ev-degree and ve-degree based Topological Indices of Silicon Carbide Structures

Abstract

Topological indices are numerical values assigned to molecular structures, serving as essential descriptors in chemical graph theory. They provide valuable insights into the physicochemical properties of compounds by encapsulating information about connectivity patterns, thereby correlating molecular structure with various physical, chemical, and biological properties. However, Silicon Carbide structures has not sufficiently explored, limiting our understanding and potential applications in fields such as semiconductor technology, materials science, and nanotechnology. A deeper investigation into the topological properties of Silicon Carbide could reveal innovative applications and lead to more effective experimental designs that leverage its unique properties for advanced technological uses. In this paper, we calculated the \(ev\)- and \(ve\)- degree based topological indices for three significant classes of Silicon Carbide structures: \(S{i}_{2}{C}_{3}\)-\(I[p,q]\), \(S{i}_{2}{C}_{3}\)-\(II[p,q]\) and \({Si}_{2}{C}_{3}\)-\(III[p,q]\).