SiliconPub Date : 2025-07-22DOI: 10.1007/s12633-025-03402-8
Rayabarapu Venkateswarlu, Bibhudendra Acharya, Ashish Kumar, Guru Prasad Mishra
{"title":"Comprehensive Investigation of influence of Short Channel Effects in Al2O3/HfO2 AlGaN/GaN MOSHEMTs","authors":"Rayabarapu Venkateswarlu, Bibhudendra Acharya, Ashish Kumar, Guru Prasad Mishra","doi":"10.1007/s12633-025-03402-8","DOIUrl":"10.1007/s12633-025-03402-8","url":null,"abstract":"<div><p>Short-channel effects (SCEs) significantly impact the performance of MOSHEMTs by degrading their electrostatic control and increasing leakage currents. Physics-based and charge-based models are useful to comprehend the physical charge flow mechanism along the channel in AlGaN/GaN metal-oxide semiconductors (MOSHEMTs). An innovative double π-gate engineering technique is proposed for short channel devices to address surface potential ambiguities and peak electric field phenomenon in the channel. To suppress surface traps, deep-level traps, and hot electron trapping/de-trapping in the gate-drain access region, a double layer of high-k insulators of Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> is implemented. The proposed structure reduces the negative hysteresis at high drain bias. The proposed structure also trades off the traps by peak electric field redistribution and reducing hot electrons. It also offers the cut-off frequency (f<sub>T</sub>)/maximum operating frequency (f<sub>max</sub>) of 363/461 GHz respectively.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 13","pages":"3101 - 3112"},"PeriodicalIF":3.3,"publicationDate":"2025-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145135157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
SiliconPub Date : 2025-07-22DOI: 10.1007/s12633-025-03383-8
Ali Nadi Kaplan, Mevlüt Yunus Kayacan, Merdan Ozkahraman
{"title":"Response surface methodology-based experimental and statistical analysis of polyester resin composites reinforced with silicon carbide and alumina powders","authors":"Ali Nadi Kaplan, Mevlüt Yunus Kayacan, Merdan Ozkahraman","doi":"10.1007/s12633-025-03383-8","DOIUrl":"10.1007/s12633-025-03383-8","url":null,"abstract":"<div><p>In this study, polyester resin composites were reinforced with varying ratios of Aluminum Oxide (Al<sub>2</sub>O<sub>3</sub>) and Silicon Carbide (SiC) powders, and their mechanical properties were systematically investigated. The composite samples were subjected to compressive strength tests and Specific Energy Absorption (SEA) evaluations. The Response Surface Methodology (RSM) was employed to perform a statistical analysis of the experimental results, allowing for the determination of significant factors and their interactions. The compressive strength of the composites was found to be significantly influenced by the content of Al<sub>2</sub>O<sub>3</sub> with the highest compressive strength observed at a composition of 95% resin, 1.66% SiC, and 3.33% Al<sub>2</sub>O<sub>3</sub>, yielding a maximum stress of 8895.48 MPa. Similarly, the SEA results demonstrated that the addition of 3.33% Al<sub>2</sub>O<sub>3</sub> and 6.66% SiC led to a remarkable improvement in energy absorption capabilities, achieving an SEA value of 73.20 J/kg. The statistical analysis confirmed the significance of both the individual and interaction effects of the filler materials, with p-values indicating high significance (<i>p</i> < 0.05). The developed models exhibited high accuracy with R<sup>2</sup> values of 0.9245 for compressive strength and 0.9492 for SEA, suggesting the reliability of the experimental data. These findings underline the potential of using ceramic powders like Al<sub>2</sub>O<sub>3</sub> and SiC in enhancing the mechanical performance of polyester resin composites, making them suitable for high-performance applications.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 13","pages":"3071 - 3086"},"PeriodicalIF":3.3,"publicationDate":"2025-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145135145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
SiliconPub Date : 2025-07-21DOI: 10.1007/s12633-025-03384-7
Mohamed Ali Boutabba, Mohamed Yacine Debili, Fahima Layachi
{"title":"Diamond and silicon carbide synthesis by direct CO2 capture in open air rapidly solidified Al (11wt.%Cu)","authors":"Mohamed Ali Boutabba, Mohamed Yacine Debili, Fahima Layachi","doi":"10.1007/s12633-025-03384-7","DOIUrl":"10.1007/s12633-025-03384-7","url":null,"abstract":"<div><p>Using high-frequency induction fusion and rapid solidification under atmospheric pressure, we synthesized an Al–11 wt.% Cu alloy at ~ 800 °C for 30 min. A bimodal microstructure of silicon carbide (SiC) and diamond particles was observed, despite the absence of silicon or carbon in the initial melt. We hypothesize that carbon originated from atmospheric CO₂ absorbed during melting, while silicon likely derived from aluminum via in-situ transformation. This CO₂-induced carbonization led to the formation of SiC within the aluminum matrix, significantly enhancing the alloy’s mechanical and wear-resistant properties. Unlike conventional methods that introduce diamond externally, our process enables in-situ diamond and SiC formation during melting, offering a novel, sustainable pathway for CO₂ utilization. This approach not only improves material performance but also contributes to carbon capture and conversion at ambient pressure.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 13","pages":"3057 - 3069"},"PeriodicalIF":3.3,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145135143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
SiliconPub Date : 2025-07-21DOI: 10.1007/s12633-025-03387-4
Zijun Liu, Tingting Chu, Yinli Hao, Yimin Wang
{"title":"Fluorescent Silicon-Based Nanocarriers for Drug Delivery in Acute Myocardial Infarction","authors":"Zijun Liu, Tingting Chu, Yinli Hao, Yimin Wang","doi":"10.1007/s12633-025-03387-4","DOIUrl":"10.1007/s12633-025-03387-4","url":null,"abstract":"<div><p>Acute myocardial infarction (AMI) results from acute coronary artery occlusion, leading to myocardial ischemia and necrosis. Ciprofol, an intravenous anesthetic, has antioxidant, anti-lipid peroxidation, anti-calcium overload, and anti-inflammatory properties. Effective drug delivery systems are crucial for addressing myocardial ischemia–reperfusion injury (MIRI). In this study, we developed an efficient composite drug delivery system by combining the high surface area of metal–organic frameworks (MOFs) with the biocompatibility and fluorescence properties of silica-based materials. We modified (3-aminopropyl)trimethoxysilane (APTMS) with compound 1 to create the APTMS-1@CP1 composite, which effectively encapsulates and transports Ciprofol. The composite exhibited strong fluorescence with peaks at 326 nm and 450 nm, a BET surface area of 689.7 m<sup>2</sup>/g, and a pore size of 5.1 nm, confirming its suitability for drug delivery. The drug loading capacity and controlled release properties were excellent, and fluorescence cycling tests showed no significant intensity decrease after five cycles, ensuring stability. The nitrogen adsorption/desorption isotherms indicated mesoporous material behavior, facilitating efficient encapsulation. In a H9c2 cell model of MIRI, pretreatment with APTMS-1@CP1@Ciprofol significantly restored cell viability compared to the MIRI group. The composite also reduced malondialdehyde (MDA) levels and inflammatory markers (IL-6, TNF-α), demonstrating its potential in alleviating oxidative stress and inflammation. These findings underscore the composite’s potential for treating cardiovascular diseases, especially myocardial ischemia–reperfusion injury, due to its high drug loading, controlled release, and therapeutic efficacy.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 13","pages":"3045 - 3055"},"PeriodicalIF":3.3,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145135161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
SiliconPub Date : 2025-07-21DOI: 10.1007/s12633-025-03391-8
M. Jlassi, I. Ben Miled, I. Sta, M. Zouaoui
{"title":"Fabrication and Characterization of Nanostructured Cadmium Oxide Thin Films Doped with Indium by Sol–Gel Spin-Coating for CdO (n)/Si (p) Heterojunction Photodiode Applications","authors":"M. Jlassi, I. Ben Miled, I. Sta, M. Zouaoui","doi":"10.1007/s12633-025-03391-8","DOIUrl":"10.1007/s12633-025-03391-8","url":null,"abstract":"<div><p>In this study, nanostructured thin films based on cadmium oxide doped with Indium (CdO:In) were fabricated by sol–gel spin-coating technique on p-type monocrystalline silicon (c-Si) for the integration in n-p heterojunction photodiode applications. A comprehensive analysis of structural, morphological, compositional, optical and electrical properties of the surface of undoped CdO and CdO:In films on silicon substrates was conducted. The doping of CdO films with Indium by incorporating In<sup>3+</sup> ions maintained a nanocrystalline network in a cubic structure with reduced average grain size and smooth heterointerface with the c-Si substrate. The anti-reflection role of undoped CdO and doped CdO:In was validated through lower optical reflectance compared to the bare Si substrate, especially in short wavelength range. The electrical current–voltage I-V characteristics, measured in the dark and under illumination, were used to determine the main diode parameters of different CdO (n)/ c-Si (p) heterojunction structures. Compared to undoped CdO thin films, In-doping of CdO lead to higher ideality factor and reverse saturation current, but lower potential barrier and series resistance. Higher photogenerated current at the Si region with more light sensitivity was obtained in the CdO:In/Si diode owing to better transparency and wider bandgap than the undoped CdO film.Whereas, lower conduction band offset at the CdO:In/Si heterojunction enabled an improvement in charge carrier transport in the CdO:In/Si diode compared to the CdO/Si diode. Our results demonstrate the effective integration of nanostructured In-doped CdO thin films in CdO/Si n-p heterojunction photodiode applications.\u0000</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 13","pages":"3033 - 3044"},"PeriodicalIF":3.3,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145135160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
SiliconPub Date : 2025-07-19DOI: 10.1007/s12633-025-03382-9
Fei Li, Jian Qiao
{"title":"Extraction of Silica From Micro-silica and Preparation of Silica Aerogels","authors":"Fei Li, Jian Qiao","doi":"10.1007/s12633-025-03382-9","DOIUrl":"10.1007/s12633-025-03382-9","url":null,"abstract":"<div><p>The choice of silica-based precursors has an important impact on silica (SiO<sub>2</sub>) aerogel materials. The main objective of this study is to explore a new route for the preparation of SiO<sub>2</sub> aerogels using micro-silica. Firstly, the difference in silica extraction rate between micro-silica and quartz and analytically pure SiO<sub>2</sub> under different conditions, and analyzed the reasons for the difference from the aspect of raw materials. Secondly, the SiO<sub>2</sub> was extracted by a low-temperature alkaline melting method using micro-silica as the silicon source, avoiding the disadvantages of the fire method and the wet method, and the SiO<sub>2</sub> aerogel was synthesized by drying under atmospheric pressure. The result shows the extraction rate of micro-silica was up to 94.2% comparing with the quartz and analytically pure SiO<sub>2</sub>. It found that a high extraction rate and modulus of silica resources could be obtained at a mass ratio of NaOH to micro-silica of 1.4, a calcination temperature of 450 °C, and a calcination time of 60 min. The prepared SiO<sub>2</sub> aerogel had a typical nanoporous structure, with a density of 0.1421 g/cm<sup>3</sup>, a specific surface area of 236 m<sup>2</sup>/g, a porosity of 93.54%, and a thermally stable temperature of 400 °C, under 800 °C, the aerogel skeleton structure remains unchanged. This study gives a new way for exploring the high-value utilization of industrial solid waste.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 12","pages":"3007 - 3016"},"PeriodicalIF":3.3,"publicationDate":"2025-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145073632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
SiliconPub Date : 2025-07-19DOI: 10.1007/s12633-025-03390-9
Mohammad Kangooie, Reza Eslami-Farsani
{"title":"The Effect of the Percentage of Reinforcing Basalt Fibers on the Microstructure and Mechanical Properties of the Al-7Si-0.3Mg Matrix Composite Fabricated by the Thixomixing","authors":"Mohammad Kangooie, Reza Eslami-Farsani","doi":"10.1007/s12633-025-03390-9","DOIUrl":"10.1007/s12633-025-03390-9","url":null,"abstract":"<div><p>Semi-solid casting is an advanced technique for fabricating aluminum components with enhanced mechanical properties. In this study, basalt fibers at volume fractions of 0, 2, 4, and 6% were uniformly dispersed within semi-solid A356 aluminum alloy to produce metal matrix composites. The fabrication was performed using an improved thixomixing method, a novel semi-solid processing technique that effectively overcomes poor fiber-matrix adhesion without relying on conventional fiber coatings or in-situ chemical treatments. This method employs shear forces to achieve uniform dispersion of basalt fibers within the semi-solid aluminum, facilitating the formation of intermetallic compounds at the fiber/matrix interface and thereby enhancing interfacial bonding. Semi-solid temperatures of 575 and 585 °C were selected for comparative analysis. The resulting composites were evaluated through shear punch tests, hardness measurements, compression testing, and microstructural characterization. The composite containing 6 vol.% basalt fibers cast at 575 °C exhibited the highest performance, with shear strength, hardness, and compression strength reaching 132 MPa, 71.3 Hb, and 458 MPa, respectively. Microstructural investigations revealed that the formation of intermetallic phases on the basalt fiber surfaces, along with the development of globular α-Al and non-dendritic Si-Al phases within the matrix, played a pivotal role in improving mechanical properties. This semi-solid continuous casting approach presents a promising route to fabricate high-performance composites with superior strength-to-weight ratios, offering a viable alternative to conventional metal components.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 12","pages":"2991 - 3005"},"PeriodicalIF":3.3,"publicationDate":"2025-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145073633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
SiliconPub Date : 2025-07-18DOI: 10.1007/s12633-025-03400-w
A. F. Qasrawi
{"title":"Enhanced Dielectric Properties, and Optical Conduction of Amorphous Silicon Thin Films via Ag₂O Coatings","authors":"A. F. Qasrawi","doi":"10.1007/s12633-025-03400-w","DOIUrl":"10.1007/s12633-025-03400-w","url":null,"abstract":"<div><p>Herein, amorphous silicon (a-Si) thin films are coated with Ag<sub>2</sub>O films of thickness of 100 nm and 500 nm by the thermal evaporation technique for the purpose of enhancing their dielectric and optical conduction properties. The structural and morphological studies on the a-Si/Ag<sub>2</sub>O films (a-SA-xx; xx is the thickness of Ag<sub>2</sub>O layer) have shown the preferred growth of hexagonal Ag<sub>2</sub>O onto a-Si with increased strained structure. The increased oxide layers thickness change the morphology from spherical grains to resembling interconnects as a wavy networks organized in a hexagonal or quasi regular patterns. Ag<sub>2</sub>O coating remarkably induced the free carrier absorption in the infrared range of light, redshifted the energy band gap, increased the light absorption by 24 times, enhanced the dielectric constant by ~ 100% in a-SA-100 and 4000% in a-SA-500 films. The optical conductivity of a-Si is improved ~ 26 and 132 times in the IR range. In addition, treating a-SA-xx films as optical filters workable as terahertz band filters have shown their ability to perform as electro-optical systems exhibiting enhanced cutoff frequency, drift mobility and free carrier concentration values. The drift mobility and terahertz cutoff frequency of a-SA-500 films reached 29.89 cm<sup>2</sup>/Vs and 9.50 THz in the IR range of light. The features of Ag<sub>2</sub>O coated amorphous Si films are promising for IR laser sensing and other electro-optical applications.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 12","pages":"2981 - 2990"},"PeriodicalIF":3.3,"publicationDate":"2025-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145073834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
SiliconPub Date : 2025-07-18DOI: 10.1007/s12633-025-03405-5
Nada Alfryyan, Hanan Al-Ghamdi, Norah A. M. Alsaif, Ebrahim A. Mahdy, H. A. Abo-Mosallam, Roya B. Malidarreh, Hesham M. H. Zakaly, Y. S. Rammah
{"title":"Bario-Silicate Glasses Reinforced With Cadmium Oxide: Physical, Mechanical Properties and Gamma Radiation Shielding Competence","authors":"Nada Alfryyan, Hanan Al-Ghamdi, Norah A. M. Alsaif, Ebrahim A. Mahdy, H. A. Abo-Mosallam, Roya B. Malidarreh, Hesham M. H. Zakaly, Y. S. Rammah","doi":"10.1007/s12633-025-03405-5","DOIUrl":"10.1007/s12633-025-03405-5","url":null,"abstract":"<div><p>This study investigates the impact of varying compositions of CdO, BaO, Bi<sub>2</sub>O<sub>3</sub>, and SiO<sub>2</sub> in glass materials on their physical, mechanical, and gamma radiation shielding properties. A series of glass samples with chemical compositions (50-x)CdO-10BaO-xBi<sub>2</sub>O<sub>3</sub>-40SiO<sub>2</sub>: x = 0, 10, 20, and 30 mol% were prepared via the melt-quenching method. The density (ρ) of the investigated glass samples enhanced from 4.87 g/cm<sup>3</sup> to 6.74 g/cm<sup>3</sup> as Bi<sub>2</sub>O<sub>3</sub> increased from 0 to 30 mol%. Young’s modulus (E) changed from 55.231 to 50.959 GPa, bulk modulus (B) changed from 38.589 to 32.740 GPa, shear modulus (S) changed from 21.892 to 20.538 GPa, and longitudinal modulus (L) changed from 55.008 to 48.144 GPa. Mass attenuation coefficient (G<sub>MAC</sub>) and half-value layer (G<sub>HVL</sub>) across a range of photon energies (0.122 to 1.332 MeV) were evaluated. The results indicate that increasing the Bi<sub>2</sub>O<sub>3</sub> content while reducing CdO enhances the glass density and improves gamma photon attenuation at lower energy levels. The glass sample with the composition GBi-10 exhibited the most effective radiation shielding, with the lowest G<sub>HVL</sub> and highest G<sub>MAC</sub> values. In contrast, the sample with the highest CdO content (GBi-30) demonstrated the least effective shielding performance at higher energy levels. This study highlights the critical role of glass composition in optimizing radiation shielding properties and offers valuable insights for developing advanced materials for medical, nuclear, and aerospace applications.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 12","pages":"2965 - 2980"},"PeriodicalIF":3.3,"publicationDate":"2025-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145073833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Advancements in Tunnel Field-Effect Transistors: Material Innovations, Emerging Applications and Future Perspectives","authors":"Seema Narwal, Preeti Yadav, Dimple Saproo, Ravinder Kumar, Sudakar Singh Chauhan, Rajiv Kumar","doi":"10.1007/s12633-025-03406-4","DOIUrl":"10.1007/s12633-025-03406-4","url":null,"abstract":"<div><p>Tunnel Field-Effect Transistors (TFETs) have emerged as promising alternatives to conventional Metal–Oxide–Semiconductor Field-Effect Transistors (MOSFETs) for next-generation low-power electronic applications, owing to their steep subthreshold swing (SS), low leakage currents, and scalability to advanced nanoscale architectures. This review presents a detailed exploration of the fundamental principles, design innovations, and material strategies employed to enhance TFET performance. Emphasis is placed on Band-to-Band tunneling (BTBT) mechanisms, the impact of novel materials such as III-V semiconductors, GeSn, InAs, and two-dimensional materials, as well as bandgap and gate engineering techniques. The paper evaluates advanced TFET structures, including doping-less, junction-less, vertical, and gate-all-around configurations, and their integration into analog, RF, and biosensing applications. Recent simulation models and fabrication challenges are also discussed. By examining state-of-the-art TFET research, this work highlights the transformative potential of TFETs in enabling ultra-low power devices and neuromorphic systems in the post-CMOS era.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 12","pages":"2729 - 2770"},"PeriodicalIF":3.3,"publicationDate":"2025-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145073628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}