2689"},"PeriodicalIF":3.3,"publicationDate":"2025-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145143010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Multiplexer Based All-Optical NOR, NAND, XNOR and XOR Gates Using Silicon Microring Resonator: Design and Analysis 基于硅微环谐振器的全光NOR、NAND、XNOR和XOR门的多路复用器：设计与分析

IF 3.3 3区材料科学

Silicon Pub Date : 2025-07-09 DOI: 10.1007/s12633-025-03372-x

Selvakumarasamy Kathirvelu, Somasundaram Kasiviswanathan, Chidambarathanu Krishnan, Sultan Mahaboob Basha, Manjur Hossain

引用次数: 0

Tunable Performance of Amorphous In-Zn-O Thin Film Transistors via Silicon Doping for Logic Circuit Integration 基于硅掺杂的非晶In-Zn-O薄膜晶体管在逻辑电路集成中的可调性能

IF 3.3 3区材料科学

Silicon Pub Date : 2025-06-27 DOI: 10.1007/s12633-025-03359-8

Sunjin Lee, Tae Ho Kim, Sang Ji Kim, Sang Yeol Lee

引用次数: 0

Fractional-order Photo-thermoelastic Model for Laser-induced Dynamic Response in Sandwich Laminated Semiconductor Composites 激光诱导夹层半导体复合材料动态响应的分数阶光热弹性模型

IF 3.3 3区材料科学

Silicon Pub Date : 2025-06-27 DOI: 10.1007/s12633-025-03365-w

Chenlin Li, Jiaxi Zhou, Tianhu He

{"title":"Fractional-order Photo-thermoelastic Model for Laser-induced Dynamic Response in Sandwich Laminated Semiconductor Composites","authors":"Chenlin Li, Jiaxi Zhou, Tianhu He","doi":"10.1007/s12633-025-03365-w","DOIUrl":"10.1007/s12633-025-03365-w","url":null,"abstract":"<div>Laser heating technology as new hyperfine-precision approach which has been widely applied in the micro-machining of the sandwich laminated semiconductor composites (SLSC), where the memory-dependency of the strain and heat transport significantly increases. To accurately predict the micro-scale transient impact response of SLSC subjected to the non-Gaussian laser beam, a new Cattaneo-photo-thermoelastic model is established in this work based on memory-dependent strain and heat transport evolution laws with Atangana-Baleanu and Tempered-Caputo fractional derivatives. This model aims to analyze the influences of memory dependent thermal transport and strain as well as the parameters ratios of inner/outer layer materials on the photo-thermoelastic response and wave propagations in SLSC. The time-domain solutions of the one-dimensional multi-variables partial differential equations are solved via semi-analytical technique based on Laplace transformation. Dimensionless numerical results reveal that the decrease of the memory-dependent parameters of heat transport and strain lower the thermal wave propagation speed and reduce harmful stress and deformation in the SLSC. And the properly selecting parameters of laser intensity, pulse duration and semiconductor parameters ratios maximally improve the photo-thermo-mechanical impact responses and photo-thermal waves.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 11","pages":"2651 - 2672"},"PeriodicalIF":3.3,"publicationDate":"2025-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145145036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Layer-Resolved Spin and Charge Interplay in H-, Ag-, and Au-Adsorbed Si(111) Surfaces: Insights into Metallicity and Magnetism 层分辨自旋和电荷在H-， Ag-和au吸附Si（111）表面的相互作用：对金属丰度和磁性的见解

IF 3.3 3区材料科学

Silicon Pub Date : 2025-06-24 DOI: 10.1007/s12633-025-03370-z

Nasim Hassani

{"title":"Layer-Resolved Spin and Charge Interplay in H-, Ag-, and Au-Adsorbed Si(111) Surfaces: Insights into Metallicity and Magnetism","authors":"Nasim Hassani","doi":"10.1007/s12633-025-03370-z","DOIUrl":"10.1007/s12633-025-03370-z","url":null,"abstract":"<div>This study investigates the electronic and magnetic properties of H-, Ag-, and Au-adsorbed Si(111) surfaces across single-layer (1L), bilayer (2L), trilayer (3L), and four-layer (4L) configurations using density functional theory (DFT) calculations. We considered a new Si(111) configuration, which is semiconducting with a 1.19 eV band gap, slightly differing from its counterpart, the metallic Si(111). All H/Si(111) structures are semiconductors with a band gap in the range of 1.00 to 2.03 eV. Ag has a less pronounced effect on the semiconducting behavior, maintaining reduced band gaps, while Au induces metallicity and strong spin polarization, especially in 2L and 3L systems. The magnetic character in Au/Si(111) arises from significant contributions of d-orbitals, promoting electron delocalization and structural strain. These findings highlight a clear relationship between layer thickness and electronic properties, with increased stability in multilayer configurations. These results provide valuable insights into the interplay between metal adsorption and electronic structure, with promising implications for spintronic and catalytic applications.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 11","pages":"2635 - 2650"},"PeriodicalIF":3.3,"publicationDate":"2025-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145144615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Process Optimization and Leaching Behavior of Copper in Oxidation Leaching Spent Silicon Contact in Sulfuric Acid Systems 硫酸体系氧化浸出废硅接触中铜的工艺优化及浸出行为

IF 3.3 3区材料科学

Silicon Pub Date : 2025-06-23 DOI: 10.1007/s12633-025-03362-z

Xiaoyi Yao, Dandan Wu, Chong Chen, Yuxuan Tian, Xingwei Yang

{"title":"Process Optimization and Leaching Behavior of Copper in Oxidation Leaching Spent Silicon Contact in Sulfuric Acid Systems","authors":"Xiaoyi Yao, Dandan Wu, Chong Chen, Yuxuan Tian, Xingwei Yang","doi":"10.1007/s12633-025-03362-z","DOIUrl":"10.1007/s12633-025-03362-z","url":null,"abstract":"<div>The current silicone industry is in a stage of rapid development, but the problem is that in the process of its development, a lot of silicone waste contacts have been generated, and the generation of this problem shows that there is a waste of resources. The rational utilization of organic silicon waste contacts which contains silicon and copper restricts the development of organic silicon industry. In consideration of the limited copper resources, it is of great significance to recover copper from the waste contacts. In this study, sodium hypochlorite was adopted as an oxidant to leach copper from spent silicon contacts under sulfuric acid system, and the leaching mechanism was studied in detail by various characterization methods (SEM–EDS, XPS, AFM), and kinetic analysis was also conducted. The effects of sodium hypochlorite concentration, sulfuric acid concentration, temperature and solid–liquid ratio on copper leaching efficiency were studied by two-factor experiments with time addition, and the leaching process was optimized. The experimental results show that the oxidative acid leaching method of sodium hypochlorite combined with sulfuric acid is more efficient and feasible than that of single sulfuric acid leaching, and the copper leaching rate reaches 97.55%, which is due to the fact that sodium hypochlorite will reduce the production of copper element. This study provides the feasibility of a new oxidant application for the recycling of waste silicon contact copper, which will facilitate the sustainable development of the silicone industry.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 11","pages":"2619 - 2634"},"PeriodicalIF":3.3,"publicationDate":"2025-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145144408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Silicon最新文献