Multiplexer Based All-Optical NOR, NAND, XNOR and XOR Gates Using Silicon Microring Resonator: Design and Analysis

IF 3.3 3区 材料科学 Q3 CHEMISTRY, PHYSICAL
Silicon Pub Date : 2025-07-09 DOI:10.1007/s12633-025-03372-x
Selvakumarasamy Kathirvelu, Somasundaram Kasiviswanathan, Chidambarathanu Krishnan, Sultan Mahaboob Basha, Manjur Hossain
{"title":"Multiplexer Based All-Optical NOR, NAND, XNOR and XOR Gates Using Silicon Microring Resonator: Design and Analysis","authors":"Selvakumarasamy Kathirvelu,&nbsp;Somasundaram Kasiviswanathan,&nbsp;Chidambarathanu Krishnan,&nbsp;Sultan Mahaboob Basha,&nbsp;Manjur Hossain","doi":"10.1007/s12633-025-03372-x","DOIUrl":null,"url":null,"abstract":"<div><p>Proposed manuscript designs and analyzes the all-optical NOR, NAND, XNOR and XOR gates using silicon microring resonator based 2:1 multiplexer. Growing demand for ultra-fast terahertz data transfer and processing has driven the field to consider large-scale optical integrated circuits as a substitute to traditional CMOS technology. In addition, energy-efficient networks are becoming more essential. MATLAB is used to design and analyze the architecture at almost 260 Gbps. Different key performance parameters are assessed such as contrast ratio of 18.8 dB, extinction ratio of 15.8 dB and amplitude modulation of 0.11 dB at a very low pump power of 1.96 mW which is satisfactory for the proposed design. Processing of digital signals and communication systems can benefit greatly from the demonstrated multiplexer-based circuits' compact architecture and faster reaction times. To make practical use of the design, optimal design parameters are selected.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 11","pages":"2691 - 2703"},"PeriodicalIF":3.3000,"publicationDate":"2025-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-025-03372-x","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

Abstract

Proposed manuscript designs and analyzes the all-optical NOR, NAND, XNOR and XOR gates using silicon microring resonator based 2:1 multiplexer. Growing demand for ultra-fast terahertz data transfer and processing has driven the field to consider large-scale optical integrated circuits as a substitute to traditional CMOS technology. In addition, energy-efficient networks are becoming more essential. MATLAB is used to design and analyze the architecture at almost 260 Gbps. Different key performance parameters are assessed such as contrast ratio of 18.8 dB, extinction ratio of 15.8 dB and amplitude modulation of 0.11 dB at a very low pump power of 1.96 mW which is satisfactory for the proposed design. Processing of digital signals and communication systems can benefit greatly from the demonstrated multiplexer-based circuits' compact architecture and faster reaction times. To make practical use of the design, optimal design parameters are selected.

基于硅微环谐振器的全光NOR、NAND、XNOR和XOR门的多路复用器:设计与分析
基于2:1多路复用器的硅微环谐振器设计并分析了全光NOR、NAND、XNOR和XOR门。对超快速太赫兹数据传输和处理的需求不断增长,促使该领域考虑大规模光学集成电路作为传统CMOS技术的替代品。此外,节能网络正变得越来越重要。利用MATLAB设计和分析了近260 Gbps的架构。在非常低的泵浦功率1.96 mW下,对对比度18.8 dB、消光比15.8 dB和调幅0.11 dB等关键性能参数进行了评估,使设计满意。数字信号和通信系统的处理可以从演示的基于多路复用器的电路的紧凑结构和更快的反应时间中受益匪浅。为使设计能实际应用,选择了最优设计参数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Silicon
Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.90
自引率
20.60%
发文量
685
审稿时长
>12 weeks
期刊介绍: The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信