Influence of Inner Crucible Radius Variation on the Thermal Field and Oxygen Transport in the Melt During the Growth of Silicon by Continuous Czochralski Method

The continuous Czochralski (CCz) method is a low-cost and high-efficiency method for the production of monocrystalline silicon. The inner crucible is an extremely important component in the CCz method. In this work, the crystal silicon rod production process with a diameter of 215.00 mm is simulated to study how the inner crucible radius influences the thermal field of the melt and the melt-crystal (m-c) interface shape with the outer crucible size remaining constant. Additionally, the effects of varying the inner crucible radius on the Von Mises stress within the crystal and the distribution of oxygen impurities in the melt are also examined. The results show that when the radius of the outer crucible is fixed, the required heater power increases slightly with the increase of the inner crucible radius. However, the convexity and deflection of the m-c interface, the Von Mises stress inside the crystal, and the oxygen impurities content at the crystal growth interface decrease with the increase of the inner crucible radius. Therefore, the larger inner crucible size is favorable for silicon crystal production using CCz. The results of this work can improve the production efficiency and quality of the silicon crystal.