Silicon最新文献

{"title":"Thermophysical and Chemical Properties of NaF-AlF3-SiO2 Melts with Al2O3 Addition for Al-Si Alloy Production","authors":"Yonghui Yang,&nbsp;Chao Fan,&nbsp;Pengchen Yang,&nbsp;Zhanwei Liu,&nbsp;Hengwei Yan","doi":"10.1007/s12633-025-03311-w","DOIUrl":"10.1007/s12633-025-03311-w","url":null,"abstract":"<div><p>This study investigated the effect of aluminum oxide (Al₂O₃) additives on the properties of NaF-AlF₃-SiO₂ melts. The liquid-phase line temperature was determined through thermal analysis, while the solubility and volatilization loss of silicon dioxide (SiO₂) were evaluated using the rotating quartz disk method and volatilization experiments. The dissolution mechanism of Al₂O₃ in the melt was explored through thermodynamic analysis and experimental validation. The results indicated that Al₂O₃ addition significantly decreased liquid-phase line temperature, enhanced SiO₂ solubility, and reduced volatilization losses. These findings provide a theoretical basis for optimizing the electrolysis process of Al–Si alloys, which contribute to improved melt performance, enhanced energy efficiency, and reduced volatilization losses, thereby promoting increased efficiency in industrial applications.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 8","pages":"1943 - 1953"},"PeriodicalIF":3.3,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145143823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Protective Role of Silicon and Potassium in Enhancing Root Tolerance of Rice against Ferrous Iron (Fe2+) Toxicity","authors":"Sheikh Faruk Ahmed,&nbsp;Hayat Ullah,&nbsp;Rujira Tisarum,&nbsp;Suriyan Cha-um,&nbsp;Avishek Datta","doi":"10.1007/s12633-025-03316-5","DOIUrl":"10.1007/s12633-025-03316-5","url":null,"abstract":"<div><p>Ferrous iron (Fe²⁺) toxicity is a potent soil-generated abiotic stress that can severely limit lowland rice (<i>Oryza sativa</i> L.) production via cellular and physio-biochemical disruptions. Silicon (Si) or potassium (K) can enhance plant tolerance to numerous metal and metalloid stresses. The present study focused on evaluating whether exogenous Si/K could alleviate Fe²⁺ toxicity impairments of rice roots. Two independent pot experiments were simultaneously conducted involving two rice genotypes (RD85 [Fe²⁺-tolerant] and RD31 [Fe²⁺-susceptible]) and three Fe²⁺ (FeSO₄.7H₂O) levels (0 [control], 600, and 900 mg L⁻¹). In Experiment 1, four Si doses were applied (0 [control], 30, 60, and 90 kg ha⁻¹) as monosilicic acid. In Experiment 2, four K doses were applied (0 [control], 60, 120, and 180 kg ha⁻¹) as potassium chloride. Root impairments increased in both experiments with increasing Fe²⁺ levels, but exogenous Si/K effectively reduced the impairments across all measured parameters regardless of genotypes. The application of Si alleviated at best 26%, 36%, 16%, 28%, 44%, 33%, 34%, and 35% adverse impacts on root number per plant, root volume, root dry matter, membrane stability index, relative cell death, lipid peroxidation rate, free proline content, and total antioxidant activity, respectively, along with a 59% reduction in Fe content and a 37% increase in Si content in roots. Similarly, K application alleviated at the best 22%, 44%, 33%, 15%, 41%, 30%, 30%, and 86% adverse impacts on the same respective parameters along with a 39% reduction in Fe content and a 50% increase in K content in roots. The end mitigation responses from Si/K were similar; however, the underlying mechanisms were distinct. The major difference in the Fe²⁺ toxicity ameliorative activity between Si and K remained within the amount of Fe²⁺ uptake for the former and within the total antioxidant activity for the latter. Silicon promoted exodermal Casparian band formation in root exodermis for effective Fe²⁺ exclusion, whereas K extensively boosted free radical scavenging capacity to attain similar mitigation responses. The combined or synchronous application of Si and K could provide a promising research direction, considering their distinct mechanisms in mitigating Fe toxicity. The findings of this study would enhance present understanding on Fe²⁺ toxicity alleviation effects of both Si and K as well as help formulate management strategies for successful rice cultivation under Fe²⁺-toxic environments.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 8","pages":"1921 - 1941"},"PeriodicalIF":3.3,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145143350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Deciphering the Role of Silicon in Mitigation of Arsenic Toxicity in Soil–Plant Interface – An Overview","authors":"Sabyasachi Majumdar,&nbsp;Ramesh R,&nbsp;Laxmanarayanan Muruganantham,&nbsp;Pallavi Thimmappa,&nbsp;Dinesh Choudhary,&nbsp;G. Bhuvana Priya,&nbsp;Dwipendra Thakuria,&nbsp;Nagabovanalli Basavarajappa Prakash","doi":"10.1007/s12633-025-03257-z","DOIUrl":"10.1007/s12633-025-03257-z","url":null,"abstract":"&lt;div&gt;&lt;p&gt;Approximately 500 million people around the globe is affected by arsenic (As) contamination of ground water. The regions of India, Bangladesh, Nepal, Vietnam, and China that make up the South and Southeast Asian Belt are the most arsenic-polluted areas. Although the amounts are often lower in contrast to Asian countries, developed countries such as the USA, Mexico, and Canada also face extensive levels of groundwater contamination from As. A worldwide concern is the toxic concentration of As in soil and water and its short- and long-term impacts on human and animal health. In addition to being a health risk to humans and animals when consumed in tainted water, food produced on soil contaminated with As also poses a serious threat to human health. Plants may utilise As in soil in a variety of ways, mostly as arsenate [As(V)] and arsenite [As(III)]. The availability of As in soil depends on a number of soil physiochemical parameters, including pH and water content. Plants use the uptake pathways for phosphate (P) and silicon (Si) since they lack a unique mechanism for the uptake and transport of As. To lessen the harmful effects on plants and human health, it is essential to comprehend the chemistry of As in soil, how it is absorbed, and the physiological and metabolic changes it causes in plants. Effective management of As can be done by various agronomical interventions such as water management, application of inorganic fertilizers containing P, Si and molybdenum (Mo) and soil incorporation of biochar, identification and/or development of varieties which accumulate less As in the consumable part and where ratio of inorganic to organic forms of As is low, growing of As tolerant cultivars, adoption of phytoremediation technique and increased use of different organic manures and green manure crops. Among the various management strategies, application of Si fertilizer proves promising, as it reduces soil available As and further, being a structural analogue of As, limiting the As uptake by the plants thereby improves plant health. In addition to reducing As toxicity through competitive absorption, Si aids in the growth and development of plants under a variety of harsh environmental circumstances. Numerous studies have shown that Si may help plants cope with a variety of biotic and abiotic stressors. Besides sharing similar transporters with As, Si also have positive role on uptake of different macro and micronutrients and improve the physiological parameters of the crop thereby alleviate the negative impacts of As toxicity. According to studies, exogenous application of Si reduces As toxicity by improving secondary root development, imparting mechanical strength, and limiting As uptake through cell wall lignification. This review has emphasized that application of Si stimulated the activity of the enzyme arsenate reductase, improved pigment synthesis, scavenged reactive oxygen species (ROS) through both enzymatic and non-enzymatic routes, an","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 8","pages":"1891 - 1919"},"PeriodicalIF":3.3,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145143663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"ev-degree and ve-degree based Topological Indices of Silicon Carbide Structures","authors":"Shriya Negi,&nbsp;Vijay Kumar Bhat","doi":"10.1007/s12633-025-03299-3","DOIUrl":"10.1007/s12633-025-03299-3","url":null,"abstract":"<div><p>Topological indices are numerical values assigned to molecular structures, serving as essential descriptors in chemical graph theory. They provide valuable insights into the physicochemical properties of compounds by encapsulating information about connectivity patterns, thereby correlating molecular structure with various physical, chemical, and biological properties. However, Silicon Carbide structures has not sufficiently explored, limiting our understanding and potential applications in fields such as semiconductor technology, materials science, and nanotechnology. A deeper investigation into the topological properties of Silicon Carbide could reveal innovative applications and lead to more effective experimental designs that leverage its unique properties for advanced technological uses. In this paper, we calculated the <span>(ev)</span>- and <span>(ve)</span>- degree based topological indices for three significant classes of Silicon Carbide structures: <span>(S{i}_{2}{C}_{3})</span>-<span>(I[p,q])</span>, <span>(S{i}_{2}{C}_{3})</span>-<span>(II[p,q])</span> and <span>({Si}_{2}{C}_{3})</span>-<span>(III[p,q])</span>.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 8","pages":"1873 - 1890"},"PeriodicalIF":3.3,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145143147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural, Spectroscopic, and Optical Properties of Na2O–SiO2 Glass Network Doped with Er2O3","authors":"G. O. Rabie","doi":"10.1007/s12633-025-03286-8","DOIUrl":"10.1007/s12633-025-03286-8","url":null,"abstract":"<div><p>A glass series of (45-<i>x</i>) Na₂O-55SiO₂-<i>x</i>Er₂O₃, with <i>x</i> ranging from zero to 10 mol%, was produced via the melt-quenching technique. The study was focused on the modification in the glass structure to improve the optical and spectroscopic characteristics. Non-bridging oxygens (NBOs) are created within the SiO₄ tetrahedra, with the predominant <i>f</i>_<i>1</i> and <i>f</i>_<i>2</i> modes. The incorporation of 2% Er₂O₃ into the network elevated <i>f</i>_<i>1</i> fraction from 0.46 to 0.68, which subsequently decreased with an increase in Er³⁺ ions to 0.5. The glass density (<i>D</i>) of the base sample was 2.478 g/cm³, which increased to 3.433 g/cm³ with the addition of Er₂O₃. The molar volume (<i>V</i>_<i>m</i>) values increased from 24.951 to 27.203 cm³/mol, depending on the ratio of Er³⁺ ions. The optical band gap (<i>E</i>_<i>g</i>) values dropped from 3.168 eV to 2.183 eV as the Er₂O₃ concentration rose from zero to 10 mol%, while the refractive index (<i>n</i>_<i>o</i>) increased from 2.353 to 2.661. The spectroscopic properties were analyzed utilizing Judd–Ofelt theory. The intensity parameters (Ω_λ) exhibit the order Ω₂ &gt; Ω₄ &gt; Ω₆ for all samples containing Er³⁺ ions, due to the high covalent character of the glass. Moreover, the Ω_λ is dependent on the concentration of Er₂O₃; Ω₂ decreased from 1.159 to 0.373, Ω₄ decreased from 0.851 to 0.247, and Ω₆ varied from 0.501 to 0.209, as the Er₂O₃ concentration increased from 2 to 10 mol%. The computed radiative lifetime rose from 85.027 to 146.177 µs, rendering these glasses appropriate for use as a laser active medium.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 8","pages":"1859 - 1871"},"PeriodicalIF":3.3,"publicationDate":"2025-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145142809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Correction to: Effect of Silicon Carbide Nanoparticles on the Mechanical, Barrier, Antibacterial and Biodegradable Properties of Pullulan/Lignin Bio Nanocomposite Blends for Food Packaging Applications","authors":"Vishnuvarthanan Mayakrishnan,&nbsp;Raja Venkatesan,&nbsp;Maher M. Alrashed,&nbsp;Ramji Vaidhyanathan,&nbsp;Asha Anish Madhavan","doi":"10.1007/s12633-025-03318-3","DOIUrl":"10.1007/s12633-025-03318-3","url":null,"abstract":"","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 5","pages":"1077 - 1077"},"PeriodicalIF":2.8,"publicationDate":"2025-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143871246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Innovations in Advanced Material Design for Enhancing Stability In Perovskites Solar Cells","authors":"Praveen Barmavatu,&nbsp;Baburao Gaddala,&nbsp;Dadapeer Doddamani,&nbsp;Sharun Mendonca,&nbsp;Jatoth Heeraman,&nbsp;Ramalinga Viswanathan Mangalaraja","doi":"10.1007/s12633-025-03314-7","DOIUrl":"10.1007/s12633-025-03314-7","url":null,"abstract":"<div><p>The pursuit of sustainable energy solutions has intensified the need for innovative materials for solar technology, particularly in the development of perovskite solar cells (PSCs). One primary issue is the inherent sensitivity of perovskite materials to environmental factors such as moisture, oxygen, and light, which can lead to degradation and reduced efficiency over time. The objective of this study is to explore and develop innovative advanced materials that enhance the stability and longevity of perovskite solar cells. This study presents a comprehensive investigation into the selection and characterization of semiconductor materials for photovoltaic applications, focusing on perovskites, silicon, and organic photovoltaics to analyze their optical and electronic properties. It further explores innovative device fabrication and optimization strategies, particularly through layer stacking design and tandem solar cell configurations aimed to enhance light absorption and charge transport efficiency. The research incorporates the use of transparent conductive oxides (TCOs), hole transport materials (HTMs), and electron transport materials (ETMs) to optimize the device's performance. The performance evaluation and stability testing are rigorously conducted, utilizing current–voltage (I-V) measurements under Standard Test Conditions (STC) to assess the efficiency and fill factor of solar cells. The findings show that the vapour deposition boasts the highest average efficiency at 24.0%, enabling precise control over film thickness and composition, which enhances material properties, and Recent advancements in photovoltaic technology have achieved a 28.3% efficiency in high-performance solar cells, significantly surpassing earlier mid-20 s efficiency. However, stability remains a challenge, with current stability at 26%, highlighting the need for long-term reliability in real-world conditions implemented by using MATLAB software. Future research could focus on next-generation hybrid materials, such as combining organic–inorganic perovskites with 2D materials or graphene oxide to enhance stability and performance. These innovative hybrids may improve charge transport, reduce degradation, and provide better thermal and environmental stability, leading to more durable and efficient perovskite solar cells.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 8","pages":"1841 - 1858"},"PeriodicalIF":3.3,"publicationDate":"2025-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145142581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Lateral Scaling of In0.22Al0.2Ga0.58As/ In0.53Ga0.47As HEMTs on Si Substrate for RF Application","authors":"Chumki Das,&nbsp;Kaushik Mazumdar","doi":"10.1007/s12633-025-03312-9","DOIUrl":"10.1007/s12633-025-03312-9","url":null,"abstract":"<div><p>In this work, we investigated a novel In_0.22Al_0.2Ga_0.58As/In_0.53Ga_0.47As high electron mobility transistors (HEMTs) on silicon substrates for future high speed logic applications. Our research found that incorporating InAlGaAs as sub-cap and barrier layers significantly enhances electrostatic integrity. We also examined the impact of lateral scaling on the logic performance of these novel HEMTs, focusing on short channel effects and RF performance. The device demonstrated excellent RF performance, with a high maximum drain current (I_D,MAX) of 3.46 mA/µm at gate source voltage (V_GS) of 0.5 V, source-drain resistance (R_SD) of 137 Ω.µm, maximum transconductance (g_m,max) of 4.64 mS/µm, and a cutoff frequency (f_T) of 183.5 GHz at drain to source voltage (V_DS) of 0.5 V for L_g = 30 nm. These findings represent the highest performance reported for InGaAs HEMTs on silicon substrates with approximately the same gate length.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 8","pages":"1833 - 1840"},"PeriodicalIF":3.3,"publicationDate":"2025-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145142608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Performance Evaluation of Junctionless Double Surrounding Gate Si Nanotube MOSFET Using Triple and Quadruple Metal Gate Work Function Engineering for the Upcoming Sub 2 nm Technology Node","authors":"Sanjay,&nbsp;Vibhor Kumar,&nbsp;Anil Vohra","doi":"10.1007/s12633-025-03290-y","DOIUrl":"10.1007/s12633-025-03290-y","url":null,"abstract":"<div><p>In this work, Triple Metal (TM) and Quadruple Metal (QM) gate engineering have been done for both junctionless (JL) inversion mode (IM) and Double surrounding Gate (DSG) Si nanotube (SiNT) MOSFET to study drain current (I_D) characteristics for gate length of 2 nm using Silvaco ATLAS 3D TCAD. For this, the Non Equilibrium Green’s Function (NEGF) method has been used along with self-consistent solution of Schrödinger’s equation with Poisson’s equation. In case of IM channel region of SiNT device, there is lightly doping. In this device SiO₂ is used as gate oxide thickness of 0.8 nm, with Si channel radius of 1.5 nm have been used. A comparison has also been done between results of TM DSG and QM DSG SiNT. For a reasonable comparison between JL and IM SiNT, in each case of TM and QM JL SiNT doping concentration are optimized for two goals (i) to obtain the same I_ON as IM SiNT and (ii) to obtain the same threshold voltage (V_TH) as IM SiNT. This results in about 10 times smaller I_OFF for both JL, I_ON and V_TH matching SiNT for both TM and QM case. This also results in about 10 times higher I_ON/I_OFF current ratio for all JL device as compared to IM device for both TM and QM case. All used JL SiNT results in smaller DIBL in both TM and QM case as compared to IM SiNT device. In this work for JL SiNT, a smaller DIBL ~ 36.46 mV/V, nearly ideal subthreshold slope (SS) ~ 60 mV/dec, and higher I_ON/I_OFF current ratio ~ 4.41 × 10¹⁰ have been obtained in comparison to available literature CGAA device results.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 8","pages":"1811 - 1832"},"PeriodicalIF":3.3,"publicationDate":"2025-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145142055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Silicon Nanoparticles in Energy Storage: Advances, Challenges, and Future Perspectives","authors":"A. Boretti,&nbsp;S. Castelletto","doi":"10.1007/s12633-025-03308-5","DOIUrl":"10.1007/s12633-025-03308-5","url":null,"abstract":"<div><p>Silicon oxidation plays a critical role in semiconductor technology, serving as the foundation for insulating layers in electronic and photonic devices. This review delves into the potential of silicon nanoparticles and microparticles for energy storage applications, focusing on their combustion in oxygen and steam. Silicon combustion offers a pathway for significant energy release, while the steam reaction presents a dual opportunity for energy generation and clean hydrogen production. The concept of recycling silicon dioxide into silicon aligns with the principles of a circular economy and offers solutions for the sustainable management of materials such as end-of-life photovoltaic panels. Despite the exciting possibilities, the practical application of these technologies is still in its infancy, with ongoing research addressing key challenges related to efficiency and scalability. This exploration provides a comprehensive outlook on the prospects and hurdles in leveraging silicon-based systems for sustainable energy solutions.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 8","pages":"1799 - 1810"},"PeriodicalIF":3.3,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145141979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}