Advancements in Tunnel Field-Effect Transistors: Material Innovations, Emerging Applications and Future Perspectives

Tunnel Field-Effect Transistors (TFETs) have emerged as promising alternatives to conventional Metal–Oxide–Semiconductor Field-Effect Transistors (MOSFETs) for next-generation low-power electronic applications, owing to their steep subthreshold swing (SS), low leakage currents, and scalability to advanced nanoscale architectures. This review presents a detailed exploration of the fundamental principles, design innovations, and material strategies employed to enhance TFET performance. Emphasis is placed on Band-to-Band tunneling (BTBT) mechanisms, the impact of novel materials such as III-V semiconductors, GeSn, InAs, and two-dimensional materials, as well as bandgap and gate engineering techniques. The paper evaluates advanced TFET structures, including doping-less, junction-less, vertical, and gate-all-around configurations, and their integration into analog, RF, and biosensing applications. Recent simulation models and fabrication challenges are also discussed. By examining state-of-the-art TFET research, this work highlights the transformative potential of TFETs in enabling ultra-low power devices and neuromorphic systems in the post-CMOS era.