Silicon最新文献 - Book学术

Fabrication of SiC-Al2O3 Nanoceramic Doped Organic Polymer For Flexible Nanoelectronics and Optical Applications 制备掺杂有机聚合物的 SiC-Al2O3 纳米陶瓷，用于柔性纳米电子学和光学应用

IF 2.8 3区材料科学

Silicon Pub Date : 2024-10-16 DOI: 10.1007/s12633-024-03172-9

Ahmed Hashim, Hamed Ibrahim, Aseel Hadi

{"title":"Fabrication of SiC-Al2O3 Nanoceramic Doped Organic Polymer For Flexible Nanoelectronics and Optical Applications","authors":"Ahmed Hashim, Hamed Ibrahim, Aseel Hadi","doi":"10.1007/s12633-024-03172-9","DOIUrl":"10.1007/s12633-024-03172-9","url":null,"abstract":"<div>The current study goals to create of PS-SiC-Al2O3 multifunctional nanocomposites films as a promising nanomaterials to exploit in futuristic nanoelectronics and optical fields. By comparing with other nanocomposites films, the PS-SiC-Al2O3 films have high absorption for UV-radiation, flexible, low band gap, and inexpensive. The microstructure and optical characteristics of PS-SiC-Al2O3 films were investigated. The microstructure and morphological properties included FTIR and OM. The realized results indicated that the values absorbance for PS-SiC-Al2O3 films are high at NIR and UV spectrums. These results build the films of PS-SiC-Al2O3 are promising for NIR sensing, UV shielding and optoelectronics approaches. The increment ratio of PS absorbance is 30.9% for λ = 320 nm and SiC-Al2O3 content is 2.4 wt.%. The PS band gap is 3.8 eV and its reduced to 3.13 eV with increasing SiC-Al2O3 NPs content to 2.4 wt.%.. This performance leads to make the PS-SiC-Al2O3 films are welcomed in various optoelectronics and photonics fields. The optical factors: extinction coefficient; absorption coefficient; real and imaginary dielectric constants, refractive index; and optical conductivity of PS were enhanced with increasing SiC-Al2O3 NPs content; these results of lead to made the PS-SiC-Al2O3 films are suitable for optical fields. Finally, the achieved results confirmed that the PS-SiC-Al2O3 films could be as a key for promising nanoelectronics and optical fields.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 18","pages":"6575 - 6587"},"PeriodicalIF":2.8,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142679802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Physical Properties and Mechanical Behavior of WSi2 at High Pressure 高压下 WSi2 的物理性质和机械行为

IF 2.8 3区材料科学

Silicon Pub Date : 2024-10-16 DOI: 10.1007/s12633-024-03169-4

Lun Xiong, Mingquan Jiang, Xin He, Sheng Jiang

引用次数: 0

Nano Silica Catalyzed Synthesis, NMR Spectral and Photophysical Studies of Imidazole Derivatives 纳米二氧化硅催化咪唑衍生物的合成、核磁共振波谱和光物理研究

IF 2.8 3区材料科学

Silicon Pub Date : 2024-10-15 DOI: 10.1007/s12633-024-03176-5

T. S. Rajasekar, N. Srinivasan, K. Jayamoorthy

{"title":"Nano Silica Catalyzed Synthesis, NMR Spectral and Photophysical Studies of Imidazole Derivatives","authors":"T. S. Rajasekar, N. Srinivasan, K. Jayamoorthy","doi":"10.1007/s12633-024-03176-5","DOIUrl":"10.1007/s12633-024-03176-5","url":null,"abstract":"<div>This study explores the use of nano SiO2 as a catalyst in the synthesis of imidazole derivatives, demonstrating its superior catalytic efficiency compared to conventional catalysts. The high surface area of nano SiO2 significantly enhances reactant interactions, resulting in higher yields of imidazole products. Detailed NMR spectral analysis provided precise characterizations of the imidazole derivatives, revealing well-defined chemical shifts. The influence of solvent polarity on absorption and fluorescence spectra was investigated, showing that polar solvents induce pronounced bathochromic shifts by stabilizing the excited states through hydrogen bonding and dipole interactions. Quantum yield and emission kinetics analyses highlighted the role of non-radiative decay pathways in reducing fluorescence efficiency. Furthermore, DFT calculations of HOMO–LUMO energies elucidated how substituents affect electronic transitions and solvatochromic shifts. These findings underscore the effectiveness of nano SiO2 as a catalyst, illustrate the impact of solvent interactions on molecular behavior, and provide comprehensive insights into the electronic properties of imidazole derivatives, offering valuable implications for both research and practical applications.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 18","pages":"6555 - 6565"},"PeriodicalIF":2.8,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142679720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

SiNPs Decoration of Silicon Solar Cells and Size Analysis on the Downshifting Mechanism Response for the Enhancement of Solar Cells Efficiency 硅纳米粒子装饰硅太阳能电池及尺寸分析对提高太阳能电池效率的下移机制响应

IF 2.8 3区材料科学

Silicon Pub Date : 2024-10-15 DOI: 10.1007/s12633-024-03165-8

A. Ramos-Carrazco, S. de la Cruz-Arreola, J. A. Martínez-Zamora, R. J. Borralles-Linarte, D. Berman-Mendoza, A. Vera-Marquina, J. B. Robles-Ocampo, H. J. Higuera-Valenzuela, R. Rangel

{"title":"SiNPs Decoration of Silicon Solar Cells and Size Analysis on the Downshifting Mechanism Response for the Enhancement of Solar Cells Efficiency","authors":"A. Ramos-Carrazco, S. de la Cruz-Arreola, J. A. Martínez-Zamora, R. J. Borralles-Linarte, D. Berman-Mendoza, A. Vera-Marquina, J. B. Robles-Ocampo, H. J. Higuera-Valenzuela, R. Rangel","doi":"10.1007/s12633-024-03165-8","DOIUrl":"10.1007/s12633-024-03165-8","url":null,"abstract":"<div>In this work, we present experimental and theoretical analysis of the absorbance of the SiNPs that exhibit an interesting behavior on light manipulation through the downshifting mechanism. Silicon nanoparticles (1 nm <radius < 3 nm) were synthesized using a green chemistry method, and characterized to determine its experimental absorbance region, size, crystallographic structure, and luminescence response. To evaluate the theoretical absorbance performance of SiNPs (radius < 3 nm), Mie’s theory was used to explore different scenarios considering: an isolated single silicon NP, an array of SiNPs with a specific size distribution and Si-SiO2 core-shell NPs. Also, a simple model to analyze the luminescence and their effect using a size distribution on the emission spectra are examined. Finally, the efficiency enhancement of Si solar cells using SiNPs as a downshifting material was explored. The presence of the nanoparticles on the device’s surface was revealed by scanning electron microscopy. The solar cell’s parameters, current-voltage characteristics, power-voltage curves were obtained. A current density of 24.2 mA/cm(^2), open-circuit voltage of 610 mV and a fill factor of 72% and an overall power conversion efficiency of 45% are reported. These results show that the controlled dosing of SiNPs in aqueous solution has a high potential to be applied as an antireflective coating complement to improve the efficiency of large-scale solar cells due to the simplicity of the method, low toxicity and easy distribution over large areas.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 18","pages":"6541 - 6553"},"PeriodicalIF":2.8,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142679719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Examination of Potential of Fe-Si78, Fe-C78, Fe-B39P39, Fe-SiNT (9, 0), Fe-CNT (9, 0) and Fe-BPNT (9, 0) to Deliver the Chloroquine as Drug of Coronavirus Disease 研究 Fe-Si78、Fe-C78、Fe-B39P39、Fe-SiNT (9，0)、Fe-CNT (9, 0) 和 Fe-BPNT (9, 0) 释放氯喹作为冠状病毒药物的潜力

IF 2.8 3区材料科学

Silicon Pub Date : 2024-10-14 DOI: 10.1007/s12633-024-03175-6

Junjuan Zhang, Xiangtao Yu

{"title":"Examination of Potential of Fe-Si78, Fe-C78, Fe-B39P39, Fe-SiNT (9, 0), Fe-CNT (9, 0) and Fe-BPNT (9, 0) to Deliver the Chloroquine as Drug of Coronavirus Disease","authors":"Junjuan Zhang, Xiangtao Yu","doi":"10.1007/s12633-024-03175-6","DOIUrl":"10.1007/s12633-024-03175-6","url":null,"abstract":"<div>This work wants to examine the potential of Fe-Si78, Fe-C78, Fe-B39P39, Fe-doped NT (9, 0) for delivering the Chloroquine as COVID-19 drug by theoretical models. The ΔEadsorption, ΔHadsorption and ΔGadsorption values for adsorption of Chloroquine on surfaces of Fe-Si78, Fe-C78, Fe-B39P39, Fe-doped NT (9, 0) are calculated. The Fe adoption of structures can improve the thermodynamic stability of Si78, C78, B39P39, SiNT (9, 0), CNT (9, 0) and BPNT (9, 0). The ΔGadsorption of adsorption of Chloroquine on surfaces of Fe-Si78, Fe-C78, Fe-B39P39, Fe-doped NT (9, 0) are -2.94, -3.05, -3.19, -3.65, -3.78 and -3.87 eV, respectively. The Fe-BPNT (9, 0) and Fe-B39P39 have higher τ and q than Fe-Si78, Fe-C78, Fe-doped NT (9, 0). Finally, the Fe-BPNT (9, 0) and Fe-CNT (9, 0) have acceptable potential for delivering the Chloroquine as anti-Coronavirus drug and Fe-BPNT (9, 0) and Fe-CNT (9, 0) can propose as suitable materials for drug delivery.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 18","pages":"6515 - 6523"},"PeriodicalIF":2.8,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142679659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Recent Progress in Silicon Quantum Dots Sensors: A Review 硅量子点传感器的最新进展：综述

IF 2.8 3区材料科学

Silicon Pub Date : 2024-10-14 DOI: 10.1007/s12633-024-03170-x

S. Sreejith, J. Ajayan, J. M. Radhika, N. V. Uma Reddy, M. Manikandan, Jimsha K. Mathew

引用次数: 0

Enhancing Water Deficit Stress Tolerance in Wheat: Synergistic Effects of Silicon Nanoparticles and Plant Growth-Promoting Bacteria 增强小麦对缺水胁迫的耐受性：纳米硅颗粒与植物生长促进细菌的协同效应

IF 2.8 3区材料科学

Silicon Pub Date : 2024-10-14 DOI: 10.1007/s12633-024-03164-9

Faezeh Davoudi, Mahboobeh Jalali, Keyvan Valizadeh-Rad, Hassan Etesami

{"title":"Enhancing Water Deficit Stress Tolerance in Wheat: Synergistic Effects of Silicon Nanoparticles and Plant Growth-Promoting Bacteria","authors":"Faezeh Davoudi, Mahboobeh Jalali, Keyvan Valizadeh-Rad, Hassan Etesami","doi":"10.1007/s12633-024-03164-9","DOIUrl":"10.1007/s12633-024-03164-9","url":null,"abstract":"<div>Water deficit stress significantly reduces grain yield in bread wheat, requiring improved tolerance in cultivars. Despite recent breeding advancements, enhancing tolerance remains crucial. Plant growth-promoting bacteria (PGPB) and silicon (Si) independently boost drought resistance through different mechanisms, but their combined effects are understudied. This research explored the combined impacts of silicon dioxide nanoparticles (SiO2 NPs) and native PGPB on wheat's morphophysiological and nutritional responses under water deficit stress. The study tested various SiO2 NPs concentrations (control, soil application of 100 and 200 mgkg−1, and foliar application of 200 mgkg−1) and PGPB strains (no bacterium, Pseudomonas fluorescens p-187, and Pseudomonas putida p-168). Results showed that SiO2 NPs significantly improved wheat tolerance to water stress, increasing shoot dry weight by 4.40 g/pot with 100 mgkg−1 SiO2NPs and Pseudomonas fluorescens p-187 compared to the control, and root dry weight by 1.05 g pot−1 with foliar application of 200 mgkg−1 SiO2 NPs and Pseudomonas putida p-168. SiO2 NPs and PGPB also boosted N, P, K, and Si concentrations in wheat shoots, reduced malondialdehyde content, and increased superoxide dismutase and glutathione peroxidase activities. The best performance was achieved with 200 mgkg−1 SiO2 NPs and Pseudomonas fluorescens p-187. The study confirms that combining SiO2 NPs sources with PGPB effectively enhances wheat's drought tolerance. This synergistic approach offers an environmentally sustainable strategy to bolster crop resilience against water deficit stress, ensuring better wheat yield in drought-prone conditions.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 18","pages":"6525 - 6540"},"PeriodicalIF":2.8,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142679660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Determination of Zeolite NaA (LTA) Synthesis Parameters from Technogenic Silica Gel for Water Softening 从用于软化水的技术硅胶中确定沸石 NaA（LTA）的合成参数

IF 2.8 3区材料科学

Silicon Pub Date : 2024-10-14 DOI: 10.1007/s12633-024-03177-4

Igor N. Pyagay, Yana A. Svakhina, Marina E. Titova, Victoria R. Dronova, Vladimir V. Miroshnichenko

{"title":"Determination of Zeolite NaA (LTA) Synthesis Parameters from Technogenic Silica Gel for Water Softening","authors":"Igor N. Pyagay, Yana A. Svakhina, Marina E. Titova, Victoria R. Dronova, Vladimir V. Miroshnichenko","doi":"10.1007/s12633-024-03177-4","DOIUrl":"10.1007/s12633-024-03177-4","url":null,"abstract":"<div>Utilization of fluoride-containing waste from aluminium fluoride production is an important strategic issue. Here, we use technogenic silica gel containing about 30 wt. % of fluoride and aluminum for zeolite NaA (LTA) synthesis. The process consists of two steps: silica gel acid purification up to a silica content of 95 wt. % and hydrothermal synthesis. X-ray diffraction (XRD), scanning electron microscopy (SEM), and Fourier transform infrared (FTIR) spectroscopy were used for phase identification and synthesis conditions optimization. As a result, we determined that hydrothermal synthesis from aluminosilicate gel with molar ratios SiO2:Al2O3 = 1.8, Na2O:Al2O3 = 4.0, and H2O:SiO2 = 50 at 95 °C for 60 min with vigorous stirring yields zeolite NaA with Ca2+ and Mg2+ ion exchange capacities of 562.6 and 187.5 mEq/100 g respectively and water vapor capacity of 25.8 g/100 g. Thus, the developed process offers waste silica gel utilization and production of zeolite NaA, which is as good as commercial analogs.<h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 18","pages":"6499 - 6514"},"PeriodicalIF":2.8,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142679658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Shaping the Future: Innovations in Silicon Wafer Production and Finishing 塑造未来：硅晶片生产和精加工的创新

IF 2.8 3区材料科学

Silicon Pub Date : 2024-10-12 DOI: 10.1007/s12633-024-03168-5

Shagun Kainth, Piyush Sharma, P.K. Diwan, O.P. Pandey

{"title":"Shaping the Future: Innovations in Silicon Wafer Production and Finishing","authors":"Shagun Kainth, Piyush Sharma, P.K. Diwan, O.P. Pandey","doi":"10.1007/s12633-024-03168-5","DOIUrl":"10.1007/s12633-024-03168-5","url":null,"abstract":"<div>Silicon wafers are essential components in the production of various devices, including integrated circuits, microchips, and solar cells. The quality and characteristics of silicon wafers greatly influence the performance and reliability of these devices. Silicon wafers have been produced through processes like the Czochralski method, which involves growing a single crystal ingot of silicon and then slicing it into thin wafers. While effective, these methods have limitations in terms of scalability, cost, and uniformity. Recent advancements in silicon wafer production focus on improving efficiency, reducing costs, and enhancing quality. The innovations in silicon wafer production and finishing have significant implications for various industries, including electronics, telecommunications, automotive, and renewable energy. This article provides an overview of the production of high-purity silicon, a vital component in semiconductor device manufacturing. A comprehensive description related to the extraction of silicon from silica, the refinement of metallurgical grade silicon (MGS) to achieve high purity. Additionally, the article covers various processes involved in silicon wafer manufacturing, including cutting, shaping, polishing, and cleaning, and explores advancements in technology that could enhance wafer manufacturing capabilities.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 18","pages":"6479 - 6497"},"PeriodicalIF":2.8,"publicationDate":"2024-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142679517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of Impurities Distribution on the mc-Si Ingot Grown by the Silicon Nitride Coated Carbon Crucible: Numerical Simulation 氮化硅涂层碳坩埚生长的微晶硅锭上的杂质分布研究：数值模拟

IF 2.8 3区材料科学

Silicon Pub Date : 2024-10-11 DOI: 10.1007/s12633-024-03171-w

P. Periyannan, P. Karuppasamy, N. Balamurugan, P. Ramasamy

{"title":"Investigation of Impurities Distribution on the mc-Si Ingot Grown by the Silicon Nitride Coated Carbon Crucible: Numerical Simulation","authors":"P. Periyannan, P. Karuppasamy, N. Balamurugan, P. Ramasamy","doi":"10.1007/s12633-024-03171-w","DOIUrl":"10.1007/s12633-024-03171-w","url":null,"abstract":"<div>The multi-crystalline silicon (mc-Si) ingot quality is mainly influenced by the generation of impurities and their diffusion. A transient global simulation helps to study the impurities distribution in the grown mc-Si ingot. In this work, crucible materials such as quartz and carbon are used to grow mc-Si ingots, and the impurities distribution of both silicon ingots are analyzed. Non-metallic impurities such as oxygen, and carbon are the major impurities formed in the silicon crystal during the directional solidification (DS) process. These impurities arise from the parts of the furnace and are segregated partly into the mc-Si ingot. The impurities such as oxygen and carbon were analyzed at the melt-crystal interface as well as in grown mc-Si ingots. Further, the gaseous impurities such as silicon monoxide and carbon monoxide are analyzed in the melt-free surface. The solar cell performance mainly depends on the quality of the silicon ingot. The mc-Si ingot grown by silicon nitride-coated carbon crucible gives better quality for photovoltaic industries.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 18","pages":"6453 - 6463"},"PeriodicalIF":2.8,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142679798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0