IF 3.3 3区材料科学

Silicon Pub Date : 2025-05-07 DOI: 10.1007/s12633-025-03331-6

Pooja Singh, Avshish Kumar, Pramod Kumar, V. K. Jain

{"title":"Silicon Nanowires Based High Performance Ultraviolet Photodetector Developed using AuNPs/SnO2 Nanostructure","authors":"Pooja Singh, Avshish Kumar, Pramod Kumar, V. K. Jain","doi":"10.1007/s12633-025-03331-6","DOIUrl":"10.1007/s12633-025-03331-6","url":null,"abstract":"<div><p>In this work, ultraviolet (UV) photodetector was developed using silicon nanowire (SiNWs) based heterojunction to obtain a high-performance device. Here, a heterojunction was prepared using gold nanoparticles (AuNPs), tin oxide (SnO<sub>2</sub>) nanoparticles on silicon nanowires (SiNWs) on Si chip. The synthesis of SnO<sub>2</sub> NPs and AuNPs was done using the co-precipitation and Turkevich methods, respectively. The SiNWs were developed by using metal assisted chemical etching (MACE) technique. The prepared materials and their heterojunction structures were characterized using various techniques. The photocurrent response of AuNPs/SnO<sub>2</sub>NPs@SiNWs heterojunction structure was measured to be 60μA under self-powered mode. The photodetector showed a high responsivity of 45 mA/W and good detectivity of 0.25 × 10<sup>12</sup> Jones at room temperature. The photodetector also possesses a fast rise/decay time of ~ 60 ms and ~ 110 ms, respectively. The sample was checked continually for three ON/OFF sets of illumination at a regular interval. The high performance of the photodetector can be attributed due to the synergetic effect of plasmonic AuNPs with SnO<sub>2</sub> NPs which shows an enhanced light trapping interactions, leading to maximum absorption of UV radiation. Thus, the results presented in this work hold great promise for the advancement of highly effective miniature UV photodetectors with unique features.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 9","pages":"2105 - 2120"},"PeriodicalIF":3.3,"publicationDate":"2025-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145142814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantification of the Impact of Hexagonal Percentage on the Elastic and Acoustic Properties of SiC polytypes (3C, 10H, 8H, 6H and 4H) 六方含量对SiC多型（3C、10H、8H、6H和4H）弹性和声学性能影响的量化

IF 3.3 3区材料科学

Silicon Pub Date : 2025-05-05 DOI: 10.1007/s12633-025-03326-3

Souheyr Guernoub, Ibtissem Touati, Assia Khoualdia, Houssem-eddine Doghmane, Abdellaziz Doghmane

{"title":"Quantification of the Impact of Hexagonal Percentage on the Elastic and Acoustic Properties of SiC polytypes (3C, 10H, 8H, 6H and 4H)","authors":"Souheyr Guernoub, Ibtissem Touati, Assia Khoualdia, Houssem-eddine Doghmane, Abdellaziz Doghmane","doi":"10.1007/s12633-025-03326-3","DOIUrl":"10.1007/s12633-025-03326-3","url":null,"abstract":"<div><p>Silicon carbide, SiC, polytypes exhibit properties that can vary and can be influenced by factors such as hexagonality percentage, h. The objective of this work is to determine the impact of hexagonality percentage on several elastic and acoustic properties of SiC polytypes (3C, 10H, 8H, 6H, and 4H-SiC). We have successfully formulated relations linking the elastic moduli to the energy gaps (Eg) of the SiC polytypes after an in-depth study of the elastic moduli (Young's modulus E, bulk modulus B, and shear modulus G) in relation to the energy gap Eg. Then, the influence of hexagonality percentage on the elastic properties of SiC polytypes and their acoustic velocities (longitudinal, transverse, and Rayleigh) as well as their critical angles <span>(left({uptheta }_{text{L}}, {uptheta }_{text{T}}text{ et }{uptheta }_{text{R}}right))</span> was analyzed and discussed to obtain semi-empirical formulas in the form: <span>(Fleft(hright)=pm alpha h+beta)</span>, which implies the existence of a near-linear relation between the elastic and acostic properties of the SiC polytypes with hexagonality percentage h. We have obtained results that theoretically support the development of SiC polytypes.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 9","pages":"2015 - 2026"},"PeriodicalIF":3.3,"publicationDate":"2025-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145162073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design and Investigation of Gamma Ray Dosimetry with Doped Polymer-Infused Porous Silicon Annular Photonic Crystal 掺杂聚合物注入多孔硅环形光子晶体伽马射线剂量测定的设计与研究

IF 3.3 3区材料科学

Silicon Pub Date : 2025-05-03 DOI: 10.1007/s12633-025-03319-2

Ayman A. Ameen, Abinash Panda, Ahmed M. El-Sherbeeny, Ali Hajjiah, Mostafa R. Abukhadra, Wail Al Zoubi, Ahmed Mehaney, Hussein A. Elsayed

{"title":"Design and Investigation of Gamma Ray Dosimetry with Doped Polymer-Infused Porous Silicon Annular Photonic Crystal","authors":"Ayman A. Ameen, Abinash Panda, Ahmed M. El-Sherbeeny, Ali Hajjiah, Mostafa R. Abukhadra, Wail Al Zoubi, Ahmed Mehaney, Hussein A. Elsayed","doi":"10.1007/s12633-025-03319-2","DOIUrl":"10.1007/s12633-025-03319-2","url":null,"abstract":"<div><p>This research explores a modified photonic crystal structure called the annular photonic crystal (APC) for enhanced gamma ray detection, specifically in the range of 0 Gy to 70 Gy. The APC design is primarily based on porous silicon and a polyvinyl alcohol (PVA) polymer that is doped with crystal violet (CV) and carbol fuchsine (CF). The selection of these materials is motivated by their significant changes in refractive index when exposed to gamma ray doses. Detection relies on the appearance of a resonant peak in the reflectance spectrum of the structure, which arises from a defect layer created by the PVA polymer doped with CV and CF dyes at the center of the structure. To analyze the variations in the defect mode characteristics within the reflectance spectrum at different gamma ray doses, a modified transfer matrix method is utilized. Various geometric parameters of the structure are meticulously optimized to achieve optimal sensing performance. This hybrid structure enhances the interaction efficiency between the incoming radiation and the photonic crystal matrix, resulting in a notable sensitivity of 227.19 nm/RIU. Additionally, the proposed sensor is easy to fabricate and can be readily integrated with other photonic devices, making it an ideal candidate for dosimetry applications in medical treatments, radiation protection, and industrial processes.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 9","pages":"2071 - 2087"},"PeriodicalIF":3.3,"publicationDate":"2025-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145142399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tuning and Ameliorating the Microstructure and Electronic Features of SiC/PtSi Promising Nanostructures Doped Optical Material for Multifunctional Optoelectronics Applications 调谐和改进SiC/PtSi纳米结构掺杂光学材料的微观结构和电子特性，用于多功能光电子应用

IF 3.3 3区材料科学

Silicon Pub Date : 2025-05-02 DOI: 10.1007/s12633-025-03328-1

Ali S. Hasan, Ahmed Hashim, Ahmed Ehsan Jassem, Mohammed H. Al-maamori, Yasir A. Alkawaz, Zahraa S. Alameer

{"title":"Tuning and Ameliorating the Microstructure and Electronic Features of SiC/PtSi Promising Nanostructures Doped Optical Material for Multifunctional Optoelectronics Applications","authors":"Ali S. Hasan, Ahmed Hashim, Ahmed Ehsan Jassem, Mohammed H. Al-maamori, Yasir A. Alkawaz, Zahraa S. Alameer","doi":"10.1007/s12633-025-03328-1","DOIUrl":"10.1007/s12633-025-03328-1","url":null,"abstract":"<div><p>This study focuses on designing and evaluating new nanostructures that combine polystyrene (PS), silicon carbide (SiC) and platinum silicide (PtSi). These nanostructures possess qualities that make them suitable, for applications in optoelectronics. The research explores the optimization, structural characteristics and electronic properties of PS/SiC/PtSi nanostructures. The findings reveal improvements in both the structure and electronic features of polystyrene when incorporating SiC/PtSi nanostructures. This demonstrates the potential of PS/SiC/PtSi nanostructures for electronics and photonics applications. Additionally the presence of PtSi/SiC leads to reduce in the energy gap of PS from 5.004 eV to 2.979 eV highlighting the relevance of these nanostructures for electronic devices. The electronic parameters of PS also exhibit enhancements when doped with SiC/PtSi nanostructures. Overall these results affirm the importance and promise of PS/SiC/PtSi nanostructures, in the field of nanoelectronics and photonics.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 9","pages":"2059 - 2069"},"PeriodicalIF":3.3,"publicationDate":"2025-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145142034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nitrogen Induced Structural Evolution and the Resultant Optical Behavior of PECVD Derived Silicon Carbide Thin Films 氮诱导的PECVD衍生碳化硅薄膜结构演化及其光学行为

IF 3.3 3区材料科学

Silicon Pub Date : 2025-04-30 DOI: 10.1007/s12633-025-03320-9

V. S. Kavitha, A. Bute, D. Bhale, V. Sekar, S. K. Ghosh, N. G. Unni, A. K. Visnuprasad, J. N. Sharma, R. L. Bhardwaj, M. Mascarenhas

{"title":"Nitrogen Induced Structural Evolution and the Resultant Optical Behavior of PECVD Derived Silicon Carbide Thin Films","authors":"V. S. Kavitha, A. Bute, D. Bhale, V. Sekar, S. K. Ghosh, N. G. Unni, A. K. Visnuprasad, J. N. Sharma, R. L. Bhardwaj, M. Mascarenhas","doi":"10.1007/s12633-025-03320-9","DOIUrl":"10.1007/s12633-025-03320-9","url":null,"abstract":"<div><p>Nitrogen-doped Silicon Carbide (SiC) thin films were deposited on p-Si (100) and glass substrates using Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF-PECVD) technique. The structural, compositional, and linear and non-linear optical properties of the films were probed as a function of nitrogen content using various characterization techniques; like Grazing Incidence X-ray Diffraction (GIXRD), X-ray Photoelectron Spectroscopy (XPS), UV–Visible Spectroscopy, and Photoluminescence Spectroscopy. Increase in the N<sub>2</sub> flow rate from <span>(0% ;to; 41.2%)</span> during deposition resulted in decrease in intensity of the α-SiC peak (<span>(1020))</span> in the XRD spectra, due to formation of the Si–N bonds, indicating reduction in crystallinity. XPS confirms formation of SiC hexagonal phase in the film surface, and Nitrogen doping was found to cause oxidation due to generation of defect sites. Band-gap widening is observed with increasing N<sub>2</sub> concentration up to 5 sccm (2.43–2.67 eV), beyond that the value decreases. Intense visible emission was observed in N-doped films, along with the UV emission, which is observed for undoped film as well. The CIE-1931 chromaticity plot exhibits color perception close to pure white in the N-doped SiC films, the blue color perception is observed in the undoped SiC film. The value of Correlated Colour Temperature for the samples in the white light region is in between <span>(2500)</span> K and <span>(6500)</span> K which shows the high quality of the generated white light.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 9","pages":"2041 - 2057"},"PeriodicalIF":3.3,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s12633-025-03320-9.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145145625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

NEGF-Based Analysis of TMDC-Silicon Heterojunction Nanowire Gas Sensors for Oxygen and Hydrogen Detection 基于negf的tmdc -硅异质结纳米线氧氢气体传感器分析

IF 3.3 3区材料科学

Silicon Pub Date : 2025-04-29 DOI: 10.1007/s12633-025-03327-2

Ashish Raman, Prateek Kumar, Ravi Ranjan, Naveen Kumar

引用次数: 0

A Physics Based 3D Analytical Model for Si-SiGe-Si Stacked Channel Tri-gate Junctionless FinFET 基于物理的si - si - si堆叠通道三栅极无结FinFET三维解析模型

IF 3.3 3区材料科学

Silicon Pub Date : 2025-04-29 DOI: 10.1007/s12633-025-03324-5

Devender pal Singh, Menka Yadav

引用次数: 0

Porous Silicon-Based UV Photodetectors: Enhancing Performance with Ta-Doped ZnO 多孔硅基紫外光电探测器：掺ta ZnO增强其性能

IF 3.3 3区材料科学

Silicon Pub Date : 2025-04-28 DOI: 10.1007/s12633-025-03325-4

Safiye Karaçam, Meltem Gör Bölen

引用次数: 0

Effect of Etching Duration on the Properties of Porous Silicon and the Characteristics of Photodetectors Based on It 蚀刻时间对多孔硅性能的影响及基于多孔硅的光电探测器的特性

IF 3.3 3区材料科学

Silicon Pub Date : 2025-04-25 DOI: 10.1007/s12633-025-03323-6

Ruwaida T. Shbeeb, Falah A.-H. Mutlak

{"title":"Effect of Etching Duration on the Properties of Porous Silicon and the Characteristics of Photodetectors Based on It","authors":"Ruwaida T. Shbeeb, Falah A.-H. Mutlak","doi":"10.1007/s12633-025-03323-6","DOIUrl":"10.1007/s12633-025-03323-6","url":null,"abstract":"<div><p>Research has been done on porous silicon to determine its morphological features that significantly impact its spectroscopic and electrical properties. Silicon wafers were n-type of a (100) orientation and have been used to create porous silicon with different etching periods for 5—25 min using the photo-electrochemical etching method in HF solutions. Field emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) have been used to study the morphological and structural properties of porous silicon, respectively. Spectroscopic characteristics were investigated by Raman spectroscopy, as well as room-temperature photoluminescence. The (J<sub>ph</sub>-V) characteristics in darkness and illuminated conditions demonstrated excellent stability and responsivity. The maximum responsivity value reached approximately 0.65 A.W<sup>−1</sup> at 800 nm wavelength for the PS/n-Si device fabricated at an etching time of 25 min. The quantum confinement effect in porous silicon is supported by noticing a peak shift toward the higher energy side of the PL spectrum. The Raman spectra showed a symmetrical band structure with the phonon frequency shifting under 520.7 cm<sup>−1</sup> between 503–509 cm <sup>−1</sup>. The results indicate that PS/n-Si heterojunction photodetectors are appropriate for advanced visible light detection, providing cost-effective and convenient photodiodes for portable devices without additional expensive equipment.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 8","pages":"1955 - 1967"},"PeriodicalIF":3.3,"publicationDate":"2025-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145144823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

FINFET Based IL 7 T SRAM Cell: Reliable, Silicon Area- and Power Efficient for Use in Portable Medical Equipment 基于FINFET的il7t SRAM单元：用于便携式医疗设备的可靠，硅面积和功率效率

IF 3.3 3区材料科学

Silicon Pub Date : 2025-04-25 DOI: 10.1007/s12633-025-03321-8

Lal John Basha Shaik, Atul Shankar Mani Tripathi

{"title":"FINFET Based IL 7 T SRAM Cell: Reliable, Silicon Area- and Power Efficient for Use in Portable Medical Equipment","authors":"Lal John Basha Shaik, Atul Shankar Mani Tripathi","doi":"10.1007/s12633-025-03321-8","DOIUrl":"10.1007/s12633-025-03321-8","url":null,"abstract":"<div><p>Portable biomedical devices aim to serve in human life at a reasonable cost. The portable devices having significant impact due to compact size and durable battery operation. The pixel information is storing in embedded memory for biomedical image processing equipment, where the pixel values hold vital information about the image. Static random-access memory (SRAM) is used in the majority of embedded memories for storing this vital information. To holds vital data, SRAM needs to be extremely reliable, stable and low in power consumption. The proposed research presents a revolutionary low-energy, silicon area efficient, robust FinFET based Intramural loop 7 T (IL 7 T) SRAM bit cell that achieves a large read static margin while operating in weak inversion region (lowering the supply voltage to lower power dissipation). It provides numerous of benefits in terms of area, power, latency over few current existing designs. In contrast to the traditional MOSFET based TG8T, 9 Transistors SRAM architectures, the proposed cell offers decrease in latency (Read delay / Access Time-τ<sub>ra</sub>) of 42.8%, 57.4%, a significant rise in ‘static voltage noise margin’ (SVNM) of 42.1% and 81.1%, and a limiting leakage power dissipation of 84.5% and 33.19%. Including the lower energy consumption and high reliability, the proposed work occupies in small silicon area. The 7 transistors are used in one memory cell, it requires 1.02X less area overhead than a conventional MOSFET based 6 T memory cell. This cell has the greatest performance metrics out of all the SRAM cells under consideration for compression. The used design functioned under weak inversion region and obtained the optimum performance metrics in memory design at a 300 mV supply voltage for biomedical applications.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 8","pages":"1969 - 1991"},"PeriodicalIF":3.3,"publicationDate":"2025-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145144621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

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