IF 2.8 3区材料科学

Silicon Pub Date : 2025-03-28 DOI: 10.1007/s12633-025-03298-4

Sahar Amiri

{"title":"Enhancement of Hydrophobic and Anti-Corrosive Performance of Epoxy Coatings Based on Graphene Oxide and Nano-Silica/Graphene Oxide Hybrid","authors":"Sahar Amiri","doi":"10.1007/s12633-025-03298-4","DOIUrl":"10.1007/s12633-025-03298-4","url":null,"abstract":"<div>In this study, we developed a fluorine-free hydrophobic and anti-corrosion coatings using epoxy resin (EP) containg SiO2 nanoparticles, mercaptobenzimidazole (MBT) and graphene oxide (GO) nanoparticles which was synthesized via sol–gel method. Hybrid network was characterized by Fourier transform infrared (FTIR), scanning electron microscope (SEM), energy-dispersive spectroscopy (EDS), pull off and salt spray. Structural properties of obtained coatings demonstrated uniform distribution and dispersion with nano-sized inorganic particles and contact angle tests demonstrated that increasing the GO, which is associated with a decrease in surface energy, increased the coatings' oleophobicity. Pull off test showed that the adhesion strength in case of textured and non-textured surfaces were 4.2 MPa and 2.46 MPa, respectively. Results indicated that adhesion strength of the coating increased due to surface texturing of obtained coating. Salt spray results suggest a significant improvement in the barrier performance of EP coatings through the addition of SiO2/GO nanohybrids. By increasing the GO and GO/SiO2 content of the fluorine chains, the resistance to corrosion, Taber abrasion, and hydrophobicity all increased dramatically.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 7","pages":"1657 - 1667"},"PeriodicalIF":2.8,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144125880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quaternary PMMA-PEG/SnO₂-SiC Nanocomposite Films for Flexible Nanodielectric and Energy Storage Applications 第四季PMMA-PEG/SnO₂-SiC纳米复合薄膜的柔性纳米介电和储能应用

IF 2.8 3区材料科学

Silicon Pub Date : 2025-03-28 DOI: 10.1007/s12633-025-03300-z

Zina Sattar, Ahmed Hashim

{"title":"Quaternary PMMA-PEG/SnO₂-SiC Nanocomposite Films for Flexible Nanodielectric and Energy Storage Applications","authors":"Zina Sattar, Ahmed Hashim","doi":"10.1007/s12633-025-03300-z","DOIUrl":"10.1007/s12633-025-03300-z","url":null,"abstract":"<div>The current work aims to enhance the microstructure and dielectric characteristics of SnO2-SiC NPs doped blended PMMA-PEG to apply in various flexible nanoelectronics and energy storage applications. The microstructure and dielectric characteristics of PMMA-PEG/SnO2-SiC films were studied. The investigation of microstructure properties for PMMA-PEG/SnO2-SiC films revealed a significant presence of SnO2-SiC NPs inside PMMA/PEG as well as good integration between SnO2-SiC NPs and PMMA-PEG matrix. The dielectric properties results indicated to the increment in dielectric parameters of blended PMMA-PEG as the content of SnO2-SiC NPs rise. The increment ratios of dielectric constant and conductivity of PMMA-PEG are 73% and 38%, respectively, with low values of dielectric loss ranging from 0.38 to 0.74 at 100 Hz. These findings indicated that PMMA-PEG/SnO2-SiC films could be useful in many nanoelectronics applications. The dielectric properties of PMMA-PEG/SnO2-SiC films altered as the frequency is rise. Because of their few cost, great capacity of energy storage, and low loss of energy, the PMMA-PEG/SnO2-SiC films have good dielectric properties to be employed in a wide range of flexible nanoelectronics applications. The pressure sensor results showed the PMMA/PEG/SnO2/SiC films included high sensitivity at pressure sensor ranging of 80 bar to 160 bar. By comparison of PMMA-PEG/SnO2-SiC films with other sensors, the fabricated films demonstrated great pressure sensitivity, excellent flexibility, and strong environmental durability.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 7","pages":"1681 - 1692"},"PeriodicalIF":2.8,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144125881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The Influence of Si/Al Ratio, Nanochannels Structure, and Atomic Composition On the Radiation Shielding Efficiency of Na-A and Na-Y Zeolite Frameworks Si/Al比、纳米通道结构和原子组成对Na-A和Na-Y分子筛骨架辐射屏蔽效率的影响

IF 2.8 3区材料科学

Silicon Pub Date : 2025-03-28 DOI: 10.1007/s12633-025-03305-8

Z. Y. Khattari

{"title":"The Influence of Si/Al Ratio, Nanochannels Structure, and Atomic Composition On the Radiation Shielding Efficiency of Na-A and Na-Y Zeolite Frameworks","authors":"Z. Y. Khattari","doi":"10.1007/s12633-025-03305-8","DOIUrl":"10.1007/s12633-025-03305-8","url":null,"abstract":"<div>In this study, we explore the photon attenuation properties of Na-A and Na-Y zeolite frameworks, focusing on the influence of their structural features, including Si/Al ratio, nanochannel size, and atomic composition. The mass attenuation coefficients (MAC), linear attenuation coefficients (LAC), and effective atomic number (Zeff) are analyzed across a broad photon energy spectrum (e.g., 0.015 < E < 15.0 MeV). The results show that Na-A framework has: 4.58 < MAC < 4.82 cm2/g, 6.95 < LAC < 7.27 cm−1, 0.100 < HVL < 0.095 cm, 11.31 < Zeff < 11.59; while Na-Y framework has: 4.37 < MAC < 4.62 cm2/g, 5.79 < LAC < 5.76 cm−1, HVL≈ 0.12 cm, 11.13 < Zeff < 11.41 at E = 15.0 keV. While, at E = 15.0 keV, Na-Y with a Si/Al ratio of 9.0 demonstrates the highest LAC value of 7.27 cm−1, surpassing Na-A (with LAC = 5.76 cm−1). A strong correlation is observed between APF and photon attenuation efficiency, with Na-Y framework denser structure with 2.52 < ρ < 2.50 g/cm3, and 0.050 < APF < 0.085 compared to Na-A with 2.20 < ρ < 2.07 g/cm3, 0.035 < APF < 0.062 contributing to better shielding performance. The findings indicate that the Si/Al ratio, nanochannel structure, and atomic composition are crucial factors in optimizing zeolite frameworks for radiation protection applications. This study provides insights into the structural design of zeolites for enhanced photon attenuation, offering a pathway for future applications in radiation shielding and related fields.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 7","pages":"1639 - 1656"},"PeriodicalIF":2.8,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144125879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Green Etching Technologies: Reducing NO2Emissions while Enhancing Solar Cell Efficiency in Industrial Silicon Wafer Etching 绿色蚀刻技术：在工业硅晶圆蚀刻中减少no2排放同时提高太阳能电池效率

IF 2.8 3区材料科学

Silicon Pub Date : 2025-03-26 DOI: 10.1007/s12633-025-03296-6

Mariyappan Raman, Sugunraj Sekar, Srinivasan Manickam, Keerthivasan Thamotharan, Ramasamy Perumalsamy

{"title":"Green Etching Technologies: Reducing NO2Emissions while Enhancing Solar Cell Efficiency in Industrial Silicon Wafer Etching","authors":"Mariyappan Raman, Sugunraj Sekar, Srinivasan Manickam, Keerthivasan Thamotharan, Ramasamy Perumalsamy","doi":"10.1007/s12633-025-03296-6","DOIUrl":"10.1007/s12633-025-03296-6","url":null,"abstract":"<div>Multi-crystalline Silicon (mc-Si) wafer’s surface texturing can increase solar cell’s conversion efficiency by lowering incident light reflectance. In this work, the optical characteristics of mc-Si wafers are enhanced through acid texturization. The major aim of this study is to reduce NO2 emissions. Instead of HNO3, we employed a combination of HF and H2O2, which are less hazardous chemical acids. This work highlights the benefits of using less hazardous and more affordable chemicals. Etching was carried out using a variety of chemical acids in different ratios. We prepared a 0.1 M solution of KMnO4 and used in HF: H2O2:KMnO4 in a 3:2:1 ratio. The outcomes of the 60-s etching process were compared with those of raw wafers. Optical microscopy, scanning electron microscope (SEM), UV–visible reflectance and lifetime measurements were used to examine the etched mc-Si wafer. The presence of H2O2 reduces the pollution and enhances the utilization of incident photons in solar cell applications.<h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 7","pages":"1601 - 1609"},"PeriodicalIF":2.8,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144125721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Preparation and Characterization of CaO-Al2O3-SiO2 Glass–Ceramic Microspheres from Coal-Based Solid Waste 煤基固体废弃物中CaO-Al2O3-SiO2玻璃陶瓷微球的制备与表征

IF 2.8 3区材料科学

Silicon Pub Date : 2025-03-25 DOI: 10.1007/s12633-025-03294-8

Runze Liu, Yi Guo, Haiqing Li, Zhu Chang, Hao Lu, Shuming Wang

{"title":"Preparation and Characterization of CaO-Al2O3-SiO2 Glass–Ceramic Microspheres from Coal-Based Solid Waste","authors":"Runze Liu, Yi Guo, Haiqing Li, Zhu Chang, Hao Lu, Shuming Wang","doi":"10.1007/s12633-025-03294-8","DOIUrl":"10.1007/s12633-025-03294-8","url":null,"abstract":"<div>To alleviate the environmental pollution caused by the stockpile of coal-based solid waste, glass–ceramic microspheres prepared by a simple and low-cost wet process with coal-based solid waste, and the effect of different solid waste content on the network structure and properties were investigated by X-ray diffraction (XRD), Fourier infrared spectroscopy (FTIR), Scanning electron microscopy (SEM) and Universal electronic testing machine. The results show that, with the diversification of coal-based solid waste content, the amount of anorthite crystalline, the glass network structure, and the main structure of glass Q3 changed also. Accordingly, significant changes have occurred in the properties of the crushing strength. Optimizing the raw material ratio, a coal-based solid waste glass–ceramic microsphere with unique network structure is well developed and the crushing strength reaches the maximum value of 221.23 N. The findings contribute significantly to improving the properties of matrix materials and the utilization of coal-based solid waste resources.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 7","pages":"1593 - 1600"},"PeriodicalIF":2.8,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144125713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synthesis and Gamma Irradiation Response of Chalcogenide Perovskite ZnSnS3 Thin Films 硫系钙钛矿ZnSnS3薄膜的合成及γ辐射响应

IF 2.8 3区材料科学

Silicon Pub Date : 2025-03-25 DOI: 10.1007/s12633-025-03297-5

Saad Aldawood, Syed Mansoor Ali, Hamood Kassim, Mohammad Saleh AlGarawi, Safar Saad AlGamdi, Ahmad Abdulkarim Alsaleh

{"title":"Synthesis and Gamma Irradiation Response of Chalcogenide Perovskite ZnSnS3 Thin Films","authors":"Saad Aldawood, Syed Mansoor Ali, Hamood Kassim, Mohammad Saleh AlGarawi, Safar Saad AlGamdi, Ahmad Abdulkarim Alsaleh","doi":"10.1007/s12633-025-03297-5","DOIUrl":"10.1007/s12633-025-03297-5","url":null,"abstract":"<div>Stable and Lead-free perovskites have grown to be considered encouraging materials for advanced applications due to their promising properties. In this investigation, we presented the synthesis and characterization of chalcogenides perovskite (ZnSnS3) for the gamma sensing application. The ZnSnS3 thin films that have been deposited following a two-step spin coating protocol have not yet been investigated. The trigonal phase of the polycrystalline nanostructure of the ZnSnS3 has been confirmed using X-ray diffraction (XRD). The optical band gap (2.46 eV) of the prepared film has been computed by reflectance spectroscopy, and wide photoluminescence (PL). The electrical properties were studied using a dark current–voltage (I–V) characteristic. In the forward bias, current values rise with increasing radiation dosage, though the turn-on potential goes down from 4.76 V to 4.11 V. The ideality factor of the ZnSnS3/p-Si-hetero-structure was larger than one. However, the saturation current, series resistance, and barrier height for the prepared hetero-structure alter with gamma radiation dose values due to the variation in the density of defect and charge carrier trapping at the interfacial layer. The overall radiation response of the ZnSnS3/p-Si hetero-structure system has been observed by gamma rays-induced carriers inside the depletion region at the interfaces. The responsivity of the thin films suggested that the prepared hetero-structure can be a potential candidate for radiation sensors and dosimeters.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 7","pages":"1583 - 1591"},"PeriodicalIF":2.8,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144125712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancement of Silicon Droplet Nitridation Process Through Pre-Nitriding Micron-Sized Silicon Powder 微米级硅粉预氮化强化硅滴氮化工艺

IF 2.8 3区材料科学

Silicon Pub Date : 2025-03-22 DOI: 10.1007/s12633-025-03295-7

Jinguang Yang, Ping Wu, Li Wang, Shiping Zhang

{"title":"Enhancement of Silicon Droplet Nitridation Process Through Pre-Nitriding Micron-Sized Silicon Powder","authors":"Jinguang Yang, Ping Wu, Li Wang, Shiping Zhang","doi":"10.1007/s12633-025-03295-7","DOIUrl":"10.1007/s12633-025-03295-7","url":null,"abstract":"<div>The nitridation of melted silicon powder in a suspended state represents a promising method for continuously synthesizing high-quality Si3N4 powders. Enhancing this method's efficiency and product quality hinges on effectively inhibiting the coalescence of silicon agglomerates post-melting, thereby preserving the suspended state and promoting Si–N interface integrity. This study introduces a pre-nitriding step at 1350°C, which forms a protective Si3N4 layer on silicon particle surfaces. This layer acts as a barrier, maintaining particle separation even after melting, ensuring stable gas–solid and gas–liquid interfaces during subsequent nitridation. Thermogravimetric analysis was utilized to investigate the process of pre-nitriding, melting and subsequent nitridation. By acting as an isolation layer, the Si3N4 layer inhibits melted Si particles from flowing and coalescing to maintain the gas–solid and gas–liquid interfaces. By pre-nitriding Si powder (D50 = 5.2 µm) and subsequently heating to 1450°C at 20°C/min, complete nitride was achieved in under 200 s, with a maximum conversion rate of 3.1%/s—a thousandfold increase compared to solid silicon nitriding at 1350°C. The nitriding products consist of submicron Si3N4 grains, with an α-phase Si3N4 content exceeding 80%. This breakthrough enables continuous, energy-efficient, high-yield synthesis of submicron α-Si3N4 powder via nitridation of micron-sized silicon powders under atmospheric nitrogen.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 7","pages":"1571 - 1582"},"PeriodicalIF":2.8,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144125733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A New Method for Producing Al–Si–Ca Alloys, AlF3, and MgF2 Using Diamond Wire Saw Si Powder and CaF2–MgO Waste Slag 利用金刚石线锯Si粉和CaF2-MgO废渣制备Al-Si-Ca合金、AlF3和MgF2的新方法

IF 2.8 3区材料科学

Silicon Pub Date : 2025-03-22 DOI: 10.1007/s12633-025-03287-7

Guangxiang Ming, Shijie Li, Yakun Zhang, Yun Lei, Yongsheng Ren, Guoqiang Lv, Kuixian Wei, Wenhui Ma

{"title":"A New Method for Producing Al–Si–Ca Alloys, AlF3, and MgF2 Using Diamond Wire Saw Si Powder and CaF2–MgO Waste Slag","authors":"Guangxiang Ming, Shijie Li, Yakun Zhang, Yun Lei, Yongsheng Ren, Guoqiang Lv, Kuixian Wei, Wenhui Ma","doi":"10.1007/s12633-025-03287-7","DOIUrl":"10.1007/s12633-025-03287-7","url":null,"abstract":"<div>Diamond wire saw Si powder (DWSSP) is a valuable secondary resource rich in Si, but it is also a hazardous air pollutant. CaF2–MgO waste slag containing F is produced during the steelmaking process. This study presents a new low–cost method for recovering both DWSSP and CaF2–MgO waste slag. The Al reduction smelting process was used to prepare Al–Si–Ca alloy, AlF3, and MgF2 from the CaF2–MgO slag and DWSSP, and these fluorides were volatilized under negative pressure (P = 2.46 × 104 Pa). Additionally, the study investigated the effects of holding time and CaF2–MgO slag compositions on O removal, preparation of Al–Si–Ca alloys. The results demonstrated that upon 120 min of smelting using solely CaF2 slag at 1450℃, the deoxygenation efficiency reached 99.89%, with the O concentration in the alloy being reduced to 170 ppmw. Compared to CaF2 slag, when CaF2–30 wt.% MgO slag was employed, the deoxygenation efficiency was enhanced to 99.98%, resulting in an O concentration of merely 24 ppmw in the alloy. The alloy produced using CaF2–12 wt.% MgO slag exhibited the highest Si extraction efficiency from DWSSP, reaching 93.65%. When using CaF2 slag, the products obtained were Al-Si-Ca alloy and AlF3. In contrast, the use of CaF2-MgO slag enabled the simultaneous preparation of Al-Si-Ca alloy, AlF3, and MgF2. Finally, the reaction mechanism of the approach was revealed through thermodynamic analysis.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 7","pages":"1555 - 1569"},"PeriodicalIF":2.8,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144125732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimization of Developed Memristive Silicon Nanowire using Heuristic Search Algorithms 用启发式搜索算法优化已开发的忆阻硅纳米线

IF 2.8 3区材料科学

Silicon Pub Date : 2025-03-21 DOI: 10.1007/s12633-025-03288-6

Hossein Rezaei Estakhroyeh, Mahdiyeh Mehran, Esmat Rashedi

{"title":"Optimization of Developed Memristive Silicon Nanowire using Heuristic Search Algorithms","authors":"Hossein Rezaei Estakhroyeh, Mahdiyeh Mehran, Esmat Rashedi","doi":"10.1007/s12633-025-03288-6","DOIUrl":"10.1007/s12633-025-03288-6","url":null,"abstract":"<div>This research objective is to optimize memristive systems based on the silicon nanowire and compare optimization models. The procedure begins with defining the memristor’s numerical model and investigating its distinct properties, such as current–voltage hysteresis loop and logarithmic current–voltage relationship, referred to as the memristor fingerprints. Then, heuristic search approaches such as the Real Genetic Algorithm (RGA), Gravitational Search Algorithm (GSA), and Particle Swarm Optimization (PSO) techniques are employed in the optimal selection of the geometrical features and input voltage specifications to achieve the desired memristive current–voltage hysteresis loop in the silicon nanowire (SiNW) through the optimization process. Live connection between MATLAB and COMSOL is employed to select the optimum values of the variables. However, although the results obtained for memristive silicon nano wire)M-SiNW( models vary in memristive current–voltage characteristics, consistent trends have been achieved across all models. Next, the effect of input signal frequency and amplitude on the M-SiNW models is examined. It is clear from the results that the proposed memristive silicon nanowire models are volatile, resistive nano-switches with flexible behavior that can be realized through manufacturing process compatible with the standard CMOS process. Finally, it is concluded that optimizing the geometrical properties of the SiNW to achieve the memristive behavior involves both similarities and differences compared to the traditional memristor characteristics, particularly regarding their applications in the volatile and non-volatile memory domains. In the conventional memristors such as silicon dioxide (SiO2), the formation of filament connections and current flow, relies on the conductive oxygen vacancies within the device; however, in the mentioned M-SiNW, charge carriers such as electrons and holes play these roles.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 7","pages":"1543 - 1553"},"PeriodicalIF":2.8,"publicationDate":"2025-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144125726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Luminescent Poly(siloxane-urethane) Composites Based on Various Phenyleuropiumsiloxanes: Synthesis and Properties 基于各种苯铕硅氧烷的发光聚硅氧烷-聚氨酯复合材料的合成与性能

IF 2.8 3区材料科学

Silicon Pub Date : 2025-03-21 DOI: 10.1007/s12633-025-03289-5

Eleonora E. Kim, Anastasia S. Belova, Lyubov V. Filimonova, Dmitry A. Khanin, Galina G. Nikiforova, Yuriy N. Kononevich, Olga I. Shchegolikhina, Aziz M. Muzafarov

引用次数: 0

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