Silicon最新文献

{"title":"Synthesis and Characterization of Highly Transparent and Hydrophobic Coating from Emulsified PDMS and Padma River Sand Extracted Silica Nano-Composite","authors":"Md. Al-Riad Tonmoy,&nbsp;Md. Aminul Islam,&nbsp;Md. Iqbal Hossain,&nbsp;Firoz Ahmed","doi":"10.1007/s12633-026-03762-9","DOIUrl":"10.1007/s12633-026-03762-9","url":null,"abstract":"<div><p>A novel method to surface engineering, hydrophobic nanocomposite coatings combine polymer matrices and nanoscale roughness to create water-repellent and self-cleaning surfaces for cutting-edge environmental and technological applications. In the present study, micro silicone emulsion developed by modifying polydimethylsiloxane (SE-PDMS) and silica nanoparticles (Si-NPs) was used to fabricate a hydrophobic coating on a glass substrate by using traditional painting brush. Si-NPs were synthesized from Padma River sand by following the sol–gel technology. Before incorporation in the polymer matrix, surface modification of Si-NPs was performed by stearic acid to alter the hydrophilic nature and reduce the agglomeration tendency. Si-NPs and coatings were characterized by X-ray diffraction (XRD), Fourier Transform Infrared (FTIR) spectroscopy, Scanning Electron Microscopy (SEM) analysis, Energy-Dispersive X-ray Spectroscopy (EDS), Ultraviolet–visible (UV–vis) spectroscopy, water contact angle (WCA) analysis, surface roughness analysis, and antifogging analysis. XRD analysis revealed the broad peak at 22.15°, confirming the presence of amorphous silica with an average crystallite size of 46 nm. With distinctive Si–O–Si, Si–C, and –CH₃ bands suggesting a persistent silicone-polyether layer, FTIR spectra verified the effective coating of SE-PDMS and surface-modified silica on glass. On the other hand, stearic-acid-modified silica added extra C–H and C = O peaks, improving hydrophobicity. SEM showed fine, nearly spherical, amorphous silica nanoparticles with some agglomeration (average size ~ 58 nm), while SE-PDMS coatings formed uniform, compact films on glass. The presence of Si and O in silica and C, Si, and O in coated surfaces was confirmed by EDS, confirming successful nanoparticle synthesis and SE-PDMS deposition. By using the absorption spectra and Tauc plot, the band gap of silica nanoparticles was calculated to be 3.75 eV. By substituting hydrophobic methyl groups for hydrophilic hydroxyls, the 0.5% SE-PDMS coating raised the glass CA from 32° to 105°. It was then improved to 113° by adding 0.1% silica nanoparticles treated with stearic acid, which improved dispersion and hydrophobicity. With increasing CA, the roughness of coatings was also increased. Due to nanoparticle-induced scattering, the high optical transmittance (~ 97%) of 0.5% SE-PDMS coatings was somewhat reduced (~ 95%) when using unmodified silica. However, by enhancing dispersion and lowering surface roughness, the same amount of stearic-acid-modified silica restored transmittance (~ 97%). Hydrophobic coatings showed anti-fogging property by condensing water droplets with a WCA of more than 90°. To evaluate mechanical stability, an adhesive tape peeling test was carried out. Again, solutions of pH from 1 to 14 by using NaOH and H₂SO₄ were used to evaluate the chemical durability of the coatings.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"18 12","pages":"4045 - 4064"},"PeriodicalIF":4.1,"publicationDate":"2026-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148859806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Engineering PS–PEG/SiO2–Co2O3 Nanocomposites with Tunable Optical and Dielectric Properties for Flexible Pressure-Sensor Applications","authors":"Ahmed Hashim,&nbsp;Ali Salim Jawad,&nbsp;Hiba Salman Abdulsalam,&nbsp;Salah Eddine Laouini,&nbsp;Abderrhmane Bouafia,&nbsp;Aseel Hadi,&nbsp;Chaima Salmi,&nbsp;Hamdi Ali Mohammed","doi":"10.1007/s12633-026-03761-w","DOIUrl":"10.1007/s12633-026-03761-w","url":null,"abstract":"<div><p>This study presents the fabrication and characterization of PS–PEG/SiO₂–Co₂O₃ nanocomposites synthesized via a simple solution-casting method for pressure-sensing applications. Hybrid films containing 1.1–3.3 wt% SiO₂–Co₂O₃ nanoparticles were incorporated into a PS–PEG blend. Structural, optical, and dielectric properties were investigated to assess nanoparticle effects on performance. Optical microscopy confirmed uniform nanoparticle dispersion and network formation at higher loadings. FTIR spectra revealed physical interactions between polymer chains and nanoparticles through weak dipole–dipole and hydrogen bonding. UV–Vis analysis showed a strong absorption band at 260 nm, with intensity increasing by 81% and the indirect band gap decreasing from 4.10 to 3.75 eV. The refractive index and optical conductivity also rose, indicating enhanced polarizability and charge transfer. Dielectric studies showed that the dielectric constant and loss decreased with frequency but increased with nanoparticle loading, reaching 4.8 and 0.29 at 10 kHz for 3.3 wt%. AC conductivity increased with both frequency and filler content, suggesting a hopping conduction mechanism. Under applied pressure, dielectric parameters increased due to improved interparticle contact. These results confirm that PS–PEG/SiO₂–Co₂O₃ nanocomposites exhibit tunable optical and dielectric features suitable for flexible and cost-effective pressure sensors.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"18 12","pages":"4027 - 4044"},"PeriodicalIF":4.1,"publicationDate":"2026-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148859808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Small Molecules and Big Gains: A Review on the Future of Bifacial Dye-Sensitized Solar Cells","authors":"Nimra Sultan,&nbsp;Muhammad Ramzan Saeed Ashraf Janjua","doi":"10.1007/s12633-026-03772-7","DOIUrl":"10.1007/s12633-026-03772-7","url":null,"abstract":"<div><p>Bifacial dye-sensitized solar cells (BF-DSSCs) are an advanced type of opto-electro-mechanical systems, which utilize light-absorbing dyes on both sides of the cell to facilitate higher power conversion efficiency (PCE). Due to dual absorption, BF-DSSCs are greatly useful in a broad lighting environment as they can efficiently harness reflected and diffuse light. The way dyes adsorb and anchor to mesoporous titanium dioxide (TiO₂) can improve performance. Recent developments aim to preserve high bifaciality factors (rear/front PCE ratio) of about 83% and pump up cumulative PCEs above 7% by optimizing dye combinations e.g. visible dyes combined with near-infrared dyes to ensure long life and transparency. BF-DSSCs are well poised to penetrate applications including indoor energy harvesting and building-integrated photovoltaics (BIPV) due to their structure, although manufacturing complexity challenges remain. Comparative J–V plot analysis under front, rear, and dual-side illumination is used to reveal bifacial effects on current density, voltage output, and recombination dynamics in BF-DSSCs. Using density functional theory (DFT) tools to work with specialized simulation software, it is possible to gain a better understanding of the factors affecting the efficiency of bifacial dye-sensitized solar cells. The use of machine learning in bifacial dye-sensitized solar cells analysis is to create drastic change. By helping researchers to more effectively optimize designs, predict efficiencies and discover novel materials with methods such as random forests or artificial neural networks (ANNs) it leads to game-changing breakthroughs in solar energy technology. Incorporating the BF-DSSCs into BIPV and greenhouses necessitates not only a satisfactory average visible transmittance (AVT) but also optimal visible light harvesting properties for effective solar-to-electric power conversion. These developments make the BF-DSSCs an attractive supplement to traditional solar technologies and are likely to offer a meaningful role in the overall renewable energy project.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"18 12","pages":"3981 - 4009"},"PeriodicalIF":4.1,"publicationDate":"2026-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148859904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimization of Source-Engineered Broken Gate TFET with Germanium Source for Ultra-Low Power Biosensing Applications","authors":"Chaliti Fikadu Wakweya,&nbsp;Avtar Singh,&nbsp;Davinder Singh Rathee,&nbsp;Inderpreet Kaur,&nbsp;R. Balachandran","doi":"10.1007/s12633-026-03760-x","DOIUrl":"10.1007/s12633-026-03760-x","url":null,"abstract":"<div><p>This paper addresses the imperative need for low-power electronic devices, which is crucial in today's technology landscape where energy efficiency and portability are paramount. Traditional MOSFETs, while prevalent, face significant challenges when scaled down for low power applications, particularly due to high leakage currents and suboptimal performance at lower voltages. Tunnel Field-Effect Transistors (TFETs) emerge as a viable solution due to their ability to achieve steeper subthreshold slopes (SS), enabling lower operational voltages and reduced power consumption. However, TFETs inherently suffer from limitations such as low ON-current (I_ON) and ambipolarity, which hinder their widespread adoption. To mitigate these issues, this research explores advanced source engineering techniques to enhance TFET performance. The study begins with the double gate TFETs (DGTFET), followed by an investigation into broken gate TFETs (BG-TFET), focusing on optimizing parameters such as drain doping concentration, gate-drain underlap, and drain split configurations. Gate discontinuity in broken gate TFETs enhances the local electric field at the tunneling junction, boosting ON-state current. It also suppresses ambipolar leakage, improving overall device efficiency for low-power applications. A significant advancement is achieved by introducing a Germanium source in the broken gate TFET (Ge-BG-TFET), aimed at improving the I_ON. Simulations conducted using TCAD software demonstrate an I_ON of around 10^–5 A/µm, and by employing the split drain technique the ambipolar current reduced to I_A of around 10^–11 A/µm. These results indicate a substantial improvement in device efficiency, effectively overcoming the low I_ON challenge of traditional TFETs while maintaining low power operation. Furthermore, the applicability of the proposed Germanium source broken gate TFET structure is validated through its realization in low power biosensing application.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"18 12","pages":"3969 - 3980"},"PeriodicalIF":4.1,"publicationDate":"2026-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148859826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Machine Learning Approach Toward Near-Homogeneous Properties of Eutectic Aluminum Silicon Alloy Fabricated by a Wire Arc Direct Energy Deposition","authors":"M. Hemachandra,&nbsp;Ramesh Mamedipaka,&nbsp;Shivraman Thapliyal","doi":"10.1007/s12633-026-03773-6","DOIUrl":"10.1007/s12633-026-03773-6","url":null,"abstract":"<div><p>This study present a parameter-based machine learning approach to predict optimal bead geometries in wire arc direct energy deposition (Wa-DED), aiming to reduce the time-consuming and costly trial-and-error procedures typically employed during process development. Decision trees, random forests, and K-nearest neighbors (KNN) models were trained and validated, with all three achieving comparable accuracy. Notably, the random forest model demonstrated superior performance in terms of accuracy, F1 score, and area under the curve (AUC). To further validate the optimized parameters, multilayer thin-walled Al-4047 structures were fabricated and comprehensively evaluated for both microstructural and mechanical properties. Microstructural analysis revealed α-Al dendrites with short, rounded Si in the interlayer and fine, fibrous Si in the melting zone, while EBSD confirmed predominantly equiaxed dendritic grains without a dominant crystallographic orientation, highlighting strong heterogeneity during solidification. Notably, the sample fabricated under lower heat input conditions (sample-2) exhibited refined grains (92 ± 59 μm) and the highest average misorientation angle (10.14°) owing to its lower heat input. In contrast, the sample fabricated at lower equivalent heat input but with a higher current amplitude (Sample 3) exhibited higher KAM values and the highest dislocation density (~ 2.3 × 1014 m⁻2) due to intensified thermal gradients and cyclic thermal strains. These microstructural features strongly correlated with mechanical behavior, as Sample 2 with its finer grains, higher misorientation, and reduced porosity, achieved superior tensile strength (187.56 ± 11.40 MPa) and ductility (8.32 ± 0.66%), thereby demonstrating the efficacy of combining machine learning optimization with microstructural validation in tailoring Wa-DED components.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"18 12","pages":"4011 - 4026"},"PeriodicalIF":4.1,"publicationDate":"2026-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148859827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Temperature, Work Function, and Doping Effect on Performance of Si/GaN-based Sub-10 nm Gate-stack Cylindrical GAA-SMG High Frequency FET","authors":"Shankhamitra Sunani,&nbsp;Satya Sopan Mahato,&nbsp;Ashutosh Chakrabarty,&nbsp;Asisa Kumar Panigrahy,&nbsp;Raghunandan Swain","doi":"10.1007/s12633-026-03759-4","DOIUrl":"10.1007/s12633-026-03759-4","url":null,"abstract":"<div><p>In this paper, we examine the DC, analog/RF performance metrics of gate-stacked cylindrical gate-all-around (CGAA) single-material gate (SMG) Si and GaN nanowire field-effect transistors (NWFETs), focusing on the effect of temperature, doping concentration, and work function (ϕ) at sub-10 nm node. DC and AC/RF performance metrics are investigated, including drain induced barrier lowering (DIBL), subthreshold swing (SS), ON current (<i>I</i>_<i>ON</i>), OFF current (<i>I</i>_<i>OFF</i>), transconductance (g_m), transconductance generation factor (TGF), output conductance (g_d), early voltage (V_EA), parasitic capacitance (C_gg), cut-off frequency(f_T). Power consumption was analysed and compared between the SMG Si and GaN CGAA NWFET devices. In both devices, an increase in ϕ suppresses short-channel effects (SCE) and improves leakage performance, with GaN showing a substantially lower <i>I</i>_<i>OFF</i> reaching less than nA in the range of 10⁻¹⁵A and a higher V_EA of 83.51 V. Si NWFET exhibits a higher gₘ of 62.45µS and f_T to be in the THz range during temperature change, but they also have a worsened switching ratio (<i>I</i>_<i>ON</i><i>/I</i>_<i>OFF</i>) and more leakage, while GaN devices continue to exhibit superior thermal stability and analogue behaviour. Doping variation demonstrates that, even at high doping, GaN maintains superior <i>I</i>_<i>ON</i><i>/I</i>_<i>OFF</i> ratio in the range of 10⁸ and output characteristics, whereas I_ON improves in both devices. GaN offers superior TGF and leakage control, while Si delivers higher gₘ and marginally better f_T at low doping. Si NWFET continues to function well for high-speed digital logic under moderate thermal and doping circumstances, whereas GaN NWFETs are generally better suited for low-power and high-temperature applications.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"18 12","pages":"3953 - 3968"},"PeriodicalIF":4.1,"publicationDate":"2026-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148859903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advanced Structural Modification in Bismuth-Based Nano-Bioactive Glass: The Effect of Iron Oxide on Biocompatibility Enhancement","authors":"Mahmoud A. Kenawy,&nbsp;M. A. Abu Ghazala,&nbsp;Taha M. Tiama,&nbsp;Ayman S. El Shinawy,&nbsp;H. H. El-Bahnasawy","doi":"10.1007/s12633-026-03755-8","DOIUrl":"10.1007/s12633-026-03755-8","url":null,"abstract":"<div><p>A sol–gel method created a nano-sized bismuth oxide bioglass doped with iron oxide. Immersing samples in simulated body fluid (SBF) for different times assessed bioactivity in vitro. Bioglass was characterized using XRD, FTIR, Iron-57 Mössbauer, SEM, EDX, and DLS. In iron-rich samples, especially those with higher iron concentrations, Fe ions infiltrated the glass matrix faster than Si ions. Osteoblast-like MC3T3-E1 cells, especially those with iron adhered to bioactive glass (BAG), when co-cultivated. The material may be used in thermoseeds for targeted drug delivery or osteogenesis.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"18 12","pages":"3935 - 3951"},"PeriodicalIF":4.1,"publicationDate":"2026-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148859805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Green-Synthesized Silicon Nitride Nanoparticles Derived from Cocos nucifera on the Properties of Araceae Stem Fiber-Reinforced Epoxy Composites","authors":"R. Premkumar,&nbsp;K. Raju","doi":"10.1007/s12633-026-03766-5","DOIUrl":"10.1007/s12633-026-03766-5","url":null,"abstract":"<div><p>This study addresses the limited understanding of how green-synthesized ceramic nanoparticles and surface-treated natural fibers synergistically enhance multifunctional performance in epoxy composites. The work investigates the combined influence of alkaline and silane-treated <i>Araceae</i> stem fiber and silicon nitride (Si₃N₄) nanoparticles, synthesized from <i>Cocos nucifera</i> inflorescences, on the mechanical, wear, wettability, and thermal behavior of epoxy composites. Composites were fabricated via hand layup with 30 vol. % fiber and varying Si₃N₄ contents (0.5–4.5 vol. %). The composite containing 2.5 vol. % Si₃N₄ exhibited the optimum balance of mechanical properties, achieving a tensile strength of 158 MPa, flexural strength of 183 MPa, and impact energy of 4.97 J, indicating effective stress transfer and improved interfacial bonding. In contrast, 4.5 vol.% Si₃N₄ provided superior surface and durability characteristics, including a maximum water contact angle of 95°, Shore-D hardness of 98, lowest specific wear rate (0.32 mm³/Nm), reduced coefficient of friction (0.46), and enhanced thermal stability with decomposition temperatures up to 429 °C. Morphological analysis confirmed improved fiber-matrix adhesion and uniform nanoparticle dispersion due to combined chemical treatment. The results demonstrate that controlled Si₃N₄ incorporation enables property tailoring, where 2.5 vol. % is optimal for structural performance, while higher loading enhances surface and thermal resistance.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"18 12","pages":"3919 - 3933"},"PeriodicalIF":4.1,"publicationDate":"2026-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148859804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A p-n Junction Gate DRAM for Non-Destructive and Linear Synaptic Modulation in Neuromorphic Computing","authors":"Eungi Hwang,&nbsp;Ilho Myeong,&nbsp;Garam Kim","doi":"10.1007/s12633-026-03764-7","DOIUrl":"10.1007/s12633-026-03764-7","url":null,"abstract":"<div><p>Building on the p-n junction gate DRAM structure presented in [1], this paper evaluates its potential as a synaptic element for neuromorphic computing. Unlike conventional floating-body-based one-transistor dynamic random-access memory (1T-DRAM) [2,3,4], the proposed device utilizes a p-type gate to store holes, enabling a non-destructive and stable read mechanism while preserving the advantages of fast operation and compact integration. Potentiation and depression operations are realized through band-to-band tunneling (BTBT) by biasing the gate and drain terminals. To address the abrupt conductance drop typically observed in early depression pulses, a partial Incremental Step Pulse Programming (ISPP) scheme is introduced, significantly improving the linearity and controllability of the weight-downdating process. Device-level performance was further benchmarked using fitted conductance curves in NeuroSim V3.0, where the ISPP based implementation achieved a peak inference accuracy of 85.01%, outperforming the general case with improved consistency. These results demonstrate the proposed device’s potential as a scalable and reliable synaptic element for future neuromorphic hardware platforms that require multilevel weight modulation and read stability.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"18 12","pages":"3907 - 3918"},"PeriodicalIF":4.1,"publicationDate":"2026-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148859825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quadruple Metal Gate Work Function Engineering to Enhance Sensitivity of Junctionless Cylindrical Gate All Around In0.53Ga0.47As Nanowire MOSFET Based Biosensor for Neutral Biomolecule Species Detection for the Upcoming Sub 14 nm Technology Node","authors":"Sanjay,&nbsp;Vibhor Kumar,&nbsp;Anil Vohra","doi":"10.1007/s12633-026-03750-z","DOIUrl":"10.1007/s12633-026-03750-z","url":null,"abstract":"<div><p>This work presents a biosensor based on a junctionless cylindrical gate all around (CGAA) In_0.53Ga_0.47As nanowire MOSFET that uses the Dielectric Modulation (DM) technique and quadruple metal (QM) gate engineering to detect neutral biomolecules species such as uricase, streptavidin, protein, biotin, choline oxidase, and APTES, among others, electrically and without labels. A nanogap cavity region is created in the JL In_0.53Ga_0.47As NW MOSFET for biomolecule immobilization by etching the gate oxide layer above the Al₂O₃ interfacial layer. The sensing parameters for biomolecule detection in a dry environment have been the change in the drain current (I_D), threshold voltage (V_TH), off-current sensitivity (S_Ioff), threshold voltage sensitivity (S_Vth), I_ON/I_OFF current ratio, and subthreshold slope (SS) of the device. The current study adds a novel, previously unrecognized biomolecule sensing metric—SS—to the existing literature. In contrast to the results found in previous research, the sensitivity metrics for JL In_0.53Ga_0.47As NW, such as a smaller DIBL (56.39 mV/V), a smaller S_Ioff (2.64 × 10^-3), a higher S_Vth (10), a nearly perfect subthreshold slope (SS) (60 mV/dec), and a higher I_ON/I_OFF current ratio (6.83 × 10⁸), have been acquired in this work.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"18 12","pages":"3897 - 3906"},"PeriodicalIF":4.1,"publicationDate":"2026-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148859824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}