IF 2.8 3区材料科学

Silicon Pub Date : 2025-02-24 DOI: 10.1007/s12633-025-03260-4

Srilali Siragam

引用次数: 0

Effect of Silicon Carbide Nanoparticles on the Mechanical, Barrier, Antibacterial and Biodegradable Properties of Pullulan/Lignin Bio Nanocomposite Blends for Food Packaging Applications 碳化硅纳米颗粒对食品包装用普鲁兰/木质素生物纳米复合材料的机械、阻隔、抗菌和可生物降解性能的影响

IF 2.8 3区材料科学

Silicon Pub Date : 2025-02-24 DOI: 10.1007/s12633-025-03265-z

Vishnuvarthanan Mayakrishnan, Raja Venkatesan, Maher M. Alrashed, Ramji Vaidhyanathan, Asha Anish Madhavan

{"title":"Effect of Silicon Carbide Nanoparticles on the Mechanical, Barrier, Antibacterial and Biodegradable Properties of Pullulan/Lignin Bio Nanocomposite Blends for Food Packaging Applications","authors":"Vishnuvarthanan Mayakrishnan, Raja Venkatesan, Maher M. Alrashed, Ramji Vaidhyanathan, Asha Anish Madhavan","doi":"10.1007/s12633-025-03265-z","DOIUrl":"10.1007/s12633-025-03265-z","url":null,"abstract":"<div><p>In this study, pullulan, lignin and silicon carbide-based bio nanocomposite films were prepared and characterized for food packaging applications. Pullulan/lignin bio nanocomposite films were prepared by solvent casting method with various wt% (0.1, 0.2, 0.3, 0.4 and 0.5) of silicon carbide. The structure and morphology of the prepared bio nanocomposite films were characterized by FT-IR and SEM. SEM analysis revealed that the silicon carbide was properly distributed in the pullulan/lignin matrix. The addition of silicon carbide to pullulan and lignin increased the density and decreased the porosity of the films. The moisture content of the films was also reduced by the addition of various concentrations of silicon carbide. The surface colour difference and opacity of the bio nanocomposite films increased from 48.06 to 71.50 and from 4.3% to 71.9%, respectively. The surface hydrophobicity of the bio nanocomposite films increased with the addition of silicon carbide and a maximum value of 84.2° was achieved for 0.5 wt%. The tensile strength of the films also increased from 6.12 MPa to 14.24 MPa. The addition of silicon carbide also reduced the oxygen transmission rate and water vapour transmission rate of the pullulan-based bio nanocomposite films. The films exhibited good antibacterial activity against <i>Staphylococcus aureus</i> and <i>Escherichia coli</i>, which was mainly attributed to the synergetic antibacterial action of lignin. In addition, the bio nanocomposite films have excellent biodegradability. This proves to be a novel research concept for environmental friendly greener packaging materials for active food packaging applications.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 5","pages":"1059 - 1075"},"PeriodicalIF":2.8,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143871232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design and Analysis of Passivated n-Si Solar Cell Employing SiC Window Layer 采用SiC窗层钝化n-Si太阳电池的设计与分析

IF 2.8 3区材料科学

Silicon Pub Date : 2025-02-24 DOI: 10.1007/s12633-025-03252-4

Sudipta Banerjee, Mukul K. Das, Tauseef Ahmed, Heranmoy Maity, Himadri Sekhar Das

{"title":"Design and Analysis of Passivated n-Si Solar Cell Employing SiC Window Layer","authors":"Sudipta Banerjee, Mukul K. Das, Tauseef Ahmed, Heranmoy Maity, Himadri Sekhar Das","doi":"10.1007/s12633-025-03252-4","DOIUrl":"10.1007/s12633-025-03252-4","url":null,"abstract":"<div><p>A comprehensive device simulation model for the n-type Passivated Emitter and Rear Cell (n-PERC) has been developed using Silvaco TCAD for conducting in-depth investigations into the intricate relationships between various materials and device parameters and their consequent impact on the overall performance characteristics of the solar cell. Important research is conducted to optimize several design parameters, including the base doping, the thickness of the emitter, the rear side contact to non-contact ratio and others, after identifying the possibility of a notable increase in the device's performance. The incorporation of hydrogenated silicon carbide (SiC:H), a wide bandgap material, as the window layer engenders a substantial enhancement in the electrical performance of the device. Due to its wider bandgap, SiC provides enhanced transparency, allowing photons to effectively reach the bulk. Additionally, SiC forms an effective heterojunction with Si, ensuring favorable band alignment that facilitates efficient carrier separation and transport. The author's exclusive emphasis on silicon carbide (SiC) as window layer and coupled with the meticulous adjustment of various design parameters such as doping of emitter and bulk layers, thickness of emitter and ratio of contact to non-contact area at rear side demonstrates that a significant enhancement in efficiency reaching up to 25.67% can be realized.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 5","pages":"1079 - 1089"},"PeriodicalIF":2.8,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143871230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Comprehensive Analysis of Recombination Characteristics Due to Illumination Under Elevated Temperature in Monocrystalline and Multicrystalline Wafers 单晶与多晶片高温光照复合特性的综合分析

IF 2.8 3区材料科学

Silicon Pub Date : 2025-02-19 DOI: 10.1007/s12633-025-03254-2

E. Resmi, K. P. Sreejith, Anil Kottantharayil

{"title":"Comprehensive Analysis of Recombination Characteristics Due to Illumination Under Elevated Temperature in Monocrystalline and Multicrystalline Wafers","authors":"E. Resmi, K. P. Sreejith, Anil Kottantharayil","doi":"10.1007/s12633-025-03254-2","DOIUrl":"10.1007/s12633-025-03254-2","url":null,"abstract":"<div><p>This work investigates the recombination characteristics of surface and bulk of industrial monocrystalline (c-Si) and multicrystalline (mc-Si) silicon wafers subjected to illuminated annealing at 75 °C. Variations in open circuit photoluminescence (PL) intensity and effective lifetime reveal that the degradation and regeneration behavior of the samples varies based on the bulk quality. The regeneration in PL intensity and effective minority carrier lifetime is relatively lower in mc-Si samples than in c-Si samples due to the high density of bulk defects. Further, the analysis of surface and bulk recombination characteristics reveals that the response of emitter surface and bulk are different during illuminated annealing. The bulk component dominates overall recombination characteristics and subsequently affects the performance parameters of the solar cells. It shows an initial degradation within 24 h followed by regeneration as light soaking duration increases. In contrast, light soaking beyond 24 h resulted in higher surface recombination in c-Si samples, indicating the possible formation of LeTID defects. However, no such degradation in the emitter surface is observed in mc-Si even after light soaking for 125 h, suggesting the absence of LeTID-related defect formation at the emitter surface. The observed trend in quantum efficiency (QE) agrees with the recombination parameters at the surface and within the bulk of the device.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 5","pages":"1035 - 1045"},"PeriodicalIF":2.8,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143871395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of Nano-SiO2 Modified Power Capacitor Insulating Oil Behavior in Micro-Water Environments at Different Temperatures 纳米sio2改性电力电容器绝缘油在不同温度微水环境中的性能研究

IF 2.8 3区材料科学

Silicon Pub Date : 2025-02-19 DOI: 10.1007/s12633-025-03251-5

Yi Li, Zhiyi Pang, Jiwen Huang, Rui Qin

引用次数: 0

The effect of the Connection of Linear Zones on their Transformation during Thermomigration through a Silicon Wafer (100) 硅晶片热迁移过程中线性区连接对其转变的影响（100）

IF 2.8 3区材料科学

Silicon Pub Date : 2025-02-18 DOI: 10.1007/s12633-025-03255-1

Boris M. Seredin, Victor P. Popov, Alexander V. Malibashev, Artem D. Stepchenko, Marina B. Zinenko

{"title":"The effect of the Connection of Linear Zones on their Transformation during Thermomigration through a Silicon Wafer (100)","authors":"Boris M. Seredin, Victor P. Popov, Alexander V. Malibashev, Artem D. Stepchenko, Marina B. Zinenko","doi":"10.1007/s12633-025-03255-1","DOIUrl":"10.1007/s12633-025-03255-1","url":null,"abstract":"<div><p>The transformation of closed linear zones in the process of thermomigration is associated with the difference in the conditions of dissolution of an anisotropic crystal on the outer and inner contours of the zone. The connection of linear zones changes the dissolution conditions on these contours and affects the shape of the zone and the resulting epitaxial channel. Using the example of the silicon-aluminum system, the effect of connecting a segment of a linear zone at right angles with zones of various shapes: circular, square and rectilinear on their transformation when passing through a silicon wafer (100) was experimentally studied. It was found that the adjacency from inside the closed zone does not affect its transformation, and the adjacency from the outside eliminates the characteristic transformation, ensures the migration of the zone in the direction of the temperature gradient and causes a possible rupture of the zone at the adjacency. For a rectilinear zone, the adjacency causes the zone to shift towards the adjacent segment. An explanation of the mechanism of the detected effect is given, based on taking into account the vector nature of the forces of resistance to movement in various sections of the dissolution front of the zone.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 5","pages":"1019 - 1024"},"PeriodicalIF":2.8,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143871360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Top Cooling and Heat Transfer Dynamics in the Growth of Large Silicon Crystals Using the CZ Method 用CZ法研究大硅晶体生长过程中的顶部冷却和传热动力学

IF 2.8 3区材料科学

Silicon Pub Date : 2025-02-17 DOI: 10.1007/s12633-025-03250-6

Yi-Jen Huang, Amir Reza Ansari Dezfoli

引用次数: 0

Correction to: DNA Nucleobase Interaction with Silicon Carbide Nanosheet 修正：DNA核碱基与碳化硅纳米片的相互作用

IF 2.8 3区材料科学

Silicon Pub Date : 2025-02-17 DOI: 10.1007/s12633-025-03230-w

A. A. Menazea, Nasser S. Awwad, Hala A. Ibrahium, M. Derakh, Mohammed H. Alqahtani

引用次数: 0

Nano Silica as a Catalyst for Efficient and Green Synthesis of Imidazole Derivatives: Exploring Catalytic, Photophysical, and Nonlinear Optical Properties 纳米二氧化硅作为高效绿色合成咪唑衍生物的催化剂：探索催化、光物理和非线性光学性质

IF 2.8 3区材料科学

Silicon Pub Date : 2025-02-16 DOI: 10.1007/s12633-025-03241-7

TS. Rajasekar, K. Jayamoorthy, Natesan Srinivasan, D. Ramachandran

{"title":"Nano Silica as a Catalyst for Efficient and Green Synthesis of Imidazole Derivatives: Exploring Catalytic, Photophysical, and Nonlinear Optical Properties","authors":"TS. Rajasekar, K. Jayamoorthy, Natesan Srinivasan, D. Ramachandran","doi":"10.1007/s12633-025-03241-7","DOIUrl":"10.1007/s12633-025-03241-7","url":null,"abstract":"<div><p>This manuscript presents a comprehensive investigation into the catalytic efficiency of nano silica (SiO<sub>2</sub>) in the synthesis of imidazole derivatives, showcasing its ability to enhance reaction efficiency, yield, and product purity. Employing nano SiO<sub>2</sub> as a catalyst in multi-component reactions, we achieved significant improvements over conventional methods. Detailed characterization of the synthesized imidazoles using NMR spectroscopy provided insights into molecular structures, atom numbering, and proton assignments. Solvent studies revealed that polarity influences absorption and emission spectra, resulting in bathochromic shifts attributed to electronic transitions and solvent interactions. Second harmonic generation (SHG) analysis demonstrated the nonlinear optical (NLO) properties of the derivatives, emphasizing their potential in NLO material applications. Quantum yield measurements, emission kinetics, and density functional theory (DFT) analyses—including HOMO–LUMO energies and molecular electrostatic potential (MEP) mapping—highlighted the compounds’ electronic properties and charge distributions. These findings underscore the effectiveness of nano SiO<sub>2</sub> as a catalyst for sustainable, high-yield imidazole synthesis, with far-reaching implications for materials science and pharmaceutical applications.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 5","pages":"997 - 1008"},"PeriodicalIF":2.8,"publicationDate":"2025-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143871357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Review of Research on Coordinated Air Pollution Control and Carbon Dioxide Reduction in the Silicon Industry: Coordinated Accounting and Emission/Control 硅工业大气污染控制与二氧化碳减排研究综述：协调核算与排放/控制

IF 2.8 3区材料科学

Silicon Pub Date : 2025-02-15 DOI: 10.1007/s12633-025-03228-4

Yuanxiang Chen, Rui Xu, Guangfei Qu, ZhiShunCheng Li, Yixin Yang, KeYi Xiang, JunYan Li

{"title":"A Review of Research on Coordinated Air Pollution Control and Carbon Dioxide Reduction in the Silicon Industry: Coordinated Accounting and Emission/Control","authors":"Yuanxiang Chen, Rui Xu, Guangfei Qu, ZhiShunCheng Li, Yixin Yang, KeYi Xiang, JunYan Li","doi":"10.1007/s12633-025-03228-4","DOIUrl":"10.1007/s12633-025-03228-4","url":null,"abstract":"<div><p>In the industrial production of silicon, including the combustion, utilization of fossil fuels and electricity consumption represents a significant source of both air pollutants and CO<sub>2</sub> emissions. It is logical to implement co-control, given that CO<sub>2</sub> and air pollutants have a common source. Nevertheless, there has been a paucity of studies examining the synergistic mechanisms and technical pathways for the prevention and substantial reduction of air pollution and carbon emissions in the silicon industry. It is therefore crucial to gain a comprehensive understanding of the formation mechanisms and treatment status of air pollutants and CO<sub>2</sub> in the silicon industry, with a view to identifying effective and rational co-control technologies that can be deployed in the industry in order to achieve effective control. This paper presents an analysis of the emission characteristics and correlations of air pollutants and CO<sub>2</sub> in the production process of industrial silicon. The possibility of creating an emission inventory of air pollutants and CO<sub>2</sub> in the silicon industry has been considered. This paper analyses and summarizes technical measures for the synergistic control of air pollutants and CO<sub>2</sub> from three perspectives: source control, process management, and end-of-pipe management. It then specifically analyses the synergistic emission reduction benefits of five types of mainstream technical measures using Chinese industrial silicon enterprises as case studies. The aim of this review is to provide some references for subsequent related research in the co-control of air pollutants and CO<sub>2</sub> in industrial silicon enterprises.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 5","pages":"935 - 951"},"PeriodicalIF":2.8,"publicationDate":"2025-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143871355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

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