IF 2.8 3区材料科学

Silicon Pub Date : 2024-07-24 DOI: 10.1007/s12633-024-03098-2

Rehab Joko Hussin, Ivan B. Karomi

{"title":"Progressing in III-V Semiconductor Quantum Dot Lasers Grown Directly on Silicon: A Review","authors":"Rehab Joko Hussin, Ivan B. Karomi","doi":"10.1007/s12633-024-03098-2","DOIUrl":"10.1007/s12633-024-03098-2","url":null,"abstract":"<div>Enormous advantages can be brought by using silicon as a substrate for III-V photonic integrated circuit quantum dot (QD) lasers, such as a low cost, high bandwidth transmission data, on-chip light sources, etc. However, several difficulties arise when III-V QD lasers are grown directly on Si-substrate, mainly due to high lattice mismatching between the III-V components and the silicon wafer. In fact, a highly thermal expansion coefficient difference, threading dislocation densities (TDDs), and antiphase boundaries (APBs) are the crucial obstacles for developing a high-performance semiconductor laser on Si. In this regard, many approaches and strategies have been devoted to tolerantly grow III-V on Si. In this review, the history of QD laser diodes directly grown on Si-substrate is demonstrated. The benefits and the problems of III-V semiconductor materials epitaxially grown on Si are discussed. The recent progress in QD lasers grown in silicon is reviewed, focusing on InAs-QD lasers in terms of threshold current density, output optical power, emission wavelengths, and operation temperatures. The future of QD lasers monolithically grown on Si-substrate and their application are also discussed in this review.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 15","pages":"5457 - 5470"},"PeriodicalIF":2.8,"publicationDate":"2024-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141781560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Preparation of 3D Composite Nanomaterials Based on Opal Matrices by Reduction of Palladium and Platinum Compounds 通过还原钯和铂化合物制备基于蛋白石基质的三维复合纳米材料

IF 2.8 3区材料科学

Silicon Pub Date : 2024-07-24 DOI: 10.1007/s12633-024-03039-z

Dmitry V. Kamashev, Yevgeny A. Golubev, Igor V. Antonets, Shiyong Sun

引用次数: 0

Experimental Investigation of the Radiation Shielding Performance of a Newly Developed Silicon-Epoxy Resin Doped with WO3 Micro/Nanoparticles 掺杂 WO3 微/纳米粒子的新开发硅-环氧树脂辐射屏蔽性能的实验研究

IF 2.8 3区材料科学

Silicon Pub Date : 2024-07-24 DOI: 10.1007/s12633-024-03088-4

Mohamed Elsafi, Ali M. Hedaya, Esraa H. Abdel-Gawad, M. Rashad, M. I. Sayyed, Ibrahim H. Saleh

{"title":"Experimental Investigation of the Radiation Shielding Performance of a Newly Developed Silicon-Epoxy Resin Doped with WO3 Micro/Nanoparticles","authors":"Mohamed Elsafi, Ali M. Hedaya, Esraa H. Abdel-Gawad, M. Rashad, M. I. Sayyed, Ibrahim H. Saleh","doi":"10.1007/s12633-024-03088-4","DOIUrl":"10.1007/s12633-024-03088-4","url":null,"abstract":"<div>In this work, tungsten oxide (WO3) particles (in micro and nanoscales) have been mixed with silicon epoxy resin to create a novel composite to enhance the radiation attenuation properties of an epoxy resin shield. Six epoxy resin samples were created using various WO3 micro/nanoparticles concentrations. Several radioactive sources with varying energies were employed along with a high-purity germanium detector to evaluate the prepared samples' shielding capabilities. The linear attenuation coefficients (LACs) were measured experimentally using the narrow beam method. Based on the experimentally obtained values of LACs, other radiation shielding parameters, including half value length (HVL), tenth value layer (TVL), radiation shielding efficiency (RSE), and mean free path (MFP), were computed. The EW-20m30n sample (50% epoxy + 20% micro WO3 + 30% nano WO3) had the lowest MFP, HVL, and TVL at any given energy. Thus, in terms of material thickness, the EW-20m30n sample offers the best shielding characteristics. Furthermore, because of its superior density, the almost even mixture of nanoparticles and microparticles in the EW-20m30n sample produces a RSE of ≅ 100% in the low energy zone. Conversely, it was found that the samples' ability to protect decreased as the energy increased. Calculating HVL, TVL, and MFP revealed a high energy dependence that grew as the incident photon energy rose. On the other hand, for 50% micro WO3 and 50% epoxy, the EW-50m sample had the least ideal shielding characteristics. Categorically, our study has demonstrated that adding WO3 micro/nanoparticles to epoxy resin polymer has improved the polymer's radiation shielding properties.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 13-14","pages":"5439 - 5446"},"PeriodicalIF":2.8,"publicationDate":"2024-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141781559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synthesis and Post-synthesis Modification of Zeolite Y for Improved Methanol Adsorption and Coke Formation Resistance 合成和合成后改性沸石 Y 以改善甲醇吸附性和抗焦炭形成性

IF 2.8 3区材料科学

Silicon Pub Date : 2024-07-24 DOI: 10.1007/s12633-024-03089-3

Boumediéne Bensafi, Nadjat Chouat, Abdelkarim Maziz, Fatiha Djafri

{"title":"Synthesis and Post-synthesis Modification of Zeolite Y for Improved Methanol Adsorption and Coke Formation Resistance","authors":"Boumediéne Bensafi, Nadjat Chouat, Abdelkarim Maziz, Fatiha Djafri","doi":"10.1007/s12633-024-03089-3","DOIUrl":"10.1007/s12633-024-03089-3","url":null,"abstract":"<div>Zeolite Faujasite Y was synthesized, ion-exchanged with NH4+, and calcined to provide the protonated H-Y form. Subsequent post-synthesis alterations included dealumination with oxalic acid for varied durations (1 and 2 h), resulting in samples labeled as H-Y/1h and H-Y/2h. Characterization techniques demonstrated the persistence of the zeolite Y structure despite minor crystallinity loss, particularly in H-Y/2h. Textural improvements were seen following protonation and dealumination. NH3-TPD analysis revealed that acid treatment resulted in considerable aluminum removal from the zeolite structure, increasing the concentration of strong acid sites in the treated samples. Methanol adsorption kinetics at 25 °C exhibited pseudo-second-order behavior due to its small kinetic diameter and low polarity, which facilitated diffusivity in micro- and hierarchical pores. At 35 °C, Na-Y, H-Y, and H-Y/1h samples exhibited second-order kinetics, indicating favorable methanol adsorption dynamics within zeolite pores. DTG study of methanol adsorption showed that hierarchical porosity creation efficiently suppressed coke formation, hence conserving catalytic activity, as seen in H-Y/2h at high temperatures. These findings highlight the crucial significance of post-synthesis treatments in increasing methanol adsorption and imparting coke resistance to zeolite-Y catalysts.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 15","pages":"5549 - 5561"},"PeriodicalIF":2.8,"publicationDate":"2024-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141781673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of the Thermodynamic Characteristics of Low-Temperature Hydrogenation of silicon Tetrachloride 四氯化硅低温氢化的热力学特性研究

IF 2.8 3区材料科学

Silicon Pub Date : 2024-07-23 DOI: 10.1007/s12633-024-03085-7

Zhe Ding, Li Guo, Chao Hua, Jinyi Chen, Ping Lu

{"title":"Investigation of the Thermodynamic Characteristics of Low-Temperature Hydrogenation of silicon Tetrachloride","authors":"Zhe Ding, Li Guo, Chao Hua, Jinyi Chen, Ping Lu","doi":"10.1007/s12633-024-03085-7","DOIUrl":"10.1007/s12633-024-03085-7","url":null,"abstract":"<div>The thermodynamic data for the low-temperature hydrogenation of silicon tetrachloride (STC) were calculated using density functional theory with W1 theory. Based on these calculations, the equilibrium concentration distribution was determined for different temperatures (373.15–1173.15 K), pressures (1–40 atm), and composition ratios of H2/STC (0.2–4) using the principle of chemical equilibrium. It was observed that the conversion rate and selectivity rate decreased with increasing temperature, while they increased with increasing pressure and composition ratio of H2/STC. The selectivity rate could only be significantly altered under extreme conditions. When the temperature and pressure were fixed, the yield reached its theoretical maximum when the composition ratio of H2/STC was between 0.5 and 1. Furthermore, sensitivity analysis results revealed that pressure and composition were the primary parameters influencing conversion, with temperature having only about one-tenth of their impact on the conversion rate. Ultimately, the experimental results were in good agreement with the calculated results, confirming the acceptability of the thermodynamic analysis.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 13-14","pages":"5417 - 5429"},"PeriodicalIF":2.8,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141781561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Different Ambient Atmospheres on the Damage Caused to Silicon by 1064-nm Laser Pulses 不同环境气氛对 1064 纳米激光脉冲对硅造成的损伤的影响

IF 2.8 3区材料科学

Silicon Pub Date : 2024-07-23 DOI: 10.1007/s12633-024-03093-7

Ming Guo, Yong-xiang Zhang, Wen-ying Zhang, Nan Li, Ji-xing Cai

{"title":"Effect of Different Ambient Atmospheres on the Damage Caused to Silicon by 1064-nm Laser Pulses","authors":"Ming Guo, Yong-xiang Zhang, Wen-ying Zhang, Nan Li, Ji-xing Cai","doi":"10.1007/s12633-024-03093-7","DOIUrl":"10.1007/s12633-024-03093-7","url":null,"abstract":"<div>A nanosecond-pulsed laser with a wavelength of 1064 nm was used to irradiate silicon, and the concentration of water mist and smoke was characterized through light transmission. The drift and scattering effects of the laser propagation atmosphere (water mist and smog environment) on the laser and the influence of different ambient atmospheres on the effect of the laser irradiation on silicon were studied. Research has shown that when a laser passes through a water mist environment, as the laser transmission ratio increases, the diameter of the exit spot increases, and the diameter of the damage induced to single-crystal silicon increases approximately linearly. The erosion damage is enhanced, and a mixture of heat and stress damage occurs. Smoke is a simulated haze environment, and the attenuation effect of the aerosol content on the laser in a smoke environment depends on the particle size and concentration. When the laser transmission ratio is the same, the diameter of the particles is small, and the corresponding particulate matter concentration is large. The smaller the particle size, the larger the particle concentration corresponding to a different laser transmission ratio. When the laser energy of the target is the same, the shape and size of the export laser change as the laser passes through fog; furthermore, the damage shape is no longer circular, but it is rather stretched and deformed along a specific direction. This study can provide a reference for laser processing, far-field laser applications, and atmospheric optics.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 13-14","pages":"5431 - 5438"},"PeriodicalIF":2.8,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141781562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Broad and Narrow Photon Transmission and Energy Absorption Parameters of SiO2-Al2O3-Na2O-NaF-YF3 Silicate Glasses SiO2-Al2O3-Na2O-NaF-YF3 硅酸盐玻璃的宽窄光子传输和能量吸收参数

IF 2.8 3区材料科学

Silicon Pub Date : 2024-07-22 DOI: 10.1007/s12633-024-03091-9

Jamila S. Alzahrani, Z. A. Alrowaili, I. O. Olarinoye, Chahkrit Sriwunkum, M. S. Al-Buriahi

{"title":"Broad and Narrow Photon Transmission and Energy Absorption Parameters of SiO2-Al2O3-Na2O-NaF-YF3 Silicate Glasses","authors":"Jamila S. Alzahrani, Z. A. Alrowaili, I. O. Olarinoye, Chahkrit Sriwunkum, M. S. Al-Buriahi","doi":"10.1007/s12633-024-03091-9","DOIUrl":"10.1007/s12633-024-03091-9","url":null,"abstract":"<div>This study highlights the influence of replacing Na2O with NaF on the photon interaction parameters of 40SiO2-20Al2O3-(10 + x)Na2O-(20-x)NaF-10YF3 (for x = 0, 2, 5, 7, 10). The mass attenuation coefficients (MACs) and mass energy absorption coefficients (MEACs) of the glass ceramics were computed for gamma-rays in the 15 keV-15MeV energy range using the NIST-XCOM database. The MAC and MAEC vary within the ranges of 0.0224–10.1508 cm2/g and 0.0156–6.4896 cm2/g for Si-ANNYF1, 0.0223–9.8821 cm2/g and 0.0164–6.3694 cm2/g for Si-ANNYF2, 0.0222–9.6097 cm2/g and 0.0163–6.2508 cm2/g for Si-ANNYF3, 0.0221–9.3724 cm2/g and 0.0163–5.5476 cm2/g for Si-ANNYF4, and 0.0220–9.1310 cm2/g and 0.0162–5.4131 cm2/g for Si-ANNYF5. The analysis of other estimated parameters showed that increasing the relative weight proportion of NaF2 relative to Na2O influenced the ability of the glass ceramics to interact and absorb energy from incident gamma photons. Adding more NaF made the glass ceramics better at confining photons in both the narrow and broad beams scenarios. The Si-ANNYFx glass ceramics are recommended for gamma shielding applications in nuclear industries.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 13-14","pages":"5405 - 5416"},"PeriodicalIF":2.8,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141743769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Adsorption of Favipiravir as Drug of Coronavirus Disease on Cu-Si52, Cu-C52, Cu-Al26N26, Cu-SiNT (6, 0), Cu-CNT (6, 0) and Cu-AlNT (6, 0) Cu-Si52、Cu-C52、Cu-Al26N26、Cu-SiNT (6，0)、Cu-CNT (6，0) 和 Cu-AlNT (6，0) 上对冠状病毒药物法维吡韦的吸附情况

IF 2.8 3区材料科学

Silicon Pub Date : 2024-07-19 DOI: 10.1007/s12633-024-03087-5

Farag M. A. Altalbawy, Roopashree R, Manmeet Singh, K. Phaninder Vinay, Raghda Ali Bakr, Muyassar Norberdiyeva, Hajir Al-Zirjawi, Hamza Fadhel Hamzah, Sarah Salah Jalal, Wael Dheaa Kadhim, Merwa Alhadrawi

{"title":"Adsorption of Favipiravir as Drug of Coronavirus Disease on Cu-Si52, Cu-C52, Cu-Al26N26, Cu-SiNT (6, 0), Cu-CNT (6, 0) and Cu-AlNT (6, 0)","authors":"Farag M. A. Altalbawy, Roopashree R, Manmeet Singh, K. Phaninder Vinay, Raghda Ali Bakr, Muyassar Norberdiyeva, Hajir Al-Zirjawi, Hamza Fadhel Hamzah, Sarah Salah Jalal, Wael Dheaa Kadhim, Merwa Alhadrawi","doi":"10.1007/s12633-024-03087-5","DOIUrl":"10.1007/s12633-024-03087-5","url":null,"abstract":"<div>This work wants to investigate the potential of Cu-Si52, Cu-C52, Cu-Al26N26, Cu-doped nanotubes (6, 0) to adsorb and deliver the Favipiravir as COVID-19 drug by DSD-PBEPBE-D3/aug-cc-pVDZ method. This work aims to propose the suitable materials for drug delivery of Favipiravir as COVID-19 drug. Results indicated that the Cu adoption can be increased the stability of Si52, C52, Al26N26, SiNT (6, 0), CNT (6, 0) and AlNNT (6, 0), significantly. The ΔGadsorption of complexes of Favipiravir with Cu-Si52, Cu-C52, Cu-Al26N26, Cu-doped nanotubes (6, 0) are -3.14, -3.25, -3.40, -3.89, -4.03 and -4.13 eV, respectively. The recovery time (τ) values of complexes of Favipiravir with Cu-Si52, Cu-C52, Cu-Al26N26, Cu-doped nanotubes (6, 0) in gas phase are 50.0, 51.8, 55.0, 56.3, 58.3 and 63.0 s. The Cu-AlNNT (6, 0) and Cu-Al26N26 have higher recovery time (τ) than Cu-Si52, Cu-C52, Cu-doped nanotubes (6, 0). Results shown that the Cu-Si52, Cu-C52, Cu-Al26N26, Cu-doped nanotubes (6, 0) have higher capacitates and abilities to deliver and transfer of the Favipiravir than other nanostructures in previous works. Finally, the Cu-AlNNT (6, 0) and Cu-CNT (6, 0) are proposed as acceptable structures to deliver and transfer of Favipiravir as drug of Coronavirus disease.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 13-14","pages":"5395 - 5404"},"PeriodicalIF":2.8,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141743770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Si48, SiNT(7, 0), B24N24 and BNNT(7, 0) as Acceptable Anode Materials in Mg-ion Batteries Si48、SiNT（7，0）、B24N24 和 BNNT（7，0）作为镁离子电池中可接受的阳极材料

IF 2.8 3区材料科学

Silicon Pub Date : 2024-07-17 DOI: 10.1007/s12633-024-03086-6

Tariq J. Al-Musawi, Farag M. A. Altalbawy, Iman Samir Alalaq, Raquel Virginia Colcha Ortiz, Rohit Sharma, Muyassar Norberdiyeva, Mamata Chahar, Usama S. Altimari, Sadeq K. Thajeel, Merwa Alhadrawi, Yuan Liu

{"title":"Si48, SiNT(7, 0), B24N24 and BNNT(7, 0) as Acceptable Anode Materials in Mg-ion Batteries","authors":"Tariq J. Al-Musawi, Farag M. A. Altalbawy, Iman Samir Alalaq, Raquel Virginia Colcha Ortiz, Rohit Sharma, Muyassar Norberdiyeva, Mamata Chahar, Usama S. Altimari, Sadeq K. Thajeel, Merwa Alhadrawi, Yuan Liu","doi":"10.1007/s12633-024-03086-6","DOIUrl":"10.1007/s12633-024-03086-6","url":null,"abstract":"<div>Here, the capacities of S-C48, S-C-nanotube, S-B24N24 and S-BN-nanotube in Mg-ion and Na-ion batteries are investigated. The Ecohesive of Si48, C48, S-C48, B24N24, S-B24N24, CNT(7, 0), S-CNT(7, 0), BNNT(7, 0) and S-BNNT(7, 0) are -5.86, -5.98, -6.24, -6.35, -6.47, -6.60, -6.88 and -7.01 eV in gas phase. The electrochemical parameters of Si48, C48, C-nanotube, B24N24, BN-nanotube, S-C48, S-C-nanotube, S-B24N24 and S-BN-nanotube in batteries are calculated. The Vcell and Ctheory of Si48, C48, CNT, B24N24, BNNT, S-C48, S-CNT, S-B24N24 and S-BNNT in Mg-ion batteries are higher than Na-ion batteries. Results demonstrated that the Vcell and Ctheory of C48, S-C48, B24N24, S-B24N24, CNT(7, 0), S-CNT(7, 0), BNNT(7, 0) and S-BNNT(7, 0) in batteries are higher than corresponding values of Si-nanotubes, C-nanocages and Si-nanocages, C-nanotubes, C-nanocages and BN-nanocages and BN-nanotubes. Results indicated that the S-C48, S-B24N24, S-CNT(7, 0) and S-BNNT(7, 0) have acceptable capacities in metal-ion batteries. Finally, the S-Si48, S-BNNT(7, 0) and S-CNT(7, 0) are proposed to utilize in batteries.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 13-14","pages":"5385 - 5392"},"PeriodicalIF":2.8,"publicationDate":"2024-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141721931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study of Thermodynamic, Optoelectronic and Thermoelectric Properties of BaSiO3 Crystals Doped With Er3+ and Yb3+ for Energy Renewable Devices Applications 用于可再生能源设备的掺杂 Er3+ 和 Yb3+ 的 BaSiO3 晶体的热力学、光电和热电特性研究

IF 2.8 3区材料科学

Silicon Pub Date : 2024-07-16 DOI: 10.1007/s12633-024-03084-8

Madiha Khalid, Sikander Azam, Muhammad Tahir Khan, Qaiser Rafiq, Adil Mehmood, Mohammad Altaf, Wilayat Khan

{"title":"Study of Thermodynamic, Optoelectronic and Thermoelectric Properties of BaSiO3 Crystals Doped With Er3+ and Yb3+ for Energy Renewable Devices Applications","authors":"Madiha Khalid, Sikander Azam, Muhammad Tahir Khan, Qaiser Rafiq, Adil Mehmood, Mohammad Altaf, Wilayat Khan","doi":"10.1007/s12633-024-03084-8","DOIUrl":"10.1007/s12633-024-03084-8","url":null,"abstract":"<div>The optoelectronic properties of doped BaSiO3-based semiconductors play a very significant role in modern optoelectronic devices. We provide key insights into their versatility and potential in developing technologies by analyzing their structural, electrical, elastic, optical and thermoelectric properties using Wien2k software and GGA + U method. The aim of this research is to enhance the usability of complex resources for new and practical applications. We begin our analysis by applying Birch-Murnaghan fitting to study the structural features of BaSiO3 crystals doped with Er3+ and Yb3+. This study explores the structural, electronic, and thermoelectric enhancements of BaSiO₃ semiconductors doped with Er3⁺ and Yb3⁺. Through detailed analysis, we have identified critical modifications in the lattice parameters and crystal structures, confirming an improvement in general stability and functionality. Notably, doping has effectively reduced the energy band gap from 1.12 eV in undoped BaSiO₃ to a metallic state, optimizing the material for optoelectronic applications. The introduction of Er3⁺ significantly increases optical absorption and reduces the optical band gap, while Yb3⁺ extends absorption into the near-infrared spectrum. Both dopants particularly enhance the thermoelectric properties of BaSiO₃, with a marked increase in the power factor. Additionally, these doped materials show substantial absorption of ultraviolet photons and moderate reflection across infrared and visible spectra. The findings from this research position Er3⁺ and Yb3⁺ doped BaSiO₃ as promising materials for advanced thermoelectric and optoelectronic applications, suggesting potential for significant technological advancements in energy-efficient devices.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 13-14","pages":"5367 - 5383"},"PeriodicalIF":2.8,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141640611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

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