Silicon最新文献_第10页

Analytical solutions of photothermal wave in semiconductor materials 半导体材料中光热波的解析解

IF 2.8 3区材料科学

Silicon Pub Date : 2024-07-13 DOI: 10.1007/s12633-024-03048-y

Zuhur Alqahtani, Ibrahim Abbas, Alaa A. El-Bary, Areej Almuneef

引用次数: 0

Efficiency Boosting of 4-T Bifacial Dual-Textured Perovskite/Perl Silicon Tandem Solar Cells: Process and Device TCAD Simulation Study 提高 4-T 双面双层珍珠岩/珍珠硅串联太阳能电池的效率：工艺和器件 TCAD 仿真研究

IF 2.8 3区材料科学

Silicon Pub Date : 2024-07-13 DOI: 10.1007/s12633-024-03076-8

H. A. El-Demsisy, Ahmed Shaker, M. D. Asham, Ibrahim S. Ahmed, Tarek M. Abdolkader

{"title":"Efficiency Boosting of 4-T Bifacial Dual-Textured Perovskite/Perl Silicon Tandem Solar Cells: Process and Device TCAD Simulation Study","authors":"H. A. El-Demsisy, Ahmed Shaker, M. D. Asham, Ibrahim S. Ahmed, Tarek M. Abdolkader","doi":"10.1007/s12633-024-03076-8","DOIUrl":"10.1007/s12633-024-03076-8","url":null,"abstract":"<div><p>Perovskite/Silicon tandem solar cells have earned substantial attention in the field of photovoltaics (PVs) due to their potential high-efficiency energy conversion. The provided TCAD simulation in the current work aims at delivering a novel design for a 4-T Perovskite/PERL p-type Si tandem solar cell. The main structure consists of ITO/CuSCN/Perovskite/PC60PM/AZO/AgNW as the top cell and a conventional PERL p-Si as the bottom cell. Simulation results showed that the proposed top cell structure achieves a significant performance after substituting Zn(O<sub>0.3</sub>,S<sub>0.7</sub>) for AZO and PC60PM electron transport layers (ETLs), while replacing CuSCN with CuI as a suitable alternative for the hole transport layer (HTL). These modifications achieved an efficiency of 19.81% for the top cell. The bottom cell also attained a noteworthy level of performance by using bifacial dual-side-textured construction with efficiencies reaching 29.11% and 14.08% for bare and filtered cells, respectively. With these combined modifications, the PCE (power conversion efficiency) reached 33.89%, showing significant improvement compared to the base structure.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 13-14","pages":"5337 - 5353"},"PeriodicalIF":2.8,"publicationDate":"2024-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141614378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of B2O3 on the Physical and Mechanical Properties of Calcium Fluoroaluminosilicate Glass System B2O3 对氟铝硅酸钙玻璃体系物理和机械特性的影响

IF 2.8 3区材料科学

Silicon Pub Date : 2024-07-10 DOI: 10.1007/s12633-024-03072-y

Abdelkader Mohammed Efa, Khamirul Amin Matori, Mohd Hafiz Mohd Zaid, Che Azurahanim Che Abdullah, Norhazlin Zainuddin, Mohd Zul Hilmi Mayzan, Shahira Liza Kamis

{"title":"Effect of B2O3 on the Physical and Mechanical Properties of Calcium Fluoroaluminosilicate Glass System","authors":"Abdelkader Mohammed Efa, Khamirul Amin Matori, Mohd Hafiz Mohd Zaid, Che Azurahanim Che Abdullah, Norhazlin Zainuddin, Mohd Zul Hilmi Mayzan, Shahira Liza Kamis","doi":"10.1007/s12633-024-03072-y","DOIUrl":"10.1007/s12633-024-03072-y","url":null,"abstract":"<div><p>Bioactive glasses containing boron oxide have attracted substantial attention owing to their unique attributes and the promising prospects they offer for biomedical uses. The study explores boro calcium fluoro alumino silicate (BCFAS) glass containing boron oxide, highlighting its potential in biomedical applications. The glass was synthesized through melt-water quenching with varying B<sub>2</sub>O<sub>3</sub> ratios, utilizing CaO from clam shell and SiO<sub>2</sub> from soda lime silica glass waste. The investigation examined the physical and mechanical properties of the resulting samples. Results showed that increasing B<sub>2</sub>O<sub>3</sub> content caused a reduction in crystallinity, as confirmed by XRD analysis. The incorporation of B<sub>2</sub>O<sub>3</sub> into the glass structure was further supported by the emergence of B‒O‒B and Si‒O‒B bonds observed in FTIR spectroscopy, which may potentially influence the glass's dissolution and degradation characteristics. However, higher B<sub>2</sub>O<sub>3</sub> content also reduced density, impacting the mechanical properties. Vickers microhardness and compressive strength decreased due to the introduction of the BO<sub>3</sub> unit, which increased the fragility of the glass. While enhancing glass-like behavior and potentially increasing bioactivity, the addition of B<sub>2</sub>O<sub>3</sub> adversely affected its mechanical attributes.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 13-14","pages":"5327 - 5336"},"PeriodicalIF":2.8,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141573795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Microstructure Analysis of Silicon Nanowalls: Insights from Positron Beam Doppler Broadening Measurements 硅纳米壁的微观结构分析：正电子束多普勒展宽测量的启示

IF 2.8 3区材料科学

Silicon Pub Date : 2024-07-08 DOI: 10.1007/s12633-024-03075-9

C. Lakshmanan, R. N. Viswanath, Anil K. Behera, P. K. Ajikumar, R. Rajaraman

{"title":"Microstructure Analysis of Silicon Nanowalls: Insights from Positron Beam Doppler Broadening Measurements","authors":"C. Lakshmanan, R. N. Viswanath, Anil K. Behera, P. K. Ajikumar, R. Rajaraman","doi":"10.1007/s12633-024-03075-9","DOIUrl":"10.1007/s12633-024-03075-9","url":null,"abstract":"<div><p>Silicon nanowalls atop the (100) – oriented boron doped P-type (1–10 Ω-cm) single crystalline silicon wafers were prepared using a metal assisted chemical etching route for different durations 1, 5, 15, and 30 min. The scanning electron microscopy results revealed that the structure evolved up on etching is in the form of vertical silicon nanowalls with mean wall thickness of 70 nm. It can be observed that as the etching time increases, the height of the SiNWs increases linearly at an etching rate of ~ 301 nm per minute. The transmission electron microscopy results combined with FTIR spectroscopy results indicate that about one nanometer thick Si–O-Si- bonded amorphous layer formed at the surface of the grown silicon nanowalls. A defect sensitive Variable energy positron beam Doppler broadening technique used to study the etched silicon wafers confirms that the defect structures that are evolved in the silicon nanowalls with etching are different from that of planar Silicon. Analysis of the Doppler broadened line-shape profiles shows that the effective positron diffusion length and height of the silicon nanowalls are related logarithmically with a scaling exponent of—1/2, indicating that the implanted positrons that are thermalized in the silicon nanowalls diffuse back to the wall surfaces and are annihilated at the defects linked (Si–O-Si)/Si interface region. The present positron experimental results abound with literature reports suggest that understanding the microstructure of the surface layer in SiNWs is significantly important in determining their performance for producing efficient solar cells.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 13-14","pages":"5317 - 5325"},"PeriodicalIF":2.8,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141573571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetic Field and Moisture Diffusivity Effects on Photo-Elasto-Thermodiffusion Waves in Excited Semiconductor Materials 磁场和水分扩散率对受激半导体材料中光-电-热扩散波的影响

IF 2.8 3区材料科学

Silicon Pub Date : 2024-07-05 DOI: 10.1007/s12633-024-03042-4

Tarek E. I. Nassar, Merfat H. Raddadi, Khaled Lotfy

{"title":"Magnetic Field and Moisture Diffusivity Effects on Photo-Elasto-Thermodiffusion Waves in Excited Semiconductor Materials","authors":"Tarek E. I. Nassar, Merfat H. Raddadi, Khaled Lotfy","doi":"10.1007/s12633-024-03042-4","DOIUrl":"10.1007/s12633-024-03042-4","url":null,"abstract":"<div><p>In this article, a novel model was studied that explains the interaction between the equations governing the photo-thermoelasticity theory in the case of the presence of the diffusion of moisture of the semiconductor medium with the electromagnetic field. The photo-thermoelasticity theory is used to investigate the photothermal excitation process for an elastic semiconductor medium in a one-dimensional deformation. This article discusses the effect of the magnetic field on conductive moisture diffusivity. The coupling interactions between magneto-thermo-elastic stresses and moisture diffusivity are investigated. According to some initial conditions, the governing equations are investigated using the Laplace transform technique to calculate the numerical solution of the key physical field contribution in the Laplace domain. The basic quantities for the process in the Laplace domain are calculated using all mechanical stresses, thermal conditions, and plasma boundary surface conditions. To obtain complete solutions in the time domain for the main problems, the numerical method approach is used to invert the Laplace transform. Some comparisons are made under the influence of different parameters to show the wave propagation of the main fields.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 13-14","pages":"5301 - 5315"},"PeriodicalIF":2.8,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141550352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetic Mesoporous Silica Nanocomposite Supported Ionic Liquid/Cu as a Powerful and Highly Stable Catalyst for Chan-Lam Coupling Reaction 以离子液体/铜为支撑的磁性介孔二氧化硅纳米复合材料是用于 Chan-Lam 偶联反应的强力高稳定催化剂

IF 2.8 3区材料科学

Silicon Pub Date : 2024-07-05 DOI: 10.1007/s12633-024-03082-w

Shiva Kargar, Dawood Elhamifar

引用次数: 0

Bredigite Bioceramic: A Promising Candidate for Bone Tissue Engineering Bredigite 生物陶瓷：骨组织工程的理想候选材料

IF 2.8 3区材料科学

Silicon Pub Date : 2024-07-05 DOI: 10.1007/s12633-024-03083-9

Mohammad Khodaei, Akram Nadi

{"title":"Bredigite Bioceramic: A Promising Candidate for Bone Tissue Engineering","authors":"Mohammad Khodaei, Akram Nadi","doi":"10.1007/s12633-024-03083-9","DOIUrl":"10.1007/s12633-024-03083-9","url":null,"abstract":"<div><p>Because of their desirable characteristics, ceramic-based scaffolds have emerged as prominent candidates for artificial bone replacements in bone regeneration procedures. Bredigite (Ca<sub>7</sub>MgSi<sub>4</sub>O<sub>16</sub>) ceramic has demonstrated favorable bioactivity, bone growth, and mechanical qualities, making it a viable candidate for replacing bone defects. This review presents the main techniques employed for the synthesis of bredigite. It was also mentioned how combining bredigite ceramic with other materials might increase the quality of composites. Because of the presence of magnesium in bredigite, it has higher mechanical properties and chemical stability than calcium silicates such as wollastonite, dicalcium silicate, and tricalcium silicate. The density and elastic modulus of bredigite is 3.4 gr/cm3 and 43 GPa, respectively. Higher mechanical properties of bredigite compared to polymers, and its biocompatibility, bioactivity, and osteoconductivity, can cause to higher quality of polymer-bredigite composite than that of polymer. Based on findings derived from many investigations conducted in <i>in-vitro</i> and <i>in-vivo</i> contexts, bredigite has great promise as a flexible and efficient material for bone tissue engineering. Additional research is needed to maximize the clinical applications of bredigite bioceramics.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 13-14","pages":"5213 - 5230"},"PeriodicalIF":2.8,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s12633-024-03083-9.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141550354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

On the Computation of Temperature Indices of Silicates, with Strong Potential to Predict the Boiling Point of Hydrocarbons 论硅酸盐温度指数的计算及其预测碳氢化合物沸点的强大潜力

IF 2.8 3区材料科学

Silicon Pub Date : 2024-07-04 DOI: 10.1007/s12633-024-03081-x

Jian Zhong Xu, Zaryab Hussain, Fairouz Tchier, Ferdous Tawfiq

引用次数: 0

Study on the Purification Mechanism of Low-Grade Silicon Ore through a Combination of Direct Roasting and Pressure Leaching 直接焙烧和压力浸出相结合的低品位硅矿提纯机制研究

IF 2.8 3区材料科学

Silicon Pub Date : 2024-07-03 DOI: 10.1007/s12633-024-03080-y

Junyu Qu, Zhengjie Chen, Dandan Wu, Wenhui Ma

{"title":"Study on the Purification Mechanism of Low-Grade Silicon Ore through a Combination of Direct Roasting and Pressure Leaching","authors":"Junyu Qu, Zhengjie Chen, Dandan Wu, Wenhui Ma","doi":"10.1007/s12633-024-03080-y","DOIUrl":"10.1007/s12633-024-03080-y","url":null,"abstract":"<div><p>Impurities in low-grade silicon ore, particularly iron and aluminum, can significantly influence the quality of subsequent products. Therefore, it is vital to eliminate these impurities to improve the purity of low-grade silicon ore. This study introduces a method for removing iron and aluminum impurities from silicon ore. The silicon ore samples were analyzed through X-ray diffraction, scanning electron microscopy, and potential-pH diagram. The results confirmed that after direct roasting, the quartz crystal transformed from α-quartz to β quartz, causing an increase in quartz volume. After quenching, cracks and pits formed on the quartz surface, facilitating the diffusion and oxidation of impurities. Subsequent pressure leaching enabled the leaching agent to effectively penetrate the quartz interior, thereby removing impurities from the quartz sand. The experimental results revealed that the optimal conditions for removing impurities through direct roasting and quenching involved using a mixed acid solution containing 3% hydrochloric acid and 6 g/L oxalic acid. The leaching process was conducted at a temperature of 200 ℃ for 4 h in a reactor. Under these conditions, the silicon ore exhibited residual Fe and Al contents of 85 and 320ppmw, respectively, achieving the highest removal rates of 97.98% and 97.85%, the SiO<sub>2</sub> content in silicon ore increased from 94.08% to 99.42%. Compared with leaching under atmospheric pressure leaching, pressure leaching resulted in a 30% increase in the removal rate of impurities. This study provides valuable practical guidance for purifying low-grade silicon ore used in silicon smelting raw materials.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 13-14","pages":"5257 - 5271"},"PeriodicalIF":2.8,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s12633-024-03080-y.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141523896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modulating Physiological and Antioxidant Responses in Wheat Cultivars via Foliar Application of Silicon Nanoparticles (SiNPs) Under Arsenic Stress Conditions 在砷胁迫条件下通过叶面喷施硅纳米粒子（SiNPs）调节小麦品种的生理和抗氧化反应

IF 2.8 3区材料科学

Silicon Pub Date : 2024-07-02 DOI: 10.1007/s12633-024-03078-6

Zahoor Ahmad, Rooma Younis, Tanveer Ahmad, Muhammad Aamir Iqbal, Arkadiusz Artyszak, Yahya M. Alzahrani, Hesham F. Alharby, Hameed Alsamadany

{"title":"Modulating Physiological and Antioxidant Responses in Wheat Cultivars via Foliar Application of Silicon Nanoparticles (SiNPs) Under Arsenic Stress Conditions","authors":"Zahoor Ahmad, Rooma Younis, Tanveer Ahmad, Muhammad Aamir Iqbal, Arkadiusz Artyszak, Yahya M. Alzahrani, Hesham F. Alharby, Hameed Alsamadany","doi":"10.1007/s12633-024-03078-6","DOIUrl":"10.1007/s12633-024-03078-6","url":null,"abstract":"<div><p>Globally, heavy metals especially arsenic (As) toxicity in staple crops like wheat has posed serious threats to human health, necessitating conducting fresh studies to find out biologically viable As toxicity mitigation strategies. Therefore, this study aimed to investigate the impact of foliar-applied silicon nanoparticles (SiNPs) at the tillering stage on the activation of physiological and antioxidant regulation in wheat to induce tolerance against varying As toxicity levels. The trial comprised two promising wheat cultivars (Anaaj and Ghazi) and five SiNPs regimes including 0, 30, 60, 90, and 120 ppm doses against As toxicity levels of 0 and 25 ppm. The recorded findings depicted that SiNPs regimes significantly improved morphological characteristics such as root length, fresh and dry weight, as well as shoot length, and fresh and dry weight of wheat cultivars. Additionally, the levels of chlorophyll pigments, including chlorophyll a, chlorophyll b, and total chlorophyll contents, were significantly increased in SiNPs-treated plants, indicating improved photosynthetic activity. The enhanced antioxidant enzyme activities, such as ascorbate peroxidase (APX), superoxide dismutase (SOD), peroxidase (POD), and catalase (CAT), played a vital role in combating oxidative stress induced by As toxicity. Moreover, SiNPs application resulted in a significant reduction in As concentration in both leaves and roots, highlighting the ability of SiNPs to regulate the uptake and accumulation of arsenic and mitigate its toxic effects. In conclusion, the foliar application of SiNPs during the tillering stage of wheat effectively activated physiological and antioxidant regulation, leading to enhanced tolerance against As toxicity.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 12","pages":"5199 - 5211"},"PeriodicalIF":2.8,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141523898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0