Silicon最新文献

{"title":"Study of the Method for the Accurate Determination of Gel Content in Cured Polyaluminocarbosilane Fibers","authors":"Zhijing Li,&nbsp;Jing Huang,&nbsp;Zhanshuo Miao,&nbsp;Xiaoyu Wang,&nbsp;Qin Ouyang,&nbsp;Gaoming Mo,&nbsp;Qing Huang,&nbsp;Qiang Wei","doi":"10.1007/s12633-025-03237-3","DOIUrl":"10.1007/s12633-025-03237-3","url":null,"abstract":"<div><p>The curing process is the key process for preparing SiC fibers. Currently, there are fewer reports on the measurement methods related to the curing degree, leading to a lack of effective guidance for controlling the curing degree. The gel content of cured fibers can be measured through Soxhlet extraction to reflect the curing degree, which can be utilized to guide the control of the curing process of fibers. However, there are limited reports on the key influencing factors for accurately determining the gel content through Soxhlet extraction, such as the selection of appropriate extractant, extraction temperature, extraction time, and the selection of wrapping materials for cured fibers with stable mass which require further investigation. In this work, cured polyaluminocarbosilane (PACS) fibers with air oxidation curing are utilized as the research subject, and provide a reference for an accurate method to determine the gel content in cured fibers based on Soxhlet extraction. A wrapping material with lower water absorption and lower cost is preferred, and the effects of key factors such as the extractant, extraction temperature, extraction time, and number of extraction experiments on the accurate determination of gel content are examined to establish the optimal testing conditions. The accuracy and reliability of the method are further verified. This method is anticipated to be expanded to determine the gel content in other types of cured fibers and the cured fibers crosslinked by different processes, providing an effective means of characterizing the control of curing degree in the preparation process of precursor-derived SiC fibers.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 4","pages":"799 - 808"},"PeriodicalIF":2.8,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143529935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"W-Shaped Silicon Channels to Increase the Channel Perimeter and Improve the Output Current of Multi-Bridge-Channel FETs","authors":"Moon-Kwon Lee,&nbsp;Hyo-Jun Park,&nbsp;Tae-Hyun Kil,&nbsp;Ju-Won Yeon,&nbsp;Eui-Cheol Yun,&nbsp;Min-Woo Kim,&nbsp;Jun-Young Park","doi":"10.1007/s12633-025-03243-5","DOIUrl":"10.1007/s12633-025-03243-5","url":null,"abstract":"<div><p>The development of multi-bridge-channel field-effect transistors (MBC FETs) is considered to be cutting-edge technological progress in the foundry business. However, as devices shrink, nanoscale phenomena such as the quantum confinement effect and roughness scattering become increasingly significant. These phenomena reduce the carrier density and mobility and consequently lead to a decrease in the on-state current (<i>I</i>_ON). Hence, increasing <i>I</i>_ON and the chip speed without sacrificing the chip density is crucial for advanced SoCs. In this study, to enhance <i>I</i>_ON, an MBC FET structure with W-shaped silicon channels is introduced for the first time. The fabrication process and electrical characteristics are simulated in TCAD simulations with a Sentaurus device. Multiple W-shaped silicon channels are created by an additional process from the starting wafer. The proposed W-shaped silicon channels have an enlarged effective perimeter compared to the flat channels of conventional MBC FETs. This design enables the generation of more electrons in the inversion layers, leading to an increase in <i>I</i>_ON.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 4","pages":"817 - 823"},"PeriodicalIF":2.8,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143530026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Silicon Carbide Monolayer as a Promising Material for the Adsorption of SF6 Decomposed Gases","authors":"Maher Ali Rusho,&nbsp;Pawan Sharma,&nbsp;Soud Khalil Ibrahim,&nbsp;Hayder Hamid Abbas Al-Anbari,&nbsp;Aseel Salah Mansoor,&nbsp;Usama Kadem Radi,&nbsp;Ameer Hassan Idan,&nbsp;Hala Bahair,&nbsp;Masoud Alajmi","doi":"10.1007/s12633-025-03233-7","DOIUrl":"10.1007/s12633-025-03233-7","url":null,"abstract":"<div><p>Identifying materials that have naturally selectivity for specific gas molecules can greatly simplify designing of selective and sensitive gas sensors. Recently, researchers have recognized monolayers composed of group III–IV elements as a highly promising category of materials for gas sensing applications. This article focuses on the examination of gas adsorption characteristics of a monolayer of silicon carbide (SiC) using DFT-based first-principles computations. To assess the strength and nature of adsorption, we analyze charge transfer (CT), adsorption energy (E_ads), and adsorption distance. We assess potential of material for work function and electronic-based gas sensor applications by computing variations in its work function and conductivity. In present research, we focused on adsorption of decomposed gases from SF₆. Specifically, we examined the chemisorption of SOF₂ and SO₂F₂ on the SiC monolayer, which resulted in a notable alteration of the work function by over 20%. Furthermore, these gases exhibited a substantial impact on SiC monolayer conductivity. Furthermore, we observed that recovery time for SOF₂ and SO₂F₂ at room temperature is within the millisecond range, particularly at 600 K. This indicates a highly selective and sensitive response of the SiC monolayer to SOF₂ and SO₂F₂.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 4","pages":"789 - 798"},"PeriodicalIF":2.8,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143529938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Novel Sol-Gel Inks for the Direct Writing of SiO2-Based Bioactive Glass Scaffolds for Tissue Engineering Applications","authors":"Aylin M. Deliormanlı","doi":"10.1007/s12633-025-03224-8","DOIUrl":"10.1007/s12633-025-03224-8","url":null,"abstract":"<div><p>In this study, silicate-based, three-dimensional bioactive glass scaffolds were produced for the first time with innovative sol-gel ink-based robocasting, and their structural and morphological characterizations were performed. Additionally their, in vitro, bioactivity in simulated body fluid and phosphate-buffered saline at 37 °C was studied under static conditions. For this purpose, bare and rare earth element-containing (3 wt% Eu³⁺, Gd³⁺) silicate-based 13–93 bioactive glass gels were prepared at room temperature. Then, a hybrid gel system containing a mixture of bioactive glass gel and a temperature-sensitive hydrogel (polyethylene oxide-polypropylene oxide-polyethylene oxide tri-block-copolymer) at different ratios was used to obtain multilayered structures. After printing, the dried gel structures were calcined at 675 °C for 1 h in an air atmosphere. The results showed that the patterned, multilayered, macroporous bioactive glass scaffolds can be successfully produced using the method developed in the study. It has been understood that the structures prepared in this way can be made in much finer filament dimensions than the colloidal-based robocasting process containing bioactive glass particles. It was also shown that hydroxyapatite formation occurred on the surface of the bioactive glass scaffolds, which were kept in physiological fluids. The general results indicated that the sol-gel ink-based robocasting technique gives more promising results in preparing bioactive glass scaffolds with complex geometry than conventional colloidal ink-based robocasting. The incorporation of the studied rare earth elements was not detrimental to the printing process of the bioactive glass scaffolds.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 4","pages":"775 - 787"},"PeriodicalIF":2.8,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143529939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ozone Decomposition on Surfaces of Metal Doped Nanocages (V2-Si48, V2-C48 and V2-B24P24) as Effective Catalysts","authors":"Zahraa Sabah Ghnim,&nbsp;Ayat Hussein Adhab,&nbsp;Vicky Jain,&nbsp;Anjan Kumar,&nbsp;Roopashree R,&nbsp;Mukesh Kumari,&nbsp;Aditya Kashyap,&nbsp;R. S. K. Sharma,&nbsp;Morug Salih Mahdi,&nbsp;Aseel Salah Mansoor,&nbsp;Usama Kadem Radi,&nbsp;Nasr Saadoun Abd","doi":"10.1007/s12633-025-03226-6","DOIUrl":"10.1007/s12633-025-03226-6","url":null,"abstract":"<div><p>The capacities of V₂-Si₄₈, V₂-C₄₈ and V₂-B₂₄P₂₄ nanocages are examined to propose the acceptable catalysts for decomposition of O₃ molecule. The Vanadium atoms are active sites of V₂-Si₄₈, V₂-C₄₈ and V₂-B₂₄P₂₄ nanocages to adsorb the species of decomposition of O₃ molecule. The ∆E_adoption and ∆E_formation of V₂-Si₄₈, V₂-C₄₈ and V₂-B₂₄P₂₄ nanocages are more negative than ∆E_adoption and ∆E_formation of Ni-C₇₂, Fe-Si₇₆, Fe-C₇₆, Sc-C₈₂ and Sc-Si₈₂ in previous works. The ∆G_reaction values of all reaction steps via ER mechanism are negative values and the V₂-Si₄₈, V₂-C₄₈ and V₂-B₂₄P₂₄ nanocages can be preferred the ER mechanism over LH pathway for decomposition of O₃ from thermodynamic viewpoint. The ∆E_adoption and ∆E_formation values of V₂-Si₄₈, V₂-C₄₈ and V₂-B₂₄P₂₄ nanocages are more negative than ∆E_adoption and ∆E_formation of Ni-C₇₂, Fe-Si₇₆, Fe-C₇₆, Sc-C₈₂ and Sc-Si₈₂ in previous works. The V₂-B₂₄P₂₄ has higher catalytic activity than V₂-Si₄₈ and V₂-C₄₈ for decomposition of O₃ molecule. The V₂-B₂₄P₂₄ via ER mechanism has more negative ∆G_reaction and lower E_activation values than V₂-Si₄₈ and V₂-C₄₈. The V₂-B₂₄P₂₄ is proposed to catalyze the decomposition of O₃ molecule by using of the ER pathway.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 4","pages":"765 - 774"},"PeriodicalIF":2.8,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143529890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Candy-Mold Technique in An Argon-Free Atmosphere Magnesiothermic Process for Producing Silicon","authors":"Sigit Dwi Yudanto,&nbsp;Septian Adi Chandra,&nbsp;Rahadian Roberto,&nbsp;Nurhayati Indah Ciptasari,&nbsp;Eni Febriana,&nbsp;Muhammad Yunan Hasbi,&nbsp;Tony Kristiantoro,&nbsp;Bintang Adjiantoro","doi":"10.1007/s12633-025-03231-9","DOIUrl":"10.1007/s12633-025-03231-9","url":null,"abstract":"<div><p>Silicon is a material that plays a significant role in the electronics industry as a semiconductor material. Silica, which is commonly known as silicon dioxide, is present in nature. The separation of silicon from its oxide is achieved through the magnesiothermic reduction. In the current research, we report our success using the magnesiothermic method to reduce the silica (SiO₂) at temperatures below the melting point of magnesium. Both powders with molar ratio of Mg:SiO₂ = 1:2 are mechanically ground and then sealed in the stainless-steel tube. The silica reduction process was analyzed using an X-ray diffractometer at various heating temperatures (400, 500, 600, and 700 °C) in an argon-free atmosphere. When heated at temperature of 500 °C, we found that silicon began to separate at around 19 wt.%, according to the results of quantitative analysis. After eliminating magnesium oxide from selected samples using a leaching process, 90 wt.% of crystalline silicon was obtained. Further evidence of silicon reduction from the reaction of magnesium and SiO₂ is provided by a shift in the Raman spectroscopy peak from 462 cm⁻¹ to 517 cm⁻¹ for samples heated at 400 °C and 500 °C. Consequently, it can be stated that this method of reducing silica at low temperatures can be applied without requiring the use of argon gas during the heating process.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 4","pages":"755 - 763"},"PeriodicalIF":2.8,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143529943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Postharvest Application of Silicon and Aloe Vera-Based Edible Coating Improves the Shelf Life While Retaining the Biochemical Parameters of ‘Kinnow’ Mandarins","authors":"Babak ValizadehKaji,&nbsp;Yasaman Almasian","doi":"10.1007/s12633-025-03235-5","DOIUrl":"10.1007/s12633-025-03235-5","url":null,"abstract":"<div><p>The shelf-life of the ‘Kinnow’ mandarins is short and 35–40% of the fruits are lost during storage. Therefore, the use of high-performance, safe, and cost-effective methods, such as edible coatings is needed to prolong the shelf-life of mandarins. The present research aimed to examine the effects of silicon, <i>Aloe vera</i> gel (AVG), and their combination on the shelf-life and physio-biochemical parameters of ‘Kinnow’ mandarins during 72 days of storage at low temperatures. Fruits were analyzed for different parameters on days 0, 18, 36, 54, and 72. Compared to non-treated fruits, mandarins treated with a combination of silicon and AVG, had greater levels of sensory scores (39.93–85.83%), firmness (6.83–57.20%), TA (titratable acidity) (11.27–126.53%), vitamin C (10.74–76.25%), total phenol (20.68–115.38%), antioxidant capacity (10.38–80.26%), activity of antioxidant enzymes [APX (ascorbate peroxidase) (7.21–37.31%), CAT (catalase) (23.59–104.65%), GPX (guaiacol peroxidase) (12.69–65.76%), and SOD (superoxide dismutase) (18.42–124.00%)], and pectin (14.07–217.19%) during cold storage. Furthermore, silicon + AVG-treated mandarins showed lower levels of weight loss (35.20–56.24%), TSS (total soluble solids) (4.09–11.89%), H₂O₂ (hydrogen peroxide) (16.16–24.08%), MDA (malondialdehyde) (13.38–31.94%), as well as activity of pectin methylesterase (38.82–57.57%), and cellulose (50.85–69.89%) during storage. The findings of current research showed that postharvest application of silicon, AVG, and their combination, has a potential cost-effectiveness coating for preserving the quality characteristics and extending the shelf-life of mandarins.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 4","pages":"731 - 744"},"PeriodicalIF":2.8,"publicationDate":"2025-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143529941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preparation of SiO2 Film with High Hardness and Antireflection with AEO","authors":"Zhaorui Li,&nbsp;Zhiqiang Li,&nbsp;Yonghong Wu,&nbsp;Wenle Zhu,&nbsp;Lifang Nie,&nbsp;Juncheng Liu","doi":"10.1007/s12633-025-03225-7","DOIUrl":"10.1007/s12633-025-03225-7","url":null,"abstract":"<div><p>To improve the efficiency of solar cells, antireflective films require not only high optical properties but also high mechanical properties. The antireflective films were prepared by tetraethylorthosilicate (TEOS) and methyltriethoxysilane (MTES) as precursors and fatty alcohol polyoxyethylene ether (AEO) as the porogen. The microstructures, optical properties, and mechanical properties of the prepared antireflective films were examined. The results indicated that the AEO volume ratio had an obvious effect on film porosity, refractive index and average transmittance. With the increase of AEO content, the film’s porosity and the average transmittance firstly increased then decreased, the refractive index firstly decreased then increased in the wavelength range of 400–1100 nm. In the meanwhile, both the film’s surface hardness and adhesion strength increased with the increasing of the AEO addition. When the volume ratio of AEO is 45%, the porosity of the film is 48%,the refractive index value for 550 nm wavelength is 1.26and the maximum transmittance is 98.50%.The highest amount of light passing through a material, also known as transmittance, is recorded at an average of 91.98%within the wavelength range of 400–1100 nm, which is 4.64%higher than that of blank glass. In addition, the hardness of the film reaches the highest level for soft films 9H, and its adhesion strength also reaches the highest level of the tape method, 0 grade.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 4","pages":"745 - 754"},"PeriodicalIF":2.8,"publicationDate":"2025-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143529942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ameliorating and Tailoring the Features of Silica-Silicon Carbide Nanoceramic Doped Polyethylene Oxide for Promising Optoelectronics Applications","authors":"Mohammed H. Abbas,&nbsp;Hamed Ibrahim,&nbsp;Ahmed Hashim,&nbsp;Aseel Hadi","doi":"10.1007/s12633-025-03227-5","DOIUrl":"10.1007/s12633-025-03227-5","url":null,"abstract":"<div><p>Interest in exploiting physical properties of nanocomposite materials continues its upward trajectory, which can lead to advancements in a variety of application domains, including sensing and optoelectronics. Here, silica (SiO₂) and silicon carbide (SiC)-reinforced polyethylene oxide (PEO) nanocomposite membranes (NMs) are fabricated by a casting method. The SiO₂-SiC nanoparticle (NP) content is changed between 0–5.1 wt.%, followed by characterizing microstructural and optical properties of the resulting NMs. The successful reinforcement of SiO₂ and SiC NPs within the matrix is described using different analytical mechanisms. The absorbance of PEO/SiO₂-SiC NMs increases to 74.2%, and their transmittance decreases to 46% at a wavelength of λ = 560 nm when the SiO₂-SiCNP content increases to 5.1 wt.%. The absorption coefficient of pure PEO (6591 cm⁻¹) is found to increase to 8450 cm⁻¹ for the 5.1 wt.% NP content at a photon energy of 4.14 eV. Meanwhile, increasing the NP content from 0 to 5.1 wt.% decreases the allowed and forbidden indirect transition energy gaps from 3.7 to 3.3 eV and 3.6 to 3.2 eV, respectively. Alternatively, increasing trends are observed for the refractive index (from 1.94 to 2.64) and extinction coefficient (from 5.47 × 10^–3 to 19.76 × 10^–3) at λ = 780 nm. Also, the increased SiO₂-SiCNP content enhances the real and imaginary parts of the dielectric constant of the NMs.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 3","pages":"697 - 707"},"PeriodicalIF":2.8,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143481032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"N2O Reduction on Surfaces of V-Si48, V-C48, V-B24N24, V-CNT(6, 0) and V-BNNT(6, 0)) as Catalysts","authors":"Zahraa Sabah Ghnim,&nbsp;Farag M. A. Altalbawy,&nbsp;Shelesh Krishna Saraswat,&nbsp;Rekha M M,&nbsp;Guntaj J,&nbsp;Navin Kedia,&nbsp;M. Ravi Kumar,&nbsp;Ayat Hussein Adhab,&nbsp;Morug Salih Mahdi,&nbsp;Aseel Salah Mansoor,&nbsp;Usama Kadem Radi,&nbsp;Nasr Saadoun Abd","doi":"10.1007/s12633-025-03223-9","DOIUrl":"10.1007/s12633-025-03223-9","url":null,"abstract":"<div><p>In this study, the catalytic activity of Vanadium doped Si, C and BN nanocages and Vanadium doped Si, C and BN nanotube (6, 0) for N₂O reduction to create the CO, CO₂, N₂ and O₂ molecules are investigated by computational models. The reaction steps of V–O* + CO → V* + CO₂, V–O* + ethylene → V* + ethylene oxide and V–O* + N₂O → V* + N₂ + O₂ mechanisms for N₂O reduction are examined. The ΔG_reaction values for N₂O reduction on Vanadium doped Si, C and BN nanotube (6, 0) are more negative than Vanadium doped Si, C and BN nanocages. The E_activation values of V–O* + N₂O → V* + N₂ + O₂ are higher than V–O* + CO → V* + CO₂, V–O* + ethylene → V* + ethylene oxide mechanisms. The V–O* + CO → V* + CO₂ and V–O* + ethylene → V* + ethylene oxide mechanisms are acceptable pathways for N₂O reduction on Vanadium doped Si, C and BN nanocages and Vanadium doped Si, C and BN nanotube (6, 0). The Vanadium doped-Si and BN nanotube (6, 0) are proposed as effective catalysts for N₂O reduction with high performance.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 3","pages":"685 - 695"},"PeriodicalIF":2.8,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143480987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}